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33 W Power Field Effect Transistors (FET) 13

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NVD5807NT4G by Onsemi

NVD5807NT4G

Onsemi

NVD5807NT4G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 45A IDM, and 0.031 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with a max power dissipation of 33W. The transistor features a built-in diode and can handle up to 175°C operating temperature.

29.4 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

23 A

23 A

.031 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

33 W

45 A

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

NTMFS4C05NT3G by Onsemi

NTMFS4C05NT3G

Onsemi

NTMFS4C05NT3G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage and 174A IDM. Ideal for SWITCHING applications, it features a built-in diode, 0.005 ohm RDS(on), and operates in the -55 to 150 °C temperature range.

84 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

21.7 A

11.9 A

.005 ohm

METAL-OXIDE SEMICONDUCTOR

59 pF

R-PDSO-F6

e3

1

1

6

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

33 W

174 A

FET General Purpose Power

YES

MATTE TIN

FLAT

DUAL

30

SWITCHING

SILICON

FQPF5N60CYDTU by Fairchild Semiconductor

FQPF5N60CYDTU

Fairchild Semiconductor

FQPF5N60CYDTU by Fairchild Semiconductor is a N-CHANNEL Power FET with 4.5A max drain current and 33W max power dissipation. Ideal for applications requiring high power efficiency in enhancement mode operation, such as power supplies and motor control systems.

SINGLE

4.5 A

4.5 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

N-CHANNEL

33 W

FET General Purpose Power

NO

NTD5807NT4G by Onsemi

NTD5807NT4G

Onsemi

NTD5807NT4G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 45A IDM, and 0.031 ohm RDS. Ideal for SWITCHING applications, it features a built-in diode in a PLASTIC/EPOXY package with GULL WING terminals. Operating in ENHANCEMENT MODE, it has a max power dissipation of 33W at 175 °C.

29.4 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

23 A

23 A

.031 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

33 W

45 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

NTTFS5811NLTAG by Onsemi

NTTFS5811NLTAG

Onsemi

NTTFS5811NLTAG by Onsemi is a Power FET with N-CHANNEL polarity, 40V DS Breakdown Voltage, and 211A Max Pulsed Drain Current. It is used in applications requiring high power dissipation, such as automotive electronics and industrial control systems.

65 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

53 A

17 A

.01 ohm

METAL-OXIDE SEMICONDUCTOR

S-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

33 W

211 A

Not Qualified

FET General Purpose Power

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

NOT SPECIFIED

SILICON

NTTFS5811NLTWG by Onsemi

NTTFS5811NLTWG

Onsemi

NTTFS5811NLTWG by Onsemi is a Power FET with N-CHANNEL polarity, 40V DS breakdown voltage, and 211A max pulsed drain current. It is used in applications requiring high power dissipation, such as automotive electronics and industrial control systems.

65 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

53 A

17 A

.01 ohm

METAL-OXIDE SEMICONDUCTOR

S-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

33 W

211 A

Not Qualified

FET General Purpose Power

YES

Tin (Sn)

FLAT

DUAL

NOT SPECIFIED

SILICON

NTTFS5820NLTAG by Onsemi

NTTFS5820NLTAG

Onsemi

NTTFS5820NLTAG by Onsemi is a Power FET with 60V DS Breakdown Voltage, 149A IDM, and 0.0115 ohm RDS(on). It is an N-CHANNEL MOSFET in a PLASTIC/EPOXY package, ideal for power management applications requiring high current handling capabilities.

48 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

37 A

11 A

.0115 ohm

METAL-OXIDE SEMICONDUCTOR

S-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

33 W

149 A

Not Qualified

FET General Purpose Power

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

NOT SPECIFIED

SILICON

NTTFS5820NLTWG by Onsemi

NTTFS5820NLTWG

Onsemi

NTTFS5820NLTWG by Onsemi is a Power FET with 60V DS Breakdown Voltage, 149A IDM, and 0.0115 ohm RDS(on). It is an N-CHANNEL MOSFET in a PLASTIC/EPOXY package ideal for power management applications requiring high current handling capabilities.

48 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

37 A

11 A

.0115 ohm

METAL-OXIDE SEMICONDUCTOR

S-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

33 W

149 A

Not Qualified

FET General Purpose Power

YES

Tin (Sn)

FLAT

DUAL

NOT SPECIFIED

SILICON

PHD3055E,118 by NXP Semiconductors

PHD3055E,118

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 33 W; Moisture Sensitivity Level (MSL): 1; JESD-30 Code: R-PSSO-G2;

25 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

10.3 A

10.3 A

.15 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252AA

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

33 W

41 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

SINGLE

SWITCHING

SILICON

IPA60R230P6XKSA1 by Infineon Technologies

IPA60R230P6XKSA1

Infineon Technologies

Infineon's IPA60R230P6XKSA1 is a N-CHANNEL FET with 600V DS breakdown voltage, ideal for switching applications. Features include 48A IDM, 352mJ EAS, and 0.23 ohm RDS(on). Operating in enhancement mode, it has a max power dissipation of 33W and can handle up to 16.8A ID.

352 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

600 V

16.8 A

.23 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

33 W

48 A

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

FCPF190N65S3L1 by Onsemi

FCPF190N65S3L1

Onsemi

FCPF190N65S3L1 by Onsemi is a N-CHANNEL Power FET with 650V DS Breakdown Voltage. It has 35A IDM, 76mJ EAS, and 0.19 ohm RDS(ON). Ideal for SWITCHING applications in ENHANCEMENT MODE, it operates b/w -55 to 150 °C. Suitable for high-power circuits requiring efficient switching capabilities.

76 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

650 V

14 A

14 A

.19 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

33 W

35 A

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

FDMD8440L by Onsemi

FDMD8440L

Onsemi

FDMD8440L by Onsemi is an N-CHANNEL Power FET with 40V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max IDM of 521A and EAS of 265mJ, making it suitable for high-power operations. With a compact SMALL OUTLINE package style and low 0.0026 ohm RDS(on), it ensures efficient performance in various electronic designs.

265 mJ

SOURCE

COMMON SOURCE, 2 ELEMENTS WITH BUILT-IN DIODE

40 V

87 A

87 A

.0026 ohm

METAL-OXIDE SEMICONDUCTOR

70 pF

R-PDSO-N8

2

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

33 W

521 A

YES

NO LEAD

DUAL

NOT SPECIFIED

SWITCHING

SILICON

68 ns

35 ns

NVD5807NT4G-VF01 by Onsemi

NVD5807NT4G-VF01

Onsemi

NVD5807NT4G-VF01 by Onsemi is a Power FET with 40V DS Breakdown Voltage, 45A IDM, and 0.031 ohm RDS. Ideal for switching applications in automotive electronics due to AEC-Q101 standard compliance and 175 °C max operating temp.

29.4 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

23 A

23 A

.031 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

33 W

45 A

AEC-Q101

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON