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56.6 W Power Field Effect Transistors (FET) 5

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NTD4857N-1G by Onsemi

NTD4857N-1G

Onsemi

NTD4857N-1G by Onsemi is a Power FET with N-channel configuration and built-in diode, ideal for switching applications. It features a 25V min DS breakdown voltage, 156A max pulsed drain current, and 0.008 ohm max drain-source resistance. Operating in enhancement mode, it has a 175 °C max temp rating and 56.6W power dissipation capability.

144.5 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

25 V

78 A

12 A

.008 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSIP-T3

e3

1

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

N-CHANNEL

56.6 W

156 A

Not Qualified

FET General Purpose Power

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

NTD12N10T4 by Onsemi

NTD12N10T4

Onsemi

NTD12N10T4 by Onsemi is a Power FET with 100V DS Breakdown Voltage, 36A IDM, and 0.165 ohm RDS(on). Ideal for SWITCHING applications in ENHANCEMENT MODE, this N-CHANNEL transistor features a built-in DIODE and operates at up to 175 °C.

75 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

12 A

12 A

.165 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e0

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

56.6 W

36 A

Not Qualified

FET General Purpose Power

YES

TIN LEAD

GULL WING

SINGLE

SWITCHING

SILICON

NTD12N10T4G by Onsemi

NTD12N10T4G

Onsemi

NTD12N10T4G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 100V DS Breakdown Voltage, 36A Max Pulsed Drain Current, and 0.165 ohm Max Drain-Source Resistance. Ideal for high-power switching circuits in various electronic devices.

75 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

12 A

12 A

.165 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

56.6 W

36 A

Not Qualified

FET General Purpose Power

YES

Tin (Sn)

GULL WING

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

NTD12N10-1G by Onsemi

NTD12N10-1G

Onsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 56.6 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): 12 A;

75 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

12 A

12 A

.165 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSIP-T3

e3

1

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NOT SPECIFIED

N-CHANNEL

56.6 W

36 A

Not Qualified

FET General Purpose Power

NO

Tin (Sn)

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

NTD12N10G by Onsemi

NTD12N10G

Onsemi

NTD12N10G by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 100V DS Breakdown Voltage, 36A IDM, and 0.165 ohm Drain-Source Resistance. The transistor operates in ENHANCEMENT MODE with a max power dissipation of 56.6W at 175 °C temperature.

75 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

12 A

12 A

.165 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

56.6 W

36 A

Not Qualified

FET General Purpose Power

YES

Tin (Sn)

GULL WING

SINGLE

NOT SPECIFIED

SWITCHING

SILICON