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446 W Power Field Effect Transistors (FET) 8

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NVHL040N65S3HF by Onsemi

NVHL040N65S3HF

Onsemi

NVHL040N65S3HF by Onsemi is a N-CHANNEL Power FET with 650V DS Breakdown Voltage and 162.5A IDM. Ideal for SWITCHING applications, it features 0.04 ohm RDS(on) and 446W Pdiss in a RECTANGULAR package with Matte Tin finish.

1009 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

650 V

65 A

.04 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

446 W

162.5 A

AEC-Q101

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IPZ60R017C7XKSA1 by Infineon Technologies

IPZ60R017C7XKSA1

Infineon Technologies

IPZ60R017C7XKSA1 by Infineon is a N-CHANNEL FET with 600V DS Breakdown Voltage. It's used for SWITCHING applications, featuring 495A IDM and 0.017 ohm RDS(on). The transistor operates in ENHANCEMENT MODE, with a max power dissipation of 446W and an operating temp range from -55 to 150°C.

582 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

600 V

109 A

.017 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T4

e3

1

4

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

446 W

495 A

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

NTHL040N65S3F by Onsemi

NTHL040N65S3F

Onsemi

NTHL040N65S3F by Onsemi is a power FET with 650V DS breakdown voltage, 162.5A IDM, and 0.04 ohm RDS(on). Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 446W. This N-channel transistor has a rectangular package shape and can handle up to 65A ID.

1009 mJ

SINGLE WITH BUILT-IN DIODE

650 V

65 A

65 A

.04 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

446 W

162.5 A

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

NTHL040N65S3HF by Onsemi

NTHL040N65S3HF

Onsemi

NTHL040N65S3HF by Onsemi is a N-CHANNEL FET with 650V DS Breakdown Voltage, 162.5A IDM, and 0.04 ohm RDS(on). Ideal for SWITCHING applications due to its 446W Pdiss, -55 to 150 °C operating temp range, and EAS of 1009 mJ.

1009 mJ

SINGLE WITH BUILT-IN DIODE

650 V

65 A

65 A

.04 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

446 W

162.5 A

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

NVH040N65S3F by Onsemi

NVH040N65S3F

Onsemi

NVH040N65S3F by Onsemi is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. It features 162.5A IDM and 0.04ohm RDS(ON), operating in ENHANCEMENT MODE at temperatures from -55 to 150 °C. Suitable for high-power applications requiring reliable performance.

1009 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

650 V

65 A

.04 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

446 W

162.5 A

AEC-Q101

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IXFP36N60X3 by Littelfuse

IXFP36N60X3

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 446 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; No. of Terminals: 3;

AVALANCHE RATED

750 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

600 V

36 A

.09 ohm

METAL-OXIDE SEMICONDUCTOR

3.6 pF

TO-220AB

R-PSFM-T3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

446 W

48 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IXFH36N60X3 by Littelfuse

IXFH36N60X3

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 446 W; Terminal Form: THROUGH-HOLE; Avalanche Energy Rating (EAS): 750 mJ;

AVALANCHE RATED

750 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

600 V

36 A

.09 ohm

METAL-OXIDE SEMICONDUCTOR

3.6 pF

TO-247AD

R-PSFM-T3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

446 W

48 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IXFH34N65X3 by Littelfuse

IXFH34N65X3

Littelfuse

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 446 W; Transistor Element Material: SILICON; Maximum Drain-Source On Resistance: .1 ohm;

AVALANCHE RATED

750 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

650 V

34 A

.1 ohm

METAL-OXIDE SEMICONDUCTOR

2.6 pF

TO-247

R-PSFM-T3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

446 W

48 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON