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International Rectifier Power Field Effect Transistors (FET) 59

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
IRF7471PBF by International Rectifier

IRF7471PBF

International Rectifier

IRF7471PBF by International Rectifier is a N-CHANNEL Power FET with 40V DS Breakdown Voltage. It features a single configuration with built-in diode, ideal for switching applications. With a max IDM of 83A and EAS of 300mJ, it operates in enhancement mode at up to 150°C, making it suitable for high-power tasks.

300 mJ

SINGLE WITH BUILT-IN DIODE

40 V

10 A

10 A

.013 ohm

METAL-OXIDE SEMICONDUCTOR

MS-012AA

R-PDSO-G8

e3

1

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

2.5 W

83 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

IRF7471TRPBF by International Rectifier

IRF7471TRPBF

International Rectifier

IRF7471TRPBF by International Rectifier is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 83A IDM. Ideal for SWITCHING applications, it features a SINGLE configuration with built-in diode and operates in ENHANCEMENT MODE. This surface mount transistor has a max power dissipation of 2.5W and can handle up to 10A drain current.

300 mJ

SINGLE WITH BUILT-IN DIODE

40 V

10 A

10 A

.013 ohm

METAL-OXIDE SEMICONDUCTOR

MS-012AA

R-PDSO-G8

e3

1

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

2.5 W

83 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

IRF7492PBF by International Rectifier

IRF7492PBF

International Rectifier

IRF7492PBF by International Rectifier is a N-CHANNEL Power FET with 200V DS Breakdown Voltage. It features a single configuration with built-in diode, suitable for switching applications. With 30A IDM and 0.079 ohm RDS(on), it operates in enhancement mode at temperatures ranging from -55 to 150°C.

130 mJ

SINGLE WITH BUILT-IN DIODE

200 V

3.7 A

3.7 A

.079 ohm

METAL-OXIDE SEMICONDUCTOR

MS-012AA

R-PDSO-G8

e3

1

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

2.5 W

30 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

IRF7805APBF by International Rectifier

IRF7805APBF

International Rectifier

IRF7805APBF by International Rectifier is a N-CHANNEL Power FET with 30V DS Breakdown Voltage and 13A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, operates in ENHANCEMENT MODE, and has a max power dissipation of 2.5W. Suitable for surface mount with GULL WING terminals, it can handle up to 100A pulsed drain current.

SINGLE WITH BUILT-IN DIODE

30 V

13 A

13 A

.011 ohm

METAL-OXIDE SEMICONDUCTOR

MS-012AA

R-PDSO-G8

e3

1

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

2.5 W

100 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

IRFP4232PBF by International Rectifier

IRFP4232PBF

International Rectifier

IRFP4232PBF by International Rectifier is a N-CHANNEL Power FET with 250V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 240A and EAS of 220mJ, making it suitable for high-power operations. With a max ID of 60A and 0.0357 ohm RDS(on), this transistor offers efficient performance in ENHANCEMENT MODE operation.

HIGH RELIABILITY

220 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

250 V

60 A

60 A

.0357 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247AC

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

430 W

240 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN OVER NICKEL

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IRF5305LPBF by International Rectifier

IRF5305LPBF

International Rectifier

IRF5305LPBF is a P-CHANNEL FET with 55V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 110A IDM, 280mJ EAS, and 0.06 ohm RDS(on). Operating at up to 150°C, it has a power dissipation of 110W in an IN-LINE package style.

LOGIC LEVEL COMPATIBLE, AVALANCHE RATED, HIGH RELIABILITY

280 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

55 V

31 A

31 A

.06 ohm

METAL-OXIDE SEMICONDUCTOR

TO-262AA

R-PSIP-T3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

P-CHANNEL

110 W

110 A

Not Qualified

Other Transistors

NO

Matte Tin (Sn) - with Nickel (Ni) barrier

THROUGH-HOLE

SINGLE

30

SWITCHING

SILICON

IRF6646TR1PBF by International Rectifier

IRF6646TR1PBF

International Rectifier

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain-Source On Resistance: .0095 ohm; Minimum DS Breakdown Voltage: 80 V; JESD-609 Code: e4;

230 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

80 V

12 A

.0095 ohm

METAL-OXIDE SEMICONDUCTOR

R-XDSO-G2

e4

1

1

2

ENHANCEMENT MODE

150 Cel

UNSPECIFIED

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

96 A

Not Qualified

YES

SILVER NICKEL

GULL WING

DUAL

30

SWITCHING

SILICON

IRF7749L2TR1PBF by International Rectifier

IRF7749L2TR1PBF

International Rectifier

IRF7749L2TR1PBF by International Rectifier is a N-CHANNEL FET with 60V DS Breakdown Voltage. It has a max IDM of 800A, making it suitable for SWITCHING applications. With an EAS of 260mJ and 0.0015 ohm RDS(on), this transistor operates in ENHANCEMENT MODE efficiently up to 175°C.

260 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

375 A

33 A

.0015 ohm

METAL-OXIDE SEMICONDUCTOR

R-XBCC-N9

e1

1

1

9

ENHANCEMENT MODE

175 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

N-CHANNEL

125 W

800 A

Not Qualified

FET General Purpose Powers

YES

TIN SILVER COPPER

NO LEAD

BOTTOM

SWITCHING

SILICON

IRLH5030TR2PBF by International Rectifier

IRLH5030TR2PBF

International Rectifier

IRLH5030TR2PBF by International Rectifier is a N-CHANNEL FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 400A and EAS of 230mJ, suitable for high-power operations. With a compact SMALL OUTLINE package and 0.0099 ohm RDS(on), it ensures efficient performance in various electronic devices.

230 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

100 A

13 A

.0099 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-N5

e3

1

1

5

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

250 W

400 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

NO LEAD

DUAL

SWITCHING

SILICON

IRF7901D1TRPBF by International Rectifier

IRF7901D1TRPBF

International Rectifier

IRF7901D1TRPBF by International Rectifier is a N-CHANNEL FET with 2 SERIES CONNECTED elements. It has a Max Pulsed Drain Current of 24A, 0.038 ohm Drain-Source On Resistance, and operates in ENHANCEMENT MODE for SWITCHING applications. This small outline transistor can handle up to 150°C operating temperature.

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

30 V

6.2 A

.038 ohm

METAL-OXIDE SEMICONDUCTOR

MS-012AA

R-PDSO-G8

e3

1

2

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

2 W

24 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

IRF7220-TRPBF by International Rectifier

IRF7220-TRPBF

International Rectifier

IRF7220-TRPBF by International Rectifier is a P-CHANNEL FET with 14V DS Breakdown Voltage and 88A IDM. Ideal for power applications, it features a built-in diode, operates in enhancement mode, and has a max operating temperature of 150°C.

110 mJ

SINGLE WITH BUILT-IN DIODE

14 V

11 A

14 A

.012 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-G8

e3

1

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

2.5 W

88 A

Not Qualified

Other Transistors

YES

Matte Tin (Sn)

GULL WING

DUAL

30

SILICON