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Renesas Electronics Power Field Effect Transistors (FET) 114

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NP70N10KUF-E2-AY by Renesas Electronics

NP70N10KUF-E2-AY

Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 120 W; No. of Elements: 1; Peak Reflow Temperature (C): NOT SPECIFIED;

SINGLE

70 A

70 A

METAL-OXIDE SEMICONDUCTOR

1

175 Cel

NOT SPECIFIED

N-CHANNEL

120 W

FET General Purpose Power

YES

NOT SPECIFIED

NP82N03PUG-E1-AY by Renesas Electronics

NP82N03PUG-E1-AY

Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 143 W; Maximum Operating Temperature: 175 Cel; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

SINGLE

82 A

82 A

METAL-OXIDE SEMICONDUCTOR

1

175 Cel

NOT SPECIFIED

N-CHANNEL

143 W

FET General Purpose Power

YES

NOT SPECIFIED

NP82N055PUG-E1-AY by Renesas Electronics

NP82N055PUG-E1-AY

Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 143 W; Maximum Drain Current (ID): 82 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

SINGLE

82 A

82 A

METAL-OXIDE SEMICONDUCTOR

1

175 Cel

NOT SPECIFIED

N-CHANNEL

143 W

FET General Purpose Power

YES

NOT SPECIFIED

NP88N03KDG-E1-AY by Renesas Electronics

NP88N03KDG-E1-AY

Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 200 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Drain Current (Abs) (ID): 88 A;

SINGLE

88 A

88 A

METAL-OXIDE SEMICONDUCTOR

1

175 Cel

NOT SPECIFIED

N-CHANNEL

200 W

FET General Purpose Power

YES

NOT SPECIFIED

NP88N04KUG-E1-AY by Renesas Electronics

NP88N04KUG-E1-AY

Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 200 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Peak Reflow Temperature (C): NOT SPECIFIED;

SINGLE

88 A

88 A

METAL-OXIDE SEMICONDUCTOR

1

175 Cel

NOT SPECIFIED

N-CHANNEL

200 W

FET General Purpose Power

YES

NOT SPECIFIED

NP88N055KUG-E1-AY by Renesas Electronics

NP88N055KUG-E1-AY

Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 200 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

SINGLE

88 A

88 A

METAL-OXIDE SEMICONDUCTOR

1

175 Cel

NOT SPECIFIED

N-CHANNEL

200 W

FET General Purpose Power

YES

NOT SPECIFIED

NP88N055KUG-E2-AY by Renesas Electronics

NP88N055KUG-E2-AY

Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 200 W; Maximum Drain Current (ID): 88 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

SINGLE

88 A

88 A

METAL-OXIDE SEMICONDUCTOR

1

175 Cel

NOT SPECIFIED

N-CHANNEL

200 W

FET General Purpose Power

YES

NOT SPECIFIED

UPA1727G-E1-A by Renesas Electronics

UPA1727G-E1-A

Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; No. of Elements: 1; Terminal Finish: TIN BISMUTH;

SINGLE

10 A

10 A

METAL-OXIDE SEMICONDUCTOR

e6

1

150 Cel

N-CHANNEL

2 W

FET General Purpose Power

YES

TIN BISMUTH

UPA1763G-E1-AT by Renesas Electronics

UPA1763G-E1-AT

Renesas Electronics

N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Drain Current (ID): 4.5 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): 4.5 A;

4.5 A

4.5 A

METAL-OXIDE SEMICONDUCTOR

e3

150 Cel

260

N-CHANNEL

2 W

FET General Purpose Power

YES

MATTE TIN

UPA1763G-E1-A by Renesas Electronics

UPA1763G-E1-A

Renesas Electronics

N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Drain Current (ID): 4.5 A; Maximum Operating Temperature: 150 Cel; Terminal Finish: TIN BISMUTH;

4.5 A

4.5 A

METAL-OXIDE SEMICONDUCTOR

e6

150 Cel

N-CHANNEL

2 W

FET General Purpose Power

YES

TIN BISMUTH

UPA1763G-E2-A by Renesas Electronics

UPA1763G-E2-A

Renesas Electronics

N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; JESD-609 Code: e6; Maximum Drain Current (ID): 4.5 A; Maximum Drain Current (Abs) (ID): 4.5 A;

4.5 A

4.5 A

METAL-OXIDE SEMICONDUCTOR

e6

150 Cel

N-CHANNEL

2 W

FET General Purpose Power

YES

TIN BISMUTH

UPA1764G-E1-A by Renesas Electronics

UPA1764G-E1-A

Renesas Electronics

N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Drain Current (Abs) (ID): 7 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 150 Cel;

7 A

7 A

METAL-OXIDE SEMICONDUCTOR

e6

150 Cel

N-CHANNEL

2 W

FET General Purpose Power

YES

TIN BISMUTH

UPA1764G-E2-AZ by Renesas Electronics

UPA1764G-E2-AZ

Renesas Electronics

N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Drain Current (ID): 7 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

7 A

7 A

METAL-OXIDE SEMICONDUCTOR

150 Cel

NOT SPECIFIED

N-CHANNEL

2 W

FET General Purpose Power

YES

NOT SPECIFIED

UPA1803GR-9JG-E1-A by Renesas Electronics

UPA1803GR-9JG-E1-A

Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Operating Temperature: 150 Cel; Terminal Finish: TIN BISMUTH;

SINGLE

8 A

8 A

METAL-OXIDE SEMICONDUCTOR

e6

1

150 Cel

N-CHANNEL

2 W

FET General Purpose Power

YES

TIN BISMUTH

UPA1890GR-9JG-E1-A by Renesas Electronics

UPA1890GR-9JG-E1-A

Renesas Electronics

N-CHANNEL AND P-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Drain Current (ID): 6 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 150 Cel;

6 A

6 A

METAL-OXIDE SEMICONDUCTOR

e6

150 Cel

N-CHANNEL AND P-CHANNEL

2 W

Other Transistors

YES

TIN BISMUTH

HAF1002-90STL-E by Renesas Electronics

HAF1002-90STL-E

Renesas Electronics

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PSSO-G2; Maximum Drain-Source On Resistance: .13 ohm; Minimum DS Breakdown Voltage: 60 V;

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

15 A

.13 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

1

2

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

P-CHANNEL

30 A

YES

GULL WING

SINGLE

SWITCHING

SILICON

UPA2738GR-E2-AX by Renesas Electronics

UPA2738GR-E2-AX

Renesas Electronics

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.1 W; Maximum Feedback Capacitance (Crss): 650 pF; Transistor Element Material: SILICON;

10 mJ

SINGLE WITH BUILT-IN DIODE

30 V

10 A

.029 ohm

METAL-OXIDE SEMICONDUCTOR

650 pF

R-PDSO-G8

e4

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

P-CHANNEL

1.1 W

100 A

YES

NICKEL PALLADIUM GOLD

GULL WING

DUAL

SWITCHING

SILICON

NP180N04TUK-E1-AY by Renesas Electronics

NP180N04TUK-E1-AY

Renesas Electronics

NP180N04TUK-E1-AY by Renesas Electronics is a N-CHANNEL FET with 180A ID and 348W power dissipation. Ideal for high-power applications, it operates at up to 175°C. Suitable for surface mount configurations, this MOSFET offers robust performance in demanding environments.

SINGLE

180 A

180 A

METAL-OXIDE SEMICONDUCTOR

1

175 Cel

NOT SPECIFIED

N-CHANNEL

348 W

FET General Purpose Power

YES

NOT SPECIFIED