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55 W Power Field Effect Transistors (FET) 22

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
PSMN5R8-30LL,115 by NXP Semiconductors

PSMN5R8-30LL,115

NXP Semiconductors

PSMN5R8-30LL,115 by NXP Semiconductors is an N-channel power FET designed for efficient switching applications. It supports a max drain current of 40 A and power dissipation of 55 W, operating up to 150 °C. Ideal for high-performance power management in various electronic devices.

SINGLE

40 A

40 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

N-CHANNEL

55 W

FET General Purpose Power

YES

PSMN8R5-100XSQ by NXP Semiconductors

PSMN8R5-100XSQ

NXP Semiconductors

PSMN8R5-100XSQ by NXP Semiconductors is an N-channel enhancement mode FET ideal for high-efficiency power applications. It supports a max drain current of 49 A and power dissipation of 55 W, operating up to 175 °C. This transistor is perfect for automotive and industrial uses.

SINGLE

49 A

49 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

175 Cel

N-CHANNEL

55 W

FET General Purpose Power

NO

PSMN3R9-60XSQ by NXP Semiconductors

PSMN3R9-60XSQ

NXP Semiconductors

PSMN3R9-60XSQ by NXP Semiconductors is an N-channel enhancement mode FET ideal for high-efficiency power applications. It supports a max drain current of 75 A and power dissipation of 55 W, operating up to 175 °C. Perfect for automotive and industrial uses.

SINGLE

75 A

75 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

175 Cel

N-CHANNEL

55 W

FET General Purpose Power

NO

NTD2955PT4G by Onsemi

NTD2955PT4G

Onsemi

NTD2955PT4G by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features 36A Max IDM and 0.18 ohm RDS(ON), suitable for ENHANCEMENT MODE operation. With a compact GULL WING package style and 175°C Max Operating Temp, it offers high power dissipation of 55W in various electronic designs.

216 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

12 A

12 A

.18 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

P-CHANNEL

55 W

36 A

Not Qualified

Other Transistors

YES

TIN

GULL WING

SINGLE

SWITCHING

SILICON

NTDV18N06LT4G by Onsemi

NTDV18N06LT4G

Onsemi

NTDV18N06LT4G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 18A Drain Current, and 0.065 ohm On Resistance. Ideal for SWITCHING applications, it features an ENHANCEMENT MODE and built-in DIODE in a PLASTIC/EPOXY package. AEC-Q101 compliant, it operates b/w -55 to 175 °C with fast turn-on/off times of 180/120 ns.

72 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

18 A

18 A

.065 ohm

METAL-OXIDE SEMICONDUCTOR

80 pF

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

55 W

55 W

54 A

AEC-Q101

YES

Tin (Sn)

GULL WING

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

120 ns

180 ns

NVD5414NT4G by Onsemi

NVD5414NT4G

Onsemi

NVD5414NT4G by Onsemi is a N-CHANNEL FET for SWITCHING applications. Features include 60V DS Breakdown Voltage, 75A IDM, and 0.037 ohm RDS(on). Suitable for automotive (AEC-Q101) and industrial use with 175 °C max operating temp.

86.4 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

24 A

24 A

.037 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

55 W

75 A

AEC-Q101

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

STD30NE06LT4 by STMicroelectronics

STD30NE06LT4

STMicroelectronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 55 W; Package Body Material: PLASTIC/EPOXY; Minimum DS Breakdown Voltage: 60 V;

100 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

30 A

30 A

.03 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252AA

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

55 W

120 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

STD40NF03LT4 by STMicroelectronics

STD40NF03LT4

STMicroelectronics

STD40NF03LT4 by STMicroelectronics is a robust N-channel FET designed for efficient switching applications. It features a max drain current of 40 A, a breakdown voltage of 30 V, and operates at up to 175 °C. Ideal for power management in compact electronic devices.

LOGIC LEVEL COMPATIBLE, LOW THRESHOLD

850 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

40 A

40 A

.011 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252AA

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

55 W

160 A

Not Qualified

FET General Purpose Power

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

SWITCHING

SILICON

STD40NF3LLT4 by STMicroelectronics

STD40NF3LLT4

STMicroelectronics

STD40NF3LLT4 by STMicroelectronics is a N-CHANNEL Power FET with 30V DS Breakdown Voltage and 40A Drain Current. Ideal for SWITCHING applications, it features a built-in DIODE, 160A Pulsed Drain Current, and 55W Power Dissipation in a RECTANGULAR package.

LOGIC LEVEL COMPATIBLE

850 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

40 A

40 A

.011 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252AA

R-PSSO-G2

e3

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

55 W

160 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

FQD7P20TF by Fairchild Semiconductor

FQD7P20TF

Fairchild Semiconductor

FQD7P20TF by Fairchild Semiconductor is a P-CHANNEL Power FET with 200V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 22.8A and EAS of 570mJ, operating in ENHANCEMENT MODE at up to 150°C. This surface-mount transistor has a 0.69 ohm RDS(on) and can handle up to 55W power dissipation.

570 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

200 V

5.7 A

5.7 A

.69 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

P-CHANNEL

55 W

22.8 A

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

FQD12N20LTF by Fairchild Semiconductor

FQD12N20LTF

Fairchild Semiconductor

FQD12N20LTF by Fairchild Semiconductor is a N-CHANNEL Power FET with 200V DS Breakdown Voltage, 36A IDM, and 0.32 ohm RDS(on). It is used for SWITCHING applications in ENHANCEMENT MODE with 55W Pdiss and -55 to 150°C operating temp.

210 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

200 V

9 A

9 A

.32 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

55 W

36 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

NTD2955-1G by Onsemi

NTD2955-1G

Onsemi

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 55 W; Transistor Element Material: SILICON; Package Style (Meter): IN-LINE;

216 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

12 A

12 A

.18 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSIP-T3

e3

1

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

P-CHANNEL

55 W

36 A

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

30

SWITCHING

SILICON

NTD2955G by Onsemi

NTD2955G

Onsemi

NTD2955G by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, 36A IDM, and 0.18 ohm RDS. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 55W. The transistor has a SILICON element material and can withstand temperatures up to 175°C.

216 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

12 A

12 A

.18 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

55 W

36 A

Not Qualified

Other Transistors

YES

TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

NTD5414NT4G by Onsemi

NTD5414NT4G

Onsemi

NTD5414NT4G by Onsemi is an N-channel Power FET with 60V DS breakdown voltage and 24A max drain current. Ideal for switching applications, it features a built-in diode, 55W power dissipation, and operates in enhancement mode. Suitable for surface mount assembly with Gull Wing terminals, this MOSFET has a compact rectangular package style.

86.4 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

24 A

24 A

.037 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

55 W

75 A

Not Qualified

AEC-Q101

FET General Purpose Power

YES

TIN

GULL WING

SINGLE

SWITCHING

SILICON

FDD8880_NL by Fairchild Semiconductor

FDD8880_NL

Fairchild Semiconductor

FDD8880_NL by Fairchild Semiconductor is a N-CHANNEL Power FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a 13A Drain Current, 0.015 ohm On Resistance, and operates in ENHANCEMENT MODE. This PLASTIC/EPOXY transistor has GULL WING terminals and can handle up to 55W power dissipation at 175°C.

53 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

13 A

35 A

.015 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252AA

R-PSSO-G2

e3

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

55 W

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

NVMFS5C456NLT1G by Onsemi

NVMFS5C456NLT1G

Onsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 55 W; Maximum Time At Peak Reflow Temperature (s): 30; Maximum Operating Temperature: 175 Cel;

202 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

87 A

87 A

.006 ohm

METAL-OXIDE SEMICONDUCTOR

21 pF

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

55 W

520 A

AEC-Q101

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

30

SILICON

NVMFS5C456NLT3G by Onsemi

NVMFS5C456NLT3G

Onsemi

NVMFS5C456NLT3G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 520A IDM, and 0.006 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance. Enhances performance in power management systems with its high current and low resistance capabilities.

202 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

87 A

87 A

.006 ohm

METAL-OXIDE SEMICONDUCTOR

21 pF

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

55 W

520 A

AEC-Q101

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

30

SILICON

NVMFS5C456NLWFT1G by Onsemi

NVMFS5C456NLWFT1G

Onsemi

NVMFS5C456NLWFT1G by Onsemi is a Power FET with N-CHANNEL polarity, 40V DS Breakdown Voltage, and 520A Pulsed Drain Current. Ideal for applications requiring high power dissipation in small outline packages, such as automotive electronics or industrial control systems.

202 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

87 A

87 A

.006 ohm

METAL-OXIDE SEMICONDUCTOR

21 pF

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

55 W

520 A

AEC-Q101

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

30

SILICON

NVMFS5C456NLWFT3G by Onsemi

NVMFS5C456NLWFT3G

Onsemi

NVMFS5C456NLWFT3G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 520A IDM, and 0.006 ohm RDS(on). Ideal for power applications in automotive industry due to AEC-Q101 standard compliance.

202 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

87 A

87 A

.006 ohm

METAL-OXIDE SEMICONDUCTOR

21 pF

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

55 W

520 A

AEC-Q101

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

30

SILICON

NTMFS5C456NLT3G by Onsemi

NTMFS5C456NLT3G

Onsemi

NTMFS5C456NLT3G by Onsemi is a N-CHANNEL Power FET with 40V DS Breakdown Voltage, 520A IDM, and 0.006 ohm RDS(on). Ideal for power management applications due to its high drain current capacity and low on-resistance. Suitable for use in enhancement mode operation at temperatures ranging from -55 °C to 175°C.

202 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

87 A

87 A

.006 ohm

METAL-OXIDE SEMICONDUCTOR

21 pF

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

55 W

520 A

YES

TIN

FLAT

DUAL

30

SILICON

NVTFWS004N04CTAG by Onsemi

NVTFWS004N04CTAG

Onsemi

NVTFWS004N04CTAG by Onsemi is a N-CHANNEL Power FET with 40V DS Breakdown Voltage and 338A IDM. Ideal for applications requiring high power dissipation, such as automotive systems. Operating in enhancement mode, it features a low 0.0049 ohm Drain-Source Resistance for efficient performance.

122 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

18 A

18 A

.0049 ohm

METAL-OXIDE SEMICONDUCTOR

25 pF

S-PDSO-F8

e3

1

1

8

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

55 W

338 A

AEC-Q101

YES

MATTE TIN

FLAT

DUAL

30

SILICON

NVTYS004N04CTWG by Onsemi

NVTYS004N04CTWG

Onsemi

NVTYS004N04CTWG by Onsemi is a Power FET with 40V DS Breakdown Voltage, 520A IDM, and 202mJ EAS. Ideal for applications requiring high power dissipation in a small outline package, such as automotive electronics.

202 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

20 A

20 A

.004 ohm

METAL-OXIDE SEMICONDUCTOR

21 pF

R-PDSO-X5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

55 W

520 A

AEC-Q101

YES

Matte Tin (Sn) - annealed

UNSPECIFIED

DUAL

30

SILICON