Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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UPA2630T1R-E2-AX
Renesas Electronics
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Terminal Finish: NICKEL PALLADIUM GOLD;
SINGLE
7 A
METAL-OXIDE SEMICONDUCTOR
e4
1
150 Cel
260
P-CHANNEL
2.5 W
Other Transistors
YES
NICKEL PALLADIUM GOLD
UPA2631T1R-E2-AX
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Peak Reflow Temperature (C): 260;
6 A
2SK3510-Z-E1-AZ
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Drain Current (Abs) (ID): 83 A;
83 A
NOT SPECIFIED
N-CHANNEL
125 W
FET General Purpose Power
UPA2600T1R-E2-AX
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.4 W; Terminal Finish: NICKEL PALLADIUM GOLD; Maximum Drain-Source On Resistance: .0191 ohm;
20 V
.0191 ohm
2.4 W
FET General Purpose Powers
UPA2660T1R-E2-AX
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.3 W; Maximum Operating Temperature: 150 Cel; Terminal Finish: NICKEL PALLADIUM GOLD; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
4 A
.062 ohm
2.3 W
UPA2690T1R-E2-AX
N-CHANNEL AND P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.3 W; Maximum Drain Current (ID): 4 A; JESD-609 Code: e4;
N-CHANNEL AND P-CHANNEL
UPA2739T1A-E2-AY
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 83 W; Avalanche Energy Rating (EAS): 160 mJ; Package Style (Meter): SMALL OUTLINE;
160 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
30 V
85 A
.0028 ohm
R-PDSO-N8
e3
8
ENHANCEMENT MODE
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
83 W
180 A
MATTE TIN
NO LEAD
DUAL
SWITCHING
SILICON
UPA2764T1A-E2-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 83 W; Maximum Drain Current (ID): 130 A; No. of Elements: 1;
130 A
UPA2765T1A-E2-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 83 W; Maximum Drain Current (ID): 100 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
100 A
UPA2766T1A-E2-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 83 W; Maximum Drain Current (ID): 130 A; JESD-609 Code: e3;
.00088 ohm
2SK1636STR-E
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 75 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): 15 A;
15 A
75 W
2SK3575-AZ
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 105 W; No. of Elements: 1; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
105 W
NO
10
NP36N055HLE-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 120 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
36 A
175 Cel
120 W
2SJ199-T2-AZ
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; No. of Elements: 1; Maximum Drain Current (ID): 1 A;
1 A
2 W
2SK3058-Z-E1-AZ
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 58 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
55 A
58 W
UPA1809GR-9JG-E1-A
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Terminal Finish: TIN BISMUTH; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
8 A
e6
TIN BISMUTH
UPA1857GR-9JG-E1-A
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.7 W; Maximum Drain Current (ID): 3.8 A; Maximum Drain Current (Abs) (ID): 3.8 A; Terminal Finish: TIN BISMUTH;
3.8 A
1.7 W
UPA1873GR-9JG-E1-A
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Terminal Finish: TIN BISMUTH; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (Abs) (ID): 6 A;
UPA1930TE-T1-AT
P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
4.5 A
UPA2752GR-E1-AT
N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Terminal Finish: MATTE TIN; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 8 A;
UPA2754GR(0)-E1-AY
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; No. of Elements: 2; Transistor Application: SWITCHING;
12.1 mJ
SEPARATE, 2 ELEMENTS
11 A
.0186 ohm
R-PDSO-G8
2
88 A
GULL WING
UPA2794GR(0)-E1-AZ
N-CHANNEL AND P-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Drain Current (ID): 5.5 A; Maximum Operating Temperature: 150 Cel; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
5.5 A
2SJ649-AZ
The Renesas Electronics 2SJ649-AZ is a P-CHANNEL FET with max drain current of 20A and power dissipation of 25W. Ideal for applications requiring high power handling in a single configuration, such as power supplies or motor control systems. Operating up to 150°C, it offers reliability and performance under demanding conditions.
20 A
25 W
2SK3353(0)-Z-E1-AZ
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 95 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
82 A
95 W
2SK3353-Z-E1-AZ
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 95 W; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Operating Temperature: 150 Cel;
2SK3430-Z-E1-AZ
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 84 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
80 A
84 W
2SK3433(0)-Z-E1-AZ
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 47 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (Abs) (ID): 40 A;
40 A
47 W
2SK3435-Z-E1-AZ
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 84 W; No. of Elements: 1; Maximum Drain Current (Abs) (ID): 80 A;
2SK3479-Z-E1-AZ
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
2SK3481(0)-Z-E1-AZ
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 56 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 150 Cel;
30 A
56 W
NP22N055SLE-E2-AY
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 45 W; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Drain Current (Abs) (ID): 22 A;
25 mJ
55 V
22 A
.051 ohm
TO-252
R-PSSO-G2
45 W
NP88N075KUE-E1-AZ
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 288 W; No. of Elements: 1; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
288 W
2SK4151TZ-E
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Qualification: Not Qualified; Transistor Element Material: SILICON; Transistor Application: SWITCHING;
150 V
.0025 ohm
TO-92
O-PBCY-T3
3
ROUND
CYLINDRICAL
Not Qualified
THROUGH-HOLE
BOTTOM
2SJ673-AZ
P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 32 W; Maximum Operating Temperature: 150 Cel; No. of Elements: 1;
32 W
2SK3755-AZ
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 24 W; Peak Reflow Temperature (C): 260; Maximum Drain Current (Abs) (ID): 45 A;
45 A
24 W
2SK3793-AZ
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 20 W; No. of Elements: 1; Maximum Time At Peak Reflow Temperature (s): 10;
12 A
20 W
2SK3811-ZP-E1-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 213 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 110 A;
110 A
213 W
2SK3901(0)-ZK-E1-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 64 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; No. of Elements: 1;
60 A
64 W
2SK3902(0)-ZK-E1-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 45 W; Peak Reflow Temperature (C): NOT SPECIFIED; No. of Elements: 1;
NP110N03PUG-E1-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 288 W; No. of Elements: 1; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
NP110N04PUG-E1-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 288 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Operating Temperature: 175 Cel;
NP52N055SUG-E1-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 56 W; No. of Elements: 1; Maximum Drain Current (Abs) (ID): 52 A;
52 A
NP55N055SDG-E1-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 77 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Peak Reflow Temperature (C): NOT SPECIFIED;
77 W
NP55N055SDG-E2-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 77 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 55 A;
NP55N055SUG-E1-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 77 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Drain Current (Abs) (ID): 55 A;
NP60N03KUG-E1-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 88 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Drain Current (ID): 60 A;
88 W
NP60N04KUG-E1-AY
NP60N04KUG-E1-AY by Renesas Electronics is a N-CHANNEL FET with 60A max drain current and 88W power dissipation. Ideal for high-power applications, it operates at up to 175°C. Suitable for surface mount configurations, this MOSFET is designed for robust performance in demanding environments.
NP70N10KUF-E1-AY
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 120 W; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Maximum Drain Current (Abs) (ID): 70 A;
70 A
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