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313 W Power Field Effect Transistors (FET) 4

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NTY100N10 by Onsemi

NTY100N10

Onsemi

NTY100N10 by Onsemi is a N-CHANNEL Power FET with 100V DS Breakdown Voltage, 369A IDM, and 0.01 ohm RDS. Ideal for SWITCHING applications due to its 313W Pdiss, EAS of 500mJ, and ENHANCEMENT MODE operation. Package style is IN-LINE with TIN LEAD finish for THROUGH-HOLE mounting.

500 mJ

SINGLE WITH BUILT-IN DIODE

100 V

123 A

123 A

.01 ohm

METAL-OXIDE SEMICONDUCTOR

TO-264AA

R-PSIP-T3

e0

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

235

N-CHANNEL

313 W

369 A

Not Qualified

FET General Purpose Power

NO

TIN LEAD

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

NVHL082N65S3HF by Onsemi

NVHL082N65S3HF

Onsemi

NVHL082N65S3HF by Onsemi is a N-CHANNEL Power FET with 650V DS Breakdown Voltage. Ideal for SWITCHING applications, it features a Max IDM of 100A and 0.082 ohm Drain-Source Resistance. Operating in ENHANCEMENT MODE, this transistor has an EAS of 510mJ and can handle up to 313W power dissipation.

510 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

650 V

40 A

.082 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

313 W

100 A

AEC-Q101

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

NVH082N65S3F by Onsemi

NVH082N65S3F

Onsemi

NVH082N65S3F by Onsemi is a N-CHANNEL Power FET with 650V DS Breakdown Voltage. It is ideal for SWITCHING applications, offering 100A IDM and 510mJ EAS. Operating in ENHANCEMENT MODE, it has a max power dissipation of 313W and can handle up to 150 °C temperature.

510 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

650 V

40 A

.082 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

313 W

100 A

AEC-Q101

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

NVHL082N65S3F by Onsemi

NVHL082N65S3F

Onsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 313 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Case Connection: DRAIN;

510 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

650 V

40 A

40 A

.082 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

313 W

100 A

AEC-Q101

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON