Loading...

315 W Power Field Effect Transistors (FET) 6

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STH180N10F3-6 by STMicroelectronics

STH180N10F3-6

STMicroelectronics

STH180N10F3-6 by STMicroelectronics is a N-CHANNEL FET with 180A ID and 315W power dissipation. Ideal for high-power applications, it operates up to 175 °C, making it suitable for demanding environments requiring efficient power management in surface-mount configurations.

SINGLE

180 A

180 A

METAL-OXIDE SEMICONDUCTOR

1

175 Cel

N-CHANNEL

315 W

FET General Purpose Powers

YES

STH270N8F7-2 by STMicroelectronics

STH270N8F7-2

STMicroelectronics

STH270N8F7-2 by STMicroelectronics is a N-channel Power FET with 80V DS breakdown voltage, 180A max drain current, and 0.0021 ohm RDS(on). It is used for switching applications in enhancement mode with 720A pulsed drain current.

ULTRA LOW RESISTANCE

1160 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

80 V

180 A

180 A

.0021 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

315 W

720 A

FET General Purpose Powers

YES

GULL WING

SINGLE

SWITCHING

SILICON

STP180N10F3 by STMicroelectronics

STP180N10F3

STMicroelectronics

STP180N10F3 by STMicroelectronics is a N-CHANNEL Power FET with 100V DS Breakdown Voltage. It has 120A Drain Current, 0.0048 ohm On Resistance, and 315W Power Dissipation. Ideal for SWITCHING applications in ENHANCEMENT MODE, it features a SINGLE configuration with BUILT-IN DIODE and operates at up to 175 °C.

SINGLE WITH BUILT-IN DIODE

100 V

120 A

120 A

.0048 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

315 W

480 A

Not Qualified

FET General Purpose Power

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

STP165N10F4 by STMicroelectronics

STP165N10F4

STMicroelectronics

STP165N10F4 by STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 120 A, a breakdown voltage of 100 V, and operates at up to 175 °C. Ideal for high-efficiency power management in various electronic devices.

SINGLE WITH BUILT-IN DIODE

100 V

120 A

120 A

.0051 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

315 W

480 A

Not Qualified

FET General Purpose Power

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

STH185N10F3-2 by STMicroelectronics

STH185N10F3-2

STMicroelectronics

STH185N10F3-2 by STMicroelectronics is a powerful N-channel MOSFET designed for high-efficiency applications. It supports a max drain current of 180 A, power dissipation of 315 W, and operates up to 175 °C. Ideal for power management in industrial systems.

SINGLE

180 A

180 A

METAL-OXIDE SEMICONDUCTOR

1

175 Cel

NOT SPECIFIED

N-CHANNEL

315 W

FET General Purpose Power

YES

NOT SPECIFIED

STH185N10F3-6 by STMicroelectronics

STH185N10F3-6

STMicroelectronics

STH185N10F3-6 by STMicroelectronics is a powerful N-channel MOSFET designed for high-efficiency applications. It supports a max drain current of 180 A, power dissipation of 315 W, and operates up to 175 °C. Ideal for power management in industrial systems.

SINGLE

180 A

180 A

METAL-OXIDE SEMICONDUCTOR

1

175 Cel

NOT SPECIFIED

N-CHANNEL

315 W

FET General Purpose Power

YES

NOT SPECIFIED