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54 W Power Field Effect Transistors (FET) 8

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NVMFS5885NLT3G by Onsemi

NVMFS5885NLT3G

Onsemi

NVMFS5885NLT3G by Onsemi is a single N-channel Power FET with 39A max drain current and 54W max power dissipation. Ideal for high-power applications, it operates at up to 175 °C and features metal-oxide semiconductor technology. Suitable for surface mount designs, it has matte tin terminal finish and can withstand peak reflow temperature of 260°C for up to 30s.

SINGLE

39 A

39 A

METAL-OXIDE SEMICONDUCTOR

e3

1

1

175 Cel

260

N-CHANNEL

54 W

FET General Purpose Power

YES

MATTE TIN

30

NVMFS5885NLWFT1G by Onsemi

NVMFS5885NLWFT1G

Onsemi

NVMFS5885NLWFT1G by Onsemi is a N-CHANNEL FET with 39A max drain current and 54W power dissipation. Ideal for high-power applications, it operates up to 175 °C, making it suitable for industrial use in harsh environments. Its single configuration and surface mount design enhance ease of integration in various power systems.

SINGLE

39 A

39 A

METAL-OXIDE SEMICONDUCTOR

e3

1

1

175 Cel

260

N-CHANNEL

54 W

FET General Purpose Power

YES

MATTE TIN

30

NVMFS5885NLWFT3G by Onsemi

NVMFS5885NLWFT3G

Onsemi

NVMFS5885NLWFT3G by Onsemi is a N-CHANNEL FET with 39A max drain current and 54W power dissipation. Ideal for power applications, it operates at up to 175 °C, making it suitable for high-temperature environments. With surface mount configuration, it offers efficient performance in various electronic devices.

SINGLE

39 A

39 A

METAL-OXIDE SEMICONDUCTOR

e3

1

1

175 Cel

260

N-CHANNEL

54 W

FET General Purpose Power

YES

TIN

30

NTP13N10 by Onsemi

NTP13N10

Onsemi

NTP13N10 by Onsemi is a Power FET with N-CHANNEL polarity, suitable for SWITCHING applications. It features a 100V DS Breakdown Voltage, 39A IDM, and 0.165 ohm RDS(on). The transistor operates in ENHANCEMENT MODE with a max power dissipation of 54W.

85 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

13 A

13 A

.165 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e0

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

235

N-CHANNEL

54 W

39 A

Not Qualified

FET General Purpose Power

NO

TIN LEAD

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

NTD20P06L-1G by Onsemi

NTD20P06L-1G

Onsemi

NTD20P06L-1G by Onsemi is a P-channel power FET with 60V DS breakdown voltage and 15.5A max drain current. Ideal for switching applications, it features a single configuration with built-in diode and operates in enhancement mode. The transistor has a 0.15 ohm max drain-source resistance and can handle up to 50A pulsed drain current.

304 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

15 A

15.5 A

.15 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSIP-T3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

P-CHANNEL

54 W

50 A

Not Qualified

Other Transistors

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

NTD20P06LG by Onsemi

NTD20P06LG

Onsemi

NTD20P06LG by Onsemi is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max IDM of 50A and EAS of 304mJ, operating in ENHANCEMENT MODE. With a Drain Current of 15.5A and 0.15 ohm RDS(on), it offers high performance in a SMALL OUTLINE package for various power applications.

304 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

15 A

15.5 A

.15 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

54 W

50 A

Not Qualified

Other Transistors

YES

TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

NTP13N10G by Onsemi

NTP13N10G

Onsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 54 W; JESD-30 Code: R-PSFM-T3; Maximum Drain Current (ID): 13 A;

85 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

13 A

13 A

.165 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

N-CHANNEL

54 W

39 A

Not Qualified

FET General Purpose Power

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BSC052N03SG by Infineon Technologies

BSC052N03SG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 54 W; Maximum Operating Temperature: 150 Cel; Moisture Sensitivity Level (MSL): 3;

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

168 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

80 A

18 A

.0082 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F8

e3

3

1

8

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

54 W

200 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON