Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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IRF6727MTR1PBF
International Rectifier
IRF6727MTR1PBF by International Rectifier is a N-CHANNEL FET with 180A ID, 89W Pd, and 150°C max temp. Ideal for power applications requiring high drain current in enhancement mode operation.
SINGLE
180 A
METAL-OXIDE SEMICONDUCTOR
1
ENHANCEMENT MODE
150 Cel
N-CHANNEL
89 W
FET General Purpose Power
YES
IRF7807VD2TRPBF
IRF7807VD2TRPBF by International Rectifier is a single N-channel power FET with a max drain current of 8.3A and max power dissipation of 2.5W. It is suitable for applications requiring enhancement mode operation, such as power management systems or motor control circuits.
8.3 A
e3
260
2.5 W
MATTE TIN
30
IRFH7921TR2PBF
IRFH7921TR2PBF by International Rectifier is a N-CHANNEL Power FET with 30V DS Breakdown Voltage and 120A IDM. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 3.1W. This surface mount transistor has a package style of SMALL OUTLINE and can handle temperatures from -55 to 150°C.
29 mJ
DRAIN
SINGLE WITH BUILT-IN DIODE
30 V
34 A
15 A
.0085 ohm
120 pF
R-PDSO-F5
5
-55 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
3.1 W
120 A
FLAT
DUAL
SWITCHING
SILICON
IRF7350TRPBF
IRF7350TRPBF by International Rectifier is a power FET with N-Channel and P-Channel polarity. It has a min DS breakdown voltage of 100V and can handle a max pulsed drain current of 8.4A. This transistor is commonly used for switching applications.
HIGH RELIABILITY
35 mJ
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
100 V
2.1 A
.21 ohm
MS-012AA
R-PDSO-G8
2
8
N-CHANNEL AND P-CHANNEL
2 W
8.4 A
Other Transistors
Matte Tin (Sn)
GULL WING
IRFR9120NTRR
IRFR9120NTRR by International Rectifier is a P-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 26A and 0.48 ohm RDS(ON), operating in ENHANCEMENT MODE. This MOSFET is designed for high-performance power management systems requiring efficient switching capabilities.
AVALANCHE RATED, HIGH RELIABILITY, ULTRA LOW RESISTANCE
100 mJ
6.6 A
.48 ohm
TO-252AA
R-PSSO-G2
e0
P-CHANNEL
26 A
Not Qualified
TIN LEAD
IRL530NL
IRL530NL by International Rectifier is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 60A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.12 ohm RDS(on), and 175°C max operating temp.
150 mJ
17 A
.12 ohm
TO-262AA
R-PSIP-T3
3
175 Cel
IN-LINE
79 W
60 A
NO
THROUGH-HOLE
IRF7413ATR
IRF7413ATR by International Rectifier is a N-CHANNEL Power FET with 30V DS Breakdown Voltage. It features a max IDM of 58A and 0.0135 ohm RDS(ON), making it ideal for SWITCHING applications. This ENHANCEMENT MODE transistor comes in a PLASTIC/EPOXY package with GULL WING terminals, suitable for surface mount installations.
260 mJ
12 A
.0135 ohm
58 A
IRF3205STRR
IRF3205STRR is a N-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 390A IDM, 264mJ EAS, and 0.008 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 200W and can withstand temperatures up to 175°C.
264 mJ
55 V
110 A
75 A
.008 ohm
211 pF
TO-263AB
225
200 W
390 A
Tin/Lead (Sn/Pb)
115 ns
IRFR024NTRR
IRFR024NTRR by International Rectifier is a N-CHANNEL Power FET with 55V DS Breakdown Voltage and 68A IDM. Ideal for SWITCHING applications, it features a 0.075 ohm Drain-Source On Resistance and 71mJ Avalanche Energy Rating. Suitable for surface mount with GULL WING terminals, this transistor operates in ENHANCEMENT MODE.
AVALANCHE RATED
71 mJ
.075 ohm
245
38 W
68 A
IRFR5305TRL
IRFR5305TRL by International Rectifier is a P-CHANNEL FET with 55V DS Breakdown Voltage and 110A IDM. Ideal for SWITCHING applications, it features 0.065 ohm Drain-Source On Resistance and 280mJ Avalanche Energy Rating.
280 mJ
31 A
.065 ohm
IRFR5305TRR
IRFR5305TRR by International Rectifier is a P-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 110A and 0.065 ohm RDS(ON), operating in ENHANCEMENT MODE. This surface mount transistor has a GULL WING terminal form and EAS of 280mJ, suitable for high-power circuit designs.
IRFR9024NTRL
IRFR9024NTRL by International Rectifier is a P-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. It features 44A IDM and 62mJ EAS, operating in ENHANCEMENT MODE with 0.28 ohm RDS(on). The transistor has a max power dissipation of 38W and can withstand temperatures up to 150°C.
62 mJ
11 A
.28 ohm
44 A
IRFZ24NSTRL
IRFZ24NSTRL by International Rectifier is a N-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 68A IDM, 71mJ EAS, and 0.07ohm RDS(on). With a max power dissipation of 45W and operating temp of 175°C, it's suitable for high-power circuits in various electronic devices.
AVALANCHE RATED, HIGH RELIABILITY
.07 ohm
45 W
IRFZ24NSTRR
IRFZ24NSTRR by International Rectifier is a N-CHANNEL Power FET with 55V DS Breakdown Voltage. It is used for SWITCHING applications, featuring 68A IDM and 71mJ EAS. This SINGLE transistor has a 0.07 ohm RDS(on) and operates in ENHANCEMENT MODE at up to 175°C ambient temperature.
IRFZ34NSTRR
IRFZ34NSTRR by International Rectifier is a N-CHANNEL Power FET with 55V DS Breakdown Voltage and 100A IDM. Ideal for SWITCHING applications, it features a built-in diode, 0.04 ohm RDS(on), and 175°C max operating temp. Suitable for surface mount designs in power electronics due to its high current handling capability and low on-resistance.
130 mJ
29 A
.04 ohm
68 W
100 A
IRLR024NTRR
IRLR024NTRR by International Rectifier is a N-CHANNEL FET with 55V DS Breakdown Voltage and 17A Drain Current. Ideal for power applications, it operates in Enhancement Mode with 0.065 ohm On Resistance, offering high efficiency in small outline packages.
LOGIC LEVEL COMPATIBLE
FET General Purpose Powers
IRLR2905TRR
IRLR2905TRR by International Rectifier is an N-CHANNEL FET with a 55V DS breakdown voltage and 0.03 ohm max RDS(on). Ideal for switching applications, it features a single configuration with built-in diode, 160A IDM, and 210mJ EAS. This MOSFET operates in enhancement mode, has GULL WING terminals, and comes in a small outline package.
ULTRA LOW RESISTANCE, AVALANCHE RATED
210 mJ
42 A
.03 ohm
160 A
IRLZ44NSTRR
IRLZ44NSTRR by International Rectifier is a N-CHANNEL Power FET with 55V DS Breakdown Voltage and 160A IDM. Ideal for SWITCHING applications, it features 0.025 ohm Drain-Source On Resistance and 210mJ Avalanche Energy Rating.
LOGIC LEVEL COMPATIBLE, HIGH RELIABILITY
47 A
.025 ohm
IRFR6215TR
IRFR6215TR is a P-CHANNEL FET with 150V DS Breakdown Voltage, 44A IDM, and 0.295 ohm RDS. Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operating in ENHANCEMENT MODE, it offers high power dissipation of 110W and can withstand up to 175°C temperature.
310 mJ
150 V
13 A
.295 ohm
240
110 W
IRF7413A
IRF7413A by International Rectifier is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 58A IDM, 260mJ EAS, and 0.0135 ohm RDS(ON). With GULL WING terminals and ENHANCEMENT MODE operation, it offers high performance in a SMALL OUTLINE package.
IRLML6402TR
IRLML6402TR by International Rectifier is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features 22A IDM and 0.065 ohm RDS(ON), operating in ENHANCEMENT MODE at up to 150°C. This surface-mount transistor has a built-in diode, making it suitable for various power management tasks.
11 mJ
20 V
3.7 A
TO-236AB
R-PDSO-G3
1.3 W
22 A
IRF7901D1
IRF7901D1 by International Rectifier is an N-CHANNEL FET for switching applications. It features a min DS breakdown voltage of 30V, max pulsed drain current of 24A, and max operating temperature of 150°C. With a package style of small outline and surface mount capability, it offers efficient power management in various electronic devices.
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
6.2 A
.038 ohm
24 A
IRFR13N20DTRL
IRFR13N20DTRL by International Rectifier is a N-CHANNEL FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 52A and EAS of 130mJ, operating in ENHANCEMENT MODE at up to 175°C. This PLASTIC/EPOXY transistor has a 0.235 ohm Drain-Source On Resistance and can handle up to 110W power dissipation.
200 V
.235 ohm
52 A
IRFR13N20DTR
IRFR13N20DTR by International Rectifier is a N-CHANNEL FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It features 52A Max Pulsed Drain Current and 0.235 ohm Max Drain-Source On Resistance. With a package style of SMALL OUTLINE, it operates at up to 175°C and has a power dissipation of 110W.
IRF7901D1TR
IRF7901D1TR by International Rectifier is an N-CHANNEL FET with 2 SERIES CONNECTED elements and a built-in diode. It operates in ENHANCEMENT MODE for SWITCHING applications, with a Max Pulsed Drain Current of 24A. This PLASTIC/EPOXY package has GULL WING terminals and can handle up to 150°C operating temperature.
IRLML5203
IRLML5203 by International Rectifier is a P-CHANNEL FET with 30V DS breakdown voltage, ideal for SWITCHING applications. It features 24A IDM and 0.098 ohm RDS(on), operating in ENHANCEMENT MODE at up to 150°C. This surface-mount transistor has a PLASTIC/EPOXY body, GULL WING terminals, and built-in DIODE.
3 A
.098 ohm
1.25 W
IRFH5106TR2PBF
IRFH5106TR2PBF by International Rectifier is a N-CHANNEL Power FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 400A and EAS of 96mJ, operating in ENHANCEMENT MODE at up to 150°C. This surface mount transistor has a Drain Current of 21A and 0.0056 ohm On Resistance.
96 mJ
60 V
21 A
.0056 ohm
R-PDSO-N5
114 W
400 A
NO LEAD
IRF6648TR1PBF
IRF6648TR1PBF by International Rectifier is an N-CHANNEL power FET with a min DS breakdown voltage of 60V. It is used for switching applications and has a max pulsed drain current of 260A.
LOW CONDUCTION LOSS
47 mJ
86 A
.007 ohm
R-XBCC-N3
e1
UNSPECIFIED
CHIP CARRIER
2.8 W
260 A
TIN SILVER COPPER
BOTTOM
IRF6645TR1PBF
IRF6645TR1PBF by International Rectifier is a N-CHANNEL FET for SWITCHING applications. It features 100V DS Breakdown Voltage, 45A IDM, and 0.035 ohm RDS(on). With a max power dissipation of 42W and operating temperature up to 150°C, it's ideal for high-power switching circuits.
5.7 A
.035 ohm
42 W
45 A
IRFI4024H-117P
IRFI4024H-117P by International Rectifier is a N-channel Power FET with 55V DS breakdown voltage, 44A IDM, and 0.06 ohm RDS(on). It is used in amplifier applications due to its series connected configuration with built-in diode. The transistor operates in enhancement mode at up to 150°C temperature.
7.4 mJ
ISOLATED
.06 ohm
R-PSFM-T5
FLANGE MOUNT
14 W
MATTE TIN OVER NICKEL
AMPLIFIER
IRF7769L2TR1PBF
IRF7769L2TR1PBF by International Rectifier is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 500A IDM, 260mJ EAS, and 0.0035 ohm RDS(on). Operates in ENHANCEMENT MODE with max temp of 175°C.
395 A
20 A
.0035 ohm
R-XBCC-N9
9
125 W
500 A
IRF7413QTRPBF
IRF7413QTRPBF by International Rectifier is a N-CHANNEL FET with 13A max drain current and 2.5W power dissipation. Ideal for high-power applications, it operates at up to 150°C, making it suitable for various electronic devices requiring efficient power management in compact spaces.
IRF7341QTRPBF
IRF7341QTRPBF by International Rectifier is a N-CHANNEL Power FET with 55V DS Breakdown Voltage, suitable for SWITCHING applications. It features 2 ELEMENTS with BUILT-IN DIODE, capable of handling up to 42A IDM and has a low 0.05 ohm Drain-Source On Resistance. Ideal for high-power switching circuits in various electronic devices.
140 mJ
5.1 A
.05 ohm
2.4 W
IRLR7843CPBF
IRLR7843CPBF by International Rectifier is a N-CHANNEL Power FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 620A IDM, 1440mJ EAS, and 0.0033 ohm RDS(on). With a max power dissipation of 140W and operating temperature of 175°C, it offers high performance in a small outline package.
1440 mJ
161 A
30 A
.0033 ohm
140 W
620 A
Matte Tin (Sn) - with Nickel (Ni) barrier
IRLR7843CTRPBF
IRLR7843CTRPBF by International Rectifier is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 620A and EAS of 1440mJ, making it suitable for high-power operations. With a 0.0033 ohm RDS(on), this MOSFET operates in ENHANCEMENT MODE at up to 175°C.
IRF7495TR
IRF7495TR by International Rectifier is a N-CHANNEL Power FET with 100V DS Breakdown Voltage. It features a built-in diode for SWITCHING applications, with 58A IDM and 0.022 ohm RDS(on). This SMALL OUTLINE transistor operates in ENHANCEMENT MODE at up to 150°C, making it suitable for high-power electronic devices.
180 mJ
7.3 A
.022 ohm
IRFB4310GPBF
IRFB4310GPBF by International Rectifier is a N-CHANNEL Power FET with 100V DS Breakdown Voltage. It features a max IDM of 550A and 0.007 ohm Drain-Source On Resistance, ideal for SWITCHING applications. Operating in ENHANCEMENT MODE, it has a max power dissipation of 300W and can handle up to 130A Drain Current.
980 mJ
130 A
TO-220AB
R-PSFM-T3
300 W
550 A
IRF7493TR
IRF7493TR by International Rectifier is a N-CHANNEL FET with 9.3A max drain current and 2.5W power dissipation. It operates in enhancement mode, suitable for applications requiring high power handling in surface mount configurations at up to 150°C operating temperature.
9.3 A
IRF7831TR
IRF7831TR by International Rectifier is a N-CHANNEL FET with 21A max drain current and 2.5W power dissipation. It operates in enhancement mode, suitable for high-power applications like motor control and power supplies. This surface-mount transistor uses metal-oxide semiconductor technology and can handle up to 150°C operating temperature.
IRFR5505GTRPBF
IRFR5505GTRPBF by International Rectifier is a P-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 64A and EAS of 150mJ, operating in ENHANCEMENT MODE. With a 0.11 ohm RDS(on), it can handle up to 18A drain current and dissipate 57W power at max temp of 175°C.
18 A
.11 ohm
57 W
64 A
IRFR13N20DTRRP
IRFR13N20DTRRP by International Rectifier is a N-CHANNEL FET with 200V DS Breakdown Voltage and 52A IDM. Ideal for SWITCHING applications, it features a 0.235 ohm Drain-Source On Resistance and operates in ENHANCEMENT MODE at up to 150°C.
IRL1104SPBF
IRL1104SPBF by International Rectifier is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 104A ID. Ideal for SWITCHING applications, it features a built-in DIODE, 0.008 ohm RDS(on), and 175°C max operating temp. Perfect for high-power circuit designs requiring efficient switching capabilities in compact spaces.
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
340 mJ
40 V
104 A
167 W
416 A
IRL3715PBF
IRL3715PBF by International Rectifier is a N-CHANNEL Power FET with 20V DS Breakdown Voltage and 210A IDM. Ideal for SWITCHING applications, it features a single configuration with built-in diode and 0.014 ohm Drain-Source On Resistance. Operating in ENHANCEMENT MODE, this transistor has a max power dissipation of 71W and can handle up to 54A Drain Current.
110 mJ
54 A
.014 ohm
71 W
210 A
IRL3715SPBF
IRL3715SPBF by International Rectifier is a N-CHANNEL Power FET with 20V DS Breakdown Voltage and 30A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 210A Pulsed Drain Current, and 0.014ohm On Resistance. Suitable for surface mount with GULL WING terminals, it operates in ENHANCEMENT MODE up to 175°C.
3.8 W
IRL3715ZSPBF
IRL3715ZSPBF by International Rectifier is a N-CHANNEL Power FET with 20V DS Breakdown Voltage and 50A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 0.011 ohm On Resistance, and 175°C Operating Temperature.
44 mJ
50 A
.011 ohm
200 A
IRFB4310ZGPBF
IRFB4310ZGPBF by International Rectifier is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 560A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.006 ohm RDS(on), and 175°C max operating temp.
127 A
.006 ohm
250 W
560 A
IRF7350PBF
IRF7350PBF by International Rectifier is a Power FET with N-Channel and P-Channel types. It features 100V DS Breakdown Voltage, 8.4A IDM, and 0.21 ohm RDS(on). Ideal for switching applications due to its separate configuration with built-in diode elements.
1.5 A
IRLR024ZPBF
IRLR024ZPBF by International Rectifier is a N-CHANNEL Power FET with 55V DS Breakdown Voltage and 64A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.058 ohm RDS(on), and 175°C max operating temp. Perfect for high-power switching circuits in various electronic devices.
AVALANCHE RATED, HIGH RELIABILITY, LOGIC LEVEL COMPATIBLE, ULTRA-LOW RESISTANCE
25 mJ
16 A
.058 ohm
35 W
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