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65 W Power Field Effect Transistors (FET) 17

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
PSMN014-60LS,115 by NXP Semiconductors

PSMN014-60LS,115

NXP Semiconductors

PSMN014-60LS,115 by NXP Semiconductors is a single N-channel MOSFET designed for efficient power management. It supports a max drain current of 40 A and power dissipation of 65 W, operating up to 150 °C. Ideal for applications in automotive and industrial sectors.

SINGLE

40 A

40 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

N-CHANNEL

65 W

FET General Purpose Power

YES

PSMN035-100LS,115 by NXP Semiconductors

PSMN035-100LS,115

NXP Semiconductors

PSMN035-100LS,115 by NXP Semiconductors is a single N-channel MOSFET ideal for power management applications. It supports a max drain current of 27 A and power dissipation of 65 W, operating efficiently up to 150 °C. Its surface mount design enhances versatility in electronic circuits.

SINGLE

27 A

27 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

N-CHANNEL

65 W

FET General Purpose Power

YES

PSMN023-80LS,115 by NXP Semiconductors

PSMN023-80LS,115

NXP Semiconductors

PSMN023-80LS,115 by NXP Semiconductors is an N-channel power FET designed for efficient performance in enhancement mode. It supports a max drain current of 34 A and power dissipation of 65 W, making it ideal for high-temperature applications up to 150 °C. This surface-mount transistor is perfect for power management in various electronic devices.

SINGLE

34 A

34 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

N-CHANNEL

65 W

FET General Purpose Power

YES

PSMN7R0-40LS,115 by NXP Semiconductors

PSMN7R0-40LS,115

NXP Semiconductors

PSMN7R0-40LS,115 by NXP Semiconductors is a single N-channel MOSFET designed for efficient power management. It supports a max drain current of 40 A and power dissipation of 65 W, operating up to 150 °C. Ideal for applications in automotive and industrial sectors.

SINGLE

40 A

40 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

N-CHANNEL

65 W

FET General Purpose Power

YES

2SK3817-DL-E by Onsemi

2SK3817-DL-E

Onsemi

The Onsemi 2SK3817-DL-E is a N-CHANNEL FET with 60A max drain current and 65W power dissipation. It operates in enhancement mode, suitable for high-power applications. With surface mount capability and metal-oxide semiconductor technology, it can handle up to 150 °C operating temperature.

SINGLE

60 A

60 A

METAL-OXIDE SEMICONDUCTOR

e6

1

1

ENHANCEMENT MODE

150 Cel

N-CHANNEL

65 W

FET General Purpose Power

YES

Tin/Bismuth (Sn/Bi)

NTDV20P06LT4G by Onsemi

NTDV20P06LT4G

Onsemi

NTDV20P06LT4G by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 50A and EAS of 304mJ, suitable for high-power operations. With a compact SMALL OUTLINE package and -55 to 175 °C operating range, it offers efficient performance in various electronic designs.

304 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

15.5 A

15.5 A

.15 ohm

METAL-OXIDE SEMICONDUCTOR

120 pF

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

65 W

50 A

AEC-Q101

Other Transistors

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

185 ns

200 ns

FDB7030BLS by Fairchild Semiconductor

FDB7030BLS

Fairchild Semiconductor

Fairchild Semiconductor's FDB7030BLS is a N-CHANNEL Power FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 160A IDM and 0.0105 ohm RDS(ON), operating in ENHANCEMENT MODE at up to 100°C. Suitable for surface mount with GULL WING terminals, this transistor offers a max power dissipation of 65W in a RECTANGULAR package.

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

56 A

56 A

.0105 ohm

METAL-OXIDE SEMICONDUCTOR

TO-263AB

R-PSSO-G2

e0

1

1

2

ENHANCEMENT MODE

100 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

65 W

160 A

Not Qualified

FET General Purpose Power

YES

Tin/Lead (Sn85Pb15)

GULL WING

SINGLE

SWITCHING

SILICON

IPB45N06S3-16 by Infineon Technologies

IPB45N06S3-16

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 65 W; Operating Mode: ENHANCEMENT MODE; No. of Elements: 1;

95 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

55 V

45 A

45 A

.0154 ohm

METAL-OXIDE SEMICONDUCTOR

TO-263AB

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

N-CHANNEL

65 W

180 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SILICON

IPB45N06S3L-13 by Infineon Technologies

IPB45N06S3L-13

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 65 W; JESD-609 Code: e3; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

LOGIC LEVEL COMPATIBLE

95 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

55 V

45 A

45 A

.0131 ohm

METAL-OXIDE SEMICONDUCTOR

TO-263AB

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

N-CHANNEL

65 W

180 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SILICON

IPP45N06S3L-13 by Infineon Technologies

IPP45N06S3L-13

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; No. of Elements: 1; Avalanche Energy Rating (EAS): 95 mJ;

LOGIC LEVEL COMPATIBLE

95 mJ

SINGLE WITH BUILT-IN DIODE

55 V

45 A

45 A

.0134 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

N-CHANNEL

65 W

180 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SILICON

PHP45N03LTA,127 by NXP Semiconductors

PHP45N03LTA,127

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 65 W; No. of Terminals: 3; Transistor Application: SWITCHING;

40 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

25 V

40 A

40 A

.024 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

65 W

160 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

FQB13N10TM by Fairchild Semiconductor

FQB13N10TM

Fairchild Semiconductor

FQB13N10TM by Fairchild Semiconductor is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 51.2A IDM, 95mJ EAS, and 0.18 ohm RDS(on). Operating in ENHANCEMENT MODE, it has a max power dissipation of 65W at 175°C.

95 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

12.8 A

12.8 A

.18 ohm

METAL-OXIDE SEMICONDUCTOR

TO-263AB

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

65 W

51.2 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

FDD8447L_F085 by Fairchild Semiconductor

FDD8447L_F085

Fairchild Semiconductor

FDD8447L_F085 by Fairchild Semiconductor is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 50A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 0.0085 ohm On Resistance, and operates in ENHANCEMENT MODE. Suitable for surface mount with GULL WING terminals, it has a max power dissipation of 65W and can withstand temperatures up to 175°C.

40 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

50 A

.0085 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252AA

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

65 W

Not Qualified

AEC-Q101

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

FDD120AN15A0-F085 by Onsemi

FDD120AN15A0-F085

Onsemi

FDD120AN15A0-F085 by Onsemi is a N-CHANNEL power field effect transistor (FET) with a min DS breakdown voltage of 150V. It is designed for switching applications and has a max drain current of 14A. This surface mount transistor operates in enhancement mode and has a max power dissipation of 65W.

122 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

150 V

14 A

14 A

.12 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252AA

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

65 W

AEC-Q101

FET General Purpose Power

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

SWITCHING

SILICON

NTP8G202NG by Onsemi

NTP8G202NG

Onsemi

NTP8G202NG by Onsemi is a single N-channel Power FET with 9A max drain current and 65W max power dissipation. Ideal for applications requiring high power handling, such as motor control systems or power supplies. Operating temperature up to 150°C ensures reliable performance in demanding environments.

SINGLE

9 A

9 A

METAL-OXIDE SEMICONDUCTOR

e3

1

150 Cel

260

N-CHANNEL

65 W

FET General Purpose Power

NO

TIN

30

NTDV20P06LT4G-VF01 by Onsemi

NTDV20P06LT4G-VF01

Onsemi

NTDV20P06LT4G-VF01 by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 50A and EAS of 304mJ, operating in ENHANCEMENT MODE with -55 to 175 °C temperature range. The transistor has 0.15 ohm RDS(on), DRAIN case connection, and AEC-Q101 compliance.

304 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

15.5 A

15.5 A

.15 ohm

METAL-OXIDE SEMICONDUCTOR

120 pF

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

65 W

50 A

AEC-Q101

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

185 ns

200 ns

DMTH8028LPSW-13 by Diodes Incorporated

DMTH8028LPSW-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 65 W; Maximum Operating Temperature: 175 Cel; Maximum Feedback Capacitance (Crss): 32 pF;

23.4 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

80 V

41.7 A

.025 ohm

METAL-OXIDE SEMICONDUCTOR

32 pF

R-PDSO-F8

1

8

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

65 W

166.8 A

MIL-STD-202

YES

FLAT

DUAL

SWITCHING

SILICON