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37 W Power Field Effect Transistors (FET) 7

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
PSMN017-30LL,115 by NXP Semiconductors

PSMN017-30LL,115

NXP Semiconductors

PSMN017-30LL,115 by NXP Semiconductors is an N-channel power FET designed for efficient performance in enhancement mode. It supports a max drain current of 15 A and power dissipation of 37 W, operating up to 150 °C. Ideal for high-efficiency applications like DC-DC converters.

SINGLE

15 A

15 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

N-CHANNEL

37 W

FET General Purpose Power

YES

IPS65R950C6AKMA1 by Infineon Technologies

IPS65R950C6AKMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 37 W; Maximum Operating Temperature: 150 Cel; Minimum DS Breakdown Voltage: 650 V;

50 mJ

SINGLE WITH BUILT-IN DIODE

650 V

4.5 A

.95 ohm

METAL-OXIDE SEMICONDUCTOR

TO-251

R-PSIP-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

37 W

12 A

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BFL4036-1E by Onsemi

BFL4036-1E

Onsemi

BFL4036-1E by Onsemi is a N-CHANNEL FET with 14A max drain current and 37W power dissipation. Ideal for applications requiring high-power switching in environments up to 150 °C, such as power supplies and motor control systems.

SINGLE

14 A

14 A

METAL-OXIDE SEMICONDUCTOR

e3

1

150 Cel

N-CHANNEL

37 W

FET General Purpose Power

NO

TIN

NVTFS4C06NWFTAG by Onsemi

NVTFS4C06NWFTAG

Onsemi

NVTFS4C06NWFTAG by Onsemi is a Power FET with 30V DS Breakdown Voltage, 71A Drain Current, and 0.0061 ohm On Resistance. Ideal for automotive applications due to AEC-Q101 standard compliance, it operates in Enhancement Mode with 175°C max temperature and features a built-in diode.

34 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

71 A

71 A

.0061 ohm

METAL-OXIDE SEMICONDUCTOR

S-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

37 W

367 A

AEC-Q101

FET General Purpose Power

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

30

SILICON

NVTFS4C06NWFTWG by Onsemi

NVTFS4C06NWFTWG

Onsemi

NVTFS4C06NWFTWG by Onsemi is a Power FET with 30V DS Breakdown Voltage, 367A IDM, and 0.0061 ohm RDS(on). It is an N-CHANNEL MOSFET suitable for automotive applications due to its AEC-Q101 reference standard certification.

34 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

71 A

71 A

.0061 ohm

METAL-OXIDE SEMICONDUCTOR

S-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

37 W

367 A

AEC-Q101

FET General Purpose Power

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

30

SILICON

IPD60R950C6 by Infineon Technologies

IPD60R950C6

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 37 W; Terminal Position: SINGLE; JEDEC-95 Code: TO-252;

46 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

600 V

4.4 A

4.4 A

.95 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

37 W

12 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

SINGLE

SWITCHING

SILICON

NVMFS5C466NT1G by Onsemi

NVMFS5C466NT1G

Onsemi

NVMFS5C466NT1G by Onsemi is a Power FET with N-CHANNEL polarity, 40V DS breakdown voltage, and 226A pulsed drain current. Ideal for applications requiring high power dissipation in small outline packages, such as automotive electronics or industrial control systems.

70 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

49 A

49 A

.0081 ohm

METAL-OXIDE SEMICONDUCTOR

15 pF

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

37 W

226 A

AEC-Q101

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

30

SILICON