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63 W Power Field Effect Transistors (FET) 20

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
PSMN5R9-30YL,115 by NXP Semiconductors

PSMN5R9-30YL,115

NXP Semiconductors

PSMN5R9-30YL,115 by NXP Semiconductors is an N-channel power FET designed for high-efficiency applications. It supports a max drain current of 78 A and power dissipation of 63 W, operating up to 175 °C. Ideal for enhancing performance in various electronic circuits.

SINGLE

78 A

78 A

METAL-OXIDE SEMICONDUCTOR

e3

1

1

ENHANCEMENT MODE

175 Cel

260

N-CHANNEL

63 W

FET General Purpose Power

YES

TIN

30

STFW12N120K5 by STMicroelectronics

STFW12N120K5

STMicroelectronics

STFW12N120K5 by STMicroelectronics is a N-CHANNEL FET with 1200V DS breakdown voltage, 48A IDM, and 0.69 ohm RDS. It's used for switching applications due to its 63W power dissipation, ENHANCEMENT MODE operation, and built-in diode in a RECTANGULAR package.

DRAIN

SINGLE WITH BUILT-IN DIODE

1200 V

12 A

12 A

.69 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSFM-T3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

63 W

48 A

FET General Purpose Powers

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

STFW60N65M5 by STMicroelectronics

STFW60N65M5

STMicroelectronics

STFW60N65M5 by STMicroelectronics is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. It features 184A IDM, 1400mJ EAS, and 0.059 ohm RDS(on). The transistor operates in ENHANCEMENT MODE with a max power dissipation of 63W at 150 °C.

ULTRA-LOW RESISTANCE

1400 mJ

SINGLE WITH BUILT-IN DIODE

650 V

46 A

46 A

.059 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

63 W

184 A

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IPD60R600E6 by Infineon Technologies

IPD60R600E6

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 63 W; Transistor Element Material: SILICON; Terminal Position: SINGLE;

133 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

600 V

7.3 A

7.3 A

.6 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

63 W

19 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

SINGLE

SWITCHING

SILICON

IRF530N,127 by NXP Semiconductors

IRF530N,127

NXP Semiconductors

NXP Semiconductors' IRF530N,127 is a N-CHANNEL Power FET with 100V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 68A IDM and 150mJ EAS. With 0.11 ohm RDS(on) and 175°C max temp, this transistor offers high performance in various power circuits.

150 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

15 A

17 A

.11 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

63 W

68 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IPI09N03LA by Infineon Technologies

IPI09N03LA

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 63 W; Maximum Drain-Source On Resistance: .0155 ohm; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

LOGIC LEVEL COMPATIBLE

75 mJ

SINGLE WITH BUILT-IN DIODE

25 V

65 A

50 A

.0155 ohm

METAL-OXIDE SEMICONDUCTOR

TO-262AA

R-PSIP-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

63 W

350 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IPP09N03LA by Infineon Technologies

IPP09N03LA

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 63 W; Package Body Material: PLASTIC/EPOXY; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

LOGIC LEVEL COMPATIBLE

75 mJ

SINGLE WITH BUILT-IN DIODE

25 V

65 A

50 A

.0155 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

63 W

350 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IPB09N03LA by Infineon Technologies

IPB09N03LA

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 63 W; Package Body Material: PLASTIC/EPOXY; Maximum Drain Current (Abs) (ID): 50 A;

LOGIC LEVEL COMPATIBLE

75 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

25 V

50 A

50 A

.0151 ohm

METAL-OXIDE SEMICONDUCTOR

TO-263AB

R-PSSO-G2

e0

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

220

N-CHANNEL

63 W

350 A

Not Qualified

FET General Purpose Power

YES

TIN LEAD

GULL WING

SINGLE

SWITCHING

SILICON

IPF09N03LA by Infineon Technologies

IPF09N03LA

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 63 W; Package Style (Meter): SMALL OUTLINE; Avalanche Energy Rating (EAS): 75 mJ;

LOGIC LEVEL COMPATIBLE

75 mJ

SINGLE WITH BUILT-IN DIODE

25 V

50 A

50 A

.0148 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252

R-PSSO-G3

e0

1

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

63 W

350 A

Not Qualified

FET General Purpose Power

YES

TIN LEAD

GULL WING

SINGLE

SWITCHING

SILICON

IPD09N03LAG by Infineon Technologies

IPD09N03LAG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 63 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Body Material: PLASTIC/EPOXY;

LOGIC LEVEL COMPATIBLE

75 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

25 V

50 A

50 A

.0148 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252AA

R-PSSO-G2

e3

3

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

63 W

350 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

IPF09N03LAG by Infineon Technologies

IPF09N03LAG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 63 W; Minimum DS Breakdown Voltage: 25 V; Moisture Sensitivity Level (MSL): 3;

LOGIC LEVEL COMPATIBLE

75 mJ

SINGLE WITH BUILT-IN DIODE

25 V

50 A

50 A

.0148 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252

R-PSSO-G3

e3

3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

63 W

350 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

IPS09N03LAG by Infineon Technologies

IPS09N03LAG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 63 W; Package Shape: RECTANGULAR; Maximum Operating Temperature: 175 Cel;

LOGIC LEVEL COMPATIBLE

75 mJ

SINGLE WITH BUILT-IN DIODE

25 V

50 A

50 A

.015 ohm

METAL-OXIDE SEMICONDUCTOR

TO-251

R-PSIP-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

63 W

350 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IPU09N03LAG by Infineon Technologies

IPU09N03LAG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 63 W; JESD-609 Code: e3; Qualification: Not Qualified;

LOGIC LEVEL COMPATIBLE

75 mJ

SINGLE WITH BUILT-IN DIODE

25 V

50 A

50 A

.015 ohm

METAL-OXIDE SEMICONDUCTOR

TO-251AA

R-PSIP-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

63 W

350 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IPB09N03LAG by Infineon Technologies

IPB09N03LAG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 63 W; Operating Mode: ENHANCEMENT MODE; Maximum Drain Current (Abs) (ID): 50 A;

LOGIC LEVEL COMPATIBLE

75 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

25 V

50 A

50 A

.0151 ohm

METAL-OXIDE SEMICONDUCTOR

TO-263AB

R-PSSO-G2

e3

3

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

63 W

350 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

BSC048N025SG by Infineon Technologies

BSC048N025SG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 63 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Pulsed Drain Current (IDM): 200 A;

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

185 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

25 V

89 A

19 A

.0048 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F8

e3

3

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

63 W

200 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

STFW42N60M2-EP by STMicroelectronics

STFW42N60M2-EP

STMicroelectronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 63 W; Transistor Application: SWITCHING; Maximum Drain Current (ID): 34 A;

800 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

600 V

34 A

.087 ohm

METAL-OXIDE SEMICONDUCTOR

2.5 pF

R-PSFM-T3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

63 W

136 A

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

SIHD1K4N60E-GE3 by Vishay Intertechnology

SIHD1K4N60E-GE3

Vishay Intertechnology

SIHD1K4N60E-GE3 by Vishay Intertechnology is a power FET with N-channel polarity, 600V DS breakdown voltage, and 5A max pulsed drain current. It is used for switching applications in small outline packages.

AVALANCHE RATED

14 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

600 V

4.2 A

4.2 A

1.45 ohm

METAL-OXIDE SEMICONDUCTOR

4 pF

TO-252AA

R-PSSO-G2

1

2

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

63 W

5 A

YES

GULL WING

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

64 ns

66 ns

IPD06P004NATMA1 by Infineon Technologies

IPD06P004NATMA1

Infineon Technologies

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 63 W; Package Style (Meter): SMALL OUTLINE; Moisture Sensitivity Level (MSL): 1;

209 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

16.4 A

16.4 A

.09 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252

R-PSSO-G2

1

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

P-CHANNEL

63 W

65.6 A

YES

GULL WING

SINGLE

SILICON

IPB65R225C7ATMA2 by Infineon Technologies

IPB65R225C7ATMA2

Infineon Technologies

Infineon's IPB65R225C7ATMA2 is a N-CHANNEL FET with 650V DS breakdown voltage and 41A IDM. Ideal for switching applications, it operates in enhancement mode with 0.225 ohm RDS(on) and 63W power dissipation. Suitable for high-power systems requiring efficient performance in a compact package.

48 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

650 V

11 A

.225 ohm

METAL-OXIDE SEMICONDUCTOR

TO-263AB

R-PSSO-G2

1

1

2

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

63 W

41 A

YES

GULL WING

SINGLE

SWITCHING

SILICON

NTTFS5CS70NLTWG by Onsemi

NTTFS5CS70NLTWG

Onsemi

NTTFS5CS70NLTWG by Onsemi is a Power FET with 60V DS Breakdown Voltage, 16A ID, and 0.0091 ohm RDS(ON). Ideal for applications requiring high power dissipation in small outline packages. Operating from -55 to 175 °C, it suits various enhancement mode circuit designs.

166 mJ

SINGLE WITH BUILT-IN DIODE

60 V

16 A

16 A

.0091 ohm

METAL-OXIDE SEMICONDUCTOR

15 pF

R-PDSO-F8

e3

1

8

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

63 W

440 A

YES

Matte Tin (Sn)

FLAT

DUAL

NOT SPECIFIED

SILICON