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49 W Power Field Effect Transistors (FET) 6

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
PSMN011-30YL,115 by NXP Semiconductors

PSMN011-30YL,115

NXP Semiconductors

PSMN011-30YL,115 by NXP Semiconductors is a single N-channel MOSFET designed for high-efficiency applications. It supports a max drain current of 51 A and power dissipation of 49 W, operating up to 175 °C. Ideal for power management in various electronic devices.

SINGLE

51 A

51 A

METAL-OXIDE SEMICONDUCTOR

e3

1

1

ENHANCEMENT MODE

175 Cel

260

N-CHANNEL

49 W

FET General Purpose Power

YES

TIN

30

NVD5865NLT4G by Onsemi

NVD5865NLT4G

Onsemi

NVD5865NLT4G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 203A IDM, and 0.019 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance. Enhances performance in power management systems with its high current handling capabilities.

36 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

38 A

10 A

.019 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

49 W

203 A

Not Qualified

AEC-Q101

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

30

SILICON

FQD5N60CTF by Fairchild Semiconductor

FQD5N60CTF

Fairchild Semiconductor

FQD5N60CTF by Fairchild Semiconductor is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 11.2A IDM, 210mJ EAS, and 49W Max Power Dissipation. Its PLASTIC/EPOXY package with GULL WING terminals makes it suitable for surface mount installations.

210 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

600 V

2.8 A

2.8 A

2.5 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

49 W

11.2 A

Not Qualified

FET General Purpose Power

YES

Matte Tin (Sn)

GULL WING

SINGLE

SWITCHING

SILICON

IPD60R1K5CEATMA1 by Infineon Technologies

IPD60R1K5CEATMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 49 W; Minimum DS Breakdown Voltage: 600 V; JESD-30 Code: R-PSSO-G2;

26 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

600 V

5 A

1.5 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252

R-PSSO-G2

1

2

ENHANCEMENT MODE

150 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

49 W

8 A

YES

GULL WING

SINGLE

SWITCHING

SILICON

IPU60R1K5CEBKMA1 by Infineon Technologies

IPU60R1K5CEBKMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 49 W; Maximum Pulsed Drain Current (IDM): 8 A; Minimum DS Breakdown Voltage: 600 V;

26 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

600 V

5 A

1.5 ohm

METAL-OXIDE SEMICONDUCTOR

TO-251

R-PSIP-T3

1

3

ENHANCEMENT MODE

150 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

49 W

8 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IPU60R1K5CEAKMA1 by Infineon Technologies

IPU60R1K5CEAKMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 49 W; No. of Elements: 1; Package Body Material: PLASTIC/EPOXY;

26 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

600 V

5 A

1.5 ohm

METAL-OXIDE SEMICONDUCTOR

TO-251

R-PSIP-T3

1

3

ENHANCEMENT MODE

150 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

49 W

8 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON