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32 W Power Field Effect Transistors (FET) 12

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
2SJ673-AZ by Renesas Electronics

2SJ673-AZ

Renesas Electronics

P-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 32 W; Maximum Operating Temperature: 150 Cel; No. of Elements: 1;

SINGLE

36 A

36 A

METAL-OXIDE SEMICONDUCTOR

1

150 Cel

260

P-CHANNEL

32 W

Other Transistors

NO

10

STP9NK60ZFP by STMicroelectronics

STP9NK60ZFP

STMicroelectronics

STP9NK60ZFP by STMicroelectronics is a N-CHANNEL FET with 600V DS Breakdown Voltage, suitable for SWITCHING applications. It features 28A Max Pulsed Drain Current and 0.95 ohm Max Drain-Source On Resistance. The transistor operates in ENHANCEMENT MODE and has a max power dissipation of 32W, making it ideal for high-power switching circuits.

235 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

600 V

7 A

7 A

.95 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

32 W

28 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

SFR9024TM by Fairchild Semiconductor

SFR9024TM

Fairchild Semiconductor

Fairchild Semiconductor's SFR9024TM is a P-CHANNEL FET for switching applications. It features a 60V DS breakdown voltage, 31A IDM, and 0.28 ohm RDS(on). With a max power dissipation of 32W, it operates in enhancement mode at up to 150°C.

104 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

7.8 A

7.8 A

.28 ohm

METAL-OXIDE SEMICONDUCTOR

TO-252

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

P-CHANNEL

32 W

31 A

Not Qualified

Other Transistors

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

STF9NK60ZD by STMicroelectronics

STF9NK60ZD

STMicroelectronics

STF9NK60ZD by STMicroelectronics is an N-channel FET designed for switching applications, featuring a 600V breakdown voltage and a max drain current of 7A. It operates in enhancement mode with a power dissipation of up to 32W. Ideal for high-voltage circuits, it ensures reliable performance in compact designs.

235 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

600 V

7 A

7 A

.95 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

32 W

28 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

NVMFD5875NLT1G by Onsemi

NVMFD5875NLT1G

Onsemi

NVMFD5875NLT1G by Onsemi is an N-channel Power FET with 60V DS breakdown voltage, 80A IDM, and 0.045 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 compliance, it features a small outline package and operates b/w -55 °C to 175°C.

40 mJ

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

60 V

22 A

7 A

.045 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F8

e3

1

2

8

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

32 W

80 A

AEC-Q101

YES

MATTE TIN

FLAT

DUAL

30

SILICON

15.7 ns

11.3 ns

NVMFD5875NLT3G by Onsemi

NVMFD5875NLT3G

Onsemi

NVMFD5875NLT3G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 80A IDM, and 0.045 ohm RDS(ON). Ideal for automotive applications due to AEC-Q101 standard compliance. Enhances performance in power management systems with its high current handling capabilities.

40 mJ

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

60 V

22 A

7 A

.045 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F8

e3

1

2

8

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

32 W

80 A

AEC-Q101

YES

MATTE TIN

FLAT

DUAL

30

SILICON

15.7 ns

11.3 ns

NVMFD5875NLWFT1G by Onsemi

NVMFD5875NLWFT1G

Onsemi

NVMFD5875NLWFT1G by Onsemi is an N-CHANNEL Power FET with 60V DS Breakdown Voltage, 80A IDM, and 0.045 ohm RDS(ON). Ideal for automotive applications due to AEC-Q101 standard compliance.

40 mJ

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

60 V

22 A

7 A

.045 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F8

e3

1

2

8

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

32 W

80 A

AEC-Q101

YES

MATTE TIN

FLAT

DUAL

30

SILICON

15.7 ns

11.3 ns

NTMFD5875NLT1G by Onsemi

NTMFD5875NLT1G

Onsemi

NTMFD5875NLT1G by Onsemi is a N-CHANNEL Power FET with 60V DS Breakdown Voltage and 80A IDM. Ideal for applications requiring high power dissipation, such as motor control systems or power supplies. Features include 2 elements with built-in diode, small outline package style, and -55 to 175 °C operating temperature range.

40 mJ

DRAIN

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

60 V

7 A

7 A

.045 ohm

METAL-OXIDE SEMICONDUCTOR

36 pF

R-PDSO-F6

2

6

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

32 W

80 A

YES

FLAT

DUAL

NOT SPECIFIED

SILICON

DMN6069SFVWQ-13 by Diodes Incorporated

DMN6069SFVWQ-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 32 W; JESD-609 Code: e3; Avalanche Energy Rating (EAS): 7.2 mJ;

7.2 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

4 A

.069 ohm

METAL-OXIDE SEMICONDUCTOR

28 pF

S-PDSO-F8

e3

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

32 W

56 A

AEC-Q101; IATF 16949; MIL-STD-202

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

DMN6069SFVWQ-7 by Diodes Incorporated

DMN6069SFVWQ-7

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 32 W; Minimum DS Breakdown Voltage: 60 V; Maximum Feedback Capacitance (Crss): 28 pF;

7.2 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

4 A

.069 ohm

METAL-OXIDE SEMICONDUCTOR

28 pF

S-PDSO-F8

e3

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

32 W

56 A

AEC-Q101; IATF 16949; MIL-STD-202

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

DMN6069SFVW-13 by Diodes Incorporated

DMN6069SFVW-13

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 32 W; No. of Terminals: 8; Maximum Drain-Source On Resistance: .069 ohm;

7.2 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

4 A

.069 ohm

METAL-OXIDE SEMICONDUCTOR

28 pF

S-PDSO-F8

e3

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

32 W

56 A

MIL-STD-202

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON

DMN6069SFVW-7 by Diodes Incorporated

DMN6069SFVW-7

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 32 W; Package Style (Meter): SMALL OUTLINE; Operating Mode: ENHANCEMENT MODE;

7.2 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

4 A

.069 ohm

METAL-OXIDE SEMICONDUCTOR

28 pF

S-PDSO-F8

e3

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

32 W

56 A

MIL-STD-202

YES

MATTE TIN

FLAT

DUAL

SWITCHING

SILICON