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85 W Power Field Effect Transistors (FET) 17

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
2SK2847(F) by Toshiba

2SK2847(F)

Toshiba

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 85 W; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1;

SINGLE

8 A

8 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

N-CHANNEL

85 W

FET General Purpose Power

NO

STB15N65M5 by STMicroelectronics

STB15N65M5

STMicroelectronics

STB15N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, 44A IDM, and 0.34 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 85W Power Dissipation and -55 to 150 °C Temperature Range.

160 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

650 V

11 A

11 A

.34 ohm

METAL-OXIDE SEMICONDUCTOR

TO-263AB

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

N-CHANNEL

85 W

44 A

FET General Purpose Power

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

SWITCHING

SILICON

STP11N65M5 by STMicroelectronics

STP11N65M5

STMicroelectronics

STP11N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS breakdown voltage, 36A IDM, and 0.48 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 85W. The transistor has a temp range of -55 to 150 °C and comes in a rectangular package with through-hole terminals.

130 mJ

SINGLE WITH BUILT-IN DIODE

650 V

9 A

9 A

.48 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

85 W

36 A

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

STU10N60M2 by STMicroelectronics

STU10N60M2

STMicroelectronics

STU10N60M2 by STMicroelectronics is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. It features 30A max pulsed drain current and 0.6 ohm max drain-source on resistance. Operating in enhancement mode, it has a power dissipation of 85W and can withstand temperatures from -55 to 150 °C.

110 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

600 V

7.5 A

7.5 A

.6 ohm

METAL-OXIDE SEMICONDUCTOR

TO-251

R-PSIP-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

85 W

30 A

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STB10N60M2 by STMicroelectronics

STB10N60M2

STMicroelectronics

STB10N60M2 by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 30A IDM, 110mJ EAS, and 0.6 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 85W and operates b/w -55 to 150 °C.

110 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

600 V

7.5 A

7.5 A

.6 ohm

METAL-OXIDE SEMICONDUCTOR

.84 pF

TO-263AB

R-PSSO-G2

1

2

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

85 W

30 A

YES

GULL WING

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

BUK9635-55,118 by NXP Semiconductors

BUK9635-55,118

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 85 W; Minimum DS Breakdown Voltage: 55 V; Package Body Material: PLASTIC/EPOXY;

LOGIC LEVEL COMPATIBLE, ESD PROTECTED

45 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

55 V

34 A

34 A

.035 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

85 W

136 A

Not Qualified

FET General Purpose Powers

YES

GULL WING

SINGLE

SWITCHING

SILICON

PHP55N03LTA,127 by NXP Semiconductors

PHP55N03LTA,127

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 85 W; Maximum Drain-Source On Resistance: .018 ohm; Transistor Element Material: SILICON;

60 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

25 V

55 A

55 A

.018 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

85 W

220 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STP5NK65Z by STMicroelectronics

STP5NK65Z

STMicroelectronics

STP5NK65Z by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a 650V breakdown voltage, 20A max pulsed drain current, and operates at up to 150 °C. Ideal for high-efficiency power management in various electronic devices.

AVALANCHE RATED

190 mJ

SINGLE WITH BUILT-IN DIODE

650 V

5 A

5 A

1.8 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

85 W

20 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

NTB90N02 by Onsemi

NTB90N02

Onsemi

NTB90N02 by Onsemi is a N-CHANNEL FET with 24V DS Breakdown Voltage and 200A IDM. Ideal for SWITCHING applications, it features 0.0058 ohm RDS(on) and 733mJ EAS rating. The PLASTIC/EPOXY package with GULL WING terminals operates at up to 150 °C, making it suitable for high-power circuits.

733 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

24 V

90 A

90 A

.0058 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e0

1

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

85 W

200 A

Not Qualified

FET General Purpose Power

YES

TIN LEAD

GULL WING

SINGLE

SWITCHING

SILICON

STB70NH03LT4 by STMicroelectronics

STB70NH03LT4

STMicroelectronics

STB70NH03LT4 from STMicroelectronics is a high-performance N-channel MOSFET designed for efficient switching applications. It features a max drain current of 60 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for power management in compact designs.

300 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

60 A

60 A

.017 ohm

METAL-OXIDE SEMICONDUCTOR

TO-263AB

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

85 W

240 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

STB75NH02LT4 by STMicroelectronics

STB75NH02LT4

STMicroelectronics

STB75NH02LT4 from STMicroelectronics is a high-performance N-channel MOSFET designed for efficient switching applications. It features a max drain current of 75 A, a breakdown voltage of 24 V, and operates at up to 175 °C. Ideal for power management in compact designs, it offers low on-resistance of just 0.014 Ω.

360 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

24 V

75 A

60 A

.014 ohm

METAL-OXIDE SEMICONDUCTOR

TO-263AB

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

85 W

240 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

NTB90N02G by Onsemi

NTB90N02G

Onsemi

NTB90N02G by Onsemi is a N-CHANNEL FET with 24V DS Breakdown Voltage, 200A IDM, and 0.0058 ohm RDS. Ideal for SWITCHING applications due to its 85W Pdiss, EAS of 733mJ, and -55 °C to +150°C operating temp range. Package style: SOIC with Gull Wing terminals.

733 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

24 V

90 A

90 A

.0058 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

85 W

200 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

SINGLE

SWITCHING

SILICON

NTB90N02T4G by Onsemi

NTB90N02T4G

Onsemi

NTB90N02T4G by Onsemi is a N-CHANNEL FET with 24V DS Breakdown Voltage, 200A IDM, and 0.0058 ohm RDS. It's used for SWITCHING applications due to its 85W Pdiss, 733mJ EAS, and ENHANCEMENT MODE operation.

733 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

24 V

90 A

90 A

.0058 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

85 W

200 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

NTP90N02G by Onsemi

NTP90N02G

Onsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 85 W; Transistor Application: SWITCHING; Package Body Material: PLASTIC/EPOXY;

733 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

24 V

90 A

90 A

.0058 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

N-CHANNEL

85 W

200 A

Not Qualified

FET General Purpose Power

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STF12N50M2 by STMicroelectronics

STF12N50M2

STMicroelectronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 85 W; Maximum Drain Current (ID): 10 A; Peak Reflow Temperature (C): NOT SPECIFIED;

SINGLE

10 A

10 A

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

NOT SPECIFIED

N-CHANNEL

85 W

FET General Purpose Power

NO

NOT SPECIFIED

SCT2450KEC by ROHM

SCT2450KEC

ROHM

ROHM's SCT2450KEC is a N-CHANNEL FET with 1200V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode and can handle up to 25A pulsed drain current. With a max power dissipation of 85W and operating temperature of 175°C, it offers reliable performance in various industrial settings.

SINGLE WITH BUILT-IN DIODE

1200 V

10 A

.585 ohm

METAL-OXIDE SEMICONDUCTOR

4 pF

TO-247

R-PSFM-T3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

85 W

25 A

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON CARBIDE

NVTFWS002N04CTAG by Onsemi

NVTFWS002N04CTAG

Onsemi

NVTFWS002N04CTAG by Onsemi is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 27A Drain Current. Ideal for applications requiring high power dissipation, such as automotive electronics. Features include 676A Pulsed Drain Current, 268mJ Avalanche Energy Rating, and -55 to 175 °C Operating Temperature range.

268 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

27 A

27 A

.0024 ohm

METAL-OXIDE SEMICONDUCTOR

41 pF

R-PDSO-F8

e3

1

1

8

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

85 W

676 A

AEC-Q101

YES

MATTE TIN

FLAT

DUAL

30

SILICON