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36 W Power Field Effect Transistors (FET) 8

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
AOTF12N30 by Alpha & Omega Semiconductor

AOTF12N30

Alpha & Omega Semiconductor

AOTF12N30 by Alpha & Omega Semiconductor is a N-CHANNEL FET with 300V DS Breakdown Voltage, ideal for SWITCHING applications. It features 29A IDM and 430mJ EAS, operating in ENHANCEMENT MODE. With a max power dissipation of 36W and -55 to 150 °C temperature range, it offers reliable performance in various electronic systems.

430 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

300 V

11.5 A

.42 ohm

METAL-OXIDE SEMICONDUCTOR

11 pF

TO-220AB

R-PSFM-T3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

36 W

29 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BFL4004-1E by Onsemi

BFL4004-1E

Onsemi

BFL4004-1E by Onsemi is a N-CHANNEL FET with 4.3A ID and 36W power dissipation. Ideal for high-power applications, it operates up to 150 °C with TIN finish terminals. Its METAL-OXIDE SEMICONDUCTOR technology ensures efficient performance in single configurations.

SINGLE

4.3 A

4.3 A

METAL-OXIDE SEMICONDUCTOR

e3

1

150 Cel

N-CHANNEL

36 W

FET General Purpose Powers

NO

TIN

NTD5867NL-1G by Onsemi

NTD5867NL-1G

Onsemi

NTD5867NL-1G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 76A IDM, and 0.05 ohm RDS. Ideal for applications requiring high power dissipation up to 36W in enhancement mode operation. Suitable for various electronic devices due to its N-channel configuration and built-in diode feature.

AVALANCHE RATED

18 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

20 A

20 A

.05 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSIP-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

36 W

36 W

76 A

Not Qualified

NO

TIN

THROUGH-HOLE

SINGLE

SILICON

20.6 ns

19.1 ns

FCPF260N60E-F154 by Onsemi

FCPF260N60E-F154

Onsemi

FCPF260N60E-F154 by Onsemi is a N-CHANNEL FET with 600V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 45A IDM and 292.5mJ EAS. Operating in ENHANCEMENT MODE, it has 0.26 ohm RDS(on) and can handle up to 36W power dissipation.

292.5 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

600 V

15 A

.26 ohm

METAL-OXIDE SEMICONDUCTOR

130 pF

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

36 W

45 A

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

224 ns

82 ns

FCPF260N65FL1-F154 by Onsemi

FCPF260N65FL1-F154

Onsemi

FCPF260N65FL1-F154 by Onsemi is a N-CHANNEL Power FET with 650V DS Breakdown Voltage. It has 45A IDM, 293mJ EAS for SWITCHING applications. With 0.26 ohm RDS(on), it operates in ENHANCEMENT MODE at -55 to 150 °C, making it ideal for high-power switching circuits.

293 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

650 V

15 A

.26 ohm

METAL-OXIDE SEMICONDUCTOR

1 pF

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

36 W

36 W

45 A

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

140 ns

86 ns

NVATS4A101PZT4G by Onsemi

NVATS4A101PZT4G

Onsemi

NVATS4A101PZT4G by Onsemi is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features 81A IDM, 25mJ EAS, and 0.03ohm RDS(ON), operating in the -55 to 175 °C temperature range. Suitable for automotive use (AEC-Q101) due to its robust design and high power dissipation of 36W.

25 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

27 A

27 A

.03 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e6

1

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

P-CHANNEL

36 W

81 A

AEC-Q101

YES

TIN BISMUTH

GULL WING

SINGLE

30

SWITCHING

SILICON

NVTFWS016N06CTAG by Onsemi

NVTFWS016N06CTAG

Onsemi

NVTFWS016N06CTAG by Onsemi is a Power FET with N-CHANNEL polarity, 60V DS Breakdown Voltage, and 160A IDM. Ideal for applications requiring high power dissipation in small outline packages, such as automotive electronics or industrial control systems.

22 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

32 A

32 A

.0163 ohm

METAL-OXIDE SEMICONDUCTOR

5.7 pF

S-PDSO-F8

e3

1

1

8

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

36 W

160 A

AEC-Q101

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

30

SILICON

FCPF11N65 by Onsemi

FCPF11N65

Onsemi

FCPF11N65 by Onsemi is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 33A IDM, 340mJ EAS, and 0.38 ohm RDS(ON). Operating in ENHANCEMENT MODE, it has a max power dissipation of 36W and operates b/w -55 to 150 °C.

340 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

650 V

11 A

.38 ohm

METAL-OXIDE SEMICONDUCTOR

63 pF

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

36 W

33 A

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

370 ns

285 ns