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312 W Power Field Effect Transistors (FET) 4

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STP190N55LF3 by STMicroelectronics

STP190N55LF3

STMicroelectronics

STP190N55LF3 from STMicroelectronics is a powerful N-channel FET designed for switching applications. It features a max drain current of 120 A, a breakdown voltage of 55 V, and operates at up to 175 °C. Ideal for high-efficiency power management in various electronic devices.

1000 mJ

SINGLE WITH BUILT-IN DIODE

55 V

120 A

120 A

.0045 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

312 W

480 A

Not Qualified

FET General Purpose Power

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

STW120NF10 by STMicroelectronics

STW120NF10

STMicroelectronics

STW120NF10 by STMicroelectronics is a N-CHANNEL FET with 100V DS Breakdown Voltage. It has 440A IDM and 550mJ EAS, ideal for SWITCHING applications. Operating in ENHANCEMENT MODE, it offers 0.0105 ohm Drain-Source On Resistance and can handle up to 312W power dissipation.

AVALANCHE RATED

550 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

120 A

110 A

.0105 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

312 W

440 A

Not Qualified

FET General Purpose Power

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

NTBL070N65S3 by Onsemi

NTBL070N65S3

Onsemi

NTBL070N65S3 by Onsemi is a N-CHANNEL FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max IDM of 110A and EAS of 214mJ, suitable for high-power operations. With a Drain Current of 44A and 0.07 ohm RDS(on), it offers efficient performance in ENHANCEMENT MODE operation.

214 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

650 V

44 A

.07 ohm

METAL-OXIDE SEMICONDUCTOR

14.6 pF

R-PSSO-F8

e3

1

1

8

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

312 W

110 A

YES

MATTE TIN

FLAT

SINGLE

30

SWITCHING

SILICON

NVHL072N65S3 by Onsemi

NVHL072N65S3

Onsemi

NVHL072N65S3 by Onsemi is a N-CHANNEL Power FET with 650V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max IDM of 110A and EAS of 214mJ, making it suitable for high-power operations. With an ID of 44A and 0.072 ohm RDS(on), this MOSFET operates in ENHANCEMENT MODE at temperatures ranging from -55 to 150°C.

214 mJ

SINGLE WITH BUILT-IN DIODE

650 V

44 A

44 A

.072 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

312 W

110 A

AEC-Q101

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON