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31 W Power Field Effect Transistors (FET) 11

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NVTFS4C08NWFTAG by Onsemi

NVTFS4C08NWFTAG

Onsemi

NVTFS4C08NWFTAG by Onsemi is a Power FET with 30V DS Breakdown Voltage, 253A IDM, and 0.0059 ohm RDS(on). It is an N-CHANNEL transistor in a PLASTIC/EPOXY package suitable for automotive applications due to AEC-Q101 standard compliance.

20 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

55 A

55 A

.0059 ohm

METAL-OXIDE SEMICONDUCTOR

S-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

31 W

253 A

AEC-Q101

FET General Purpose Power

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

30

SILICON

NVTFS4C08NWFTWG by Onsemi

NVTFS4C08NWFTWG

Onsemi

NVTFS4C08NWFTWG by Onsemi is a Power FET with 30V DS Breakdown Voltage, 253A IDM, and 0.0059 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 compliance. Operating in enhancement mode, it offers high power dissipation of 31W and can withstand temperatures from -55 to 175 °C.

20 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

30 V

55 A

55 A

.0059 ohm

METAL-OXIDE SEMICONDUCTOR

S-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

SQUARE

SMALL OUTLINE

260

N-CHANNEL

31 W

253 A

AEC-Q101

FET General Purpose Power

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

30

SILICON

IPB79CN10NG by Infineon Technologies

IPB79CN10NG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 31 W; JESD-30 Code: R-PSSO-G2; Terminal Finish: MATTE TIN;

17 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

100 V

13 A

13 A

.079 ohm

METAL-OXIDE SEMICONDUCTOR

TO-263AB

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

N-CHANNEL

31 W

52 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

IPI80CN10NG by Infineon Technologies

IPI80CN10NG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 31 W; Operating Mode: ENHANCEMENT MODE; Terminal Form: THROUGH-HOLE;

17 mJ

SINGLE WITH BUILT-IN DIODE

100 V

13 A

13 A

.08 ohm

METAL-OXIDE SEMICONDUCTOR

TO-262AA

R-PSIP-T3

e3

1

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

31 W

52 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IPU78CN10NG by Infineon Technologies

IPU78CN10NG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 31 W; Package Style (Meter): IN-LINE; Terminal Form: THROUGH-HOLE;

17 mJ

SINGLE WITH BUILT-IN DIODE

100 V

13 A

13 A

.078 ohm

METAL-OXIDE SEMICONDUCTOR

TO-251AA

R-PSIP-T3

e3

1

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

31 W

52 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IPU135N03LG by Infineon Technologies

IPU135N03LG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 31 W; Maximum Pulsed Drain Current (IDM): 210 A; Terminal Form: THROUGH-HOLE;

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

20 mJ

SINGLE WITH BUILT-IN DIODE

30 V

30 A

30 A

.0135 ohm

METAL-OXIDE SEMICONDUCTOR

TO-251AA

R-PSIP-T3

e3

1

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

N-CHANNEL

31 W

210 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IPP147N03LG by Infineon Technologies

IPP147N03LG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 31 W; Avalanche Energy Rating (EAS): 20 mJ; Maximum Drain Current (ID): 20 A;

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

20 mJ

SINGLE WITH BUILT-IN DIODE

30 V

20 A

20 A

.0217 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

31 W

140 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

IPA60R380P6XKSA1 by Infineon Technologies

IPA60R380P6XKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 31 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum Operating Temperature: -55 Cel;

210 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

600 V

10.6 A

.38 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

31 W

29 A

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

FCPF250N65S3L1 by Onsemi

FCPF250N65S3L1

Onsemi

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 31 W; Package Style (Meter): FLANGE MOUNT; JESD-30 Code: R-PSFM-T3;

57 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

650 V

12 A

12 A

.25 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

31 W

30 A

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

FCPF250N65S3R0L by Onsemi

FCPF250N65S3R0L

Onsemi

FCPF250N65S3R0L by Onsemi is a N-CHANNEL FET with 650V DS Breakdown Voltage, 30A IDM, and 0.25 ohm RDS(on). Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 31W Power Dissipation and -55 to 150 °C temperature range.

57 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

650 V

12 A

12 A

.25 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

31 W

30 A

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

DMJ65H650SCTI by Diodes Incorporated

DMJ65H650SCTI

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 31 W; Maximum Drain Current (ID): 10 A; No. of Elements: 1;

67.5 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

650 V

10 A

10 A

.6 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

260

N-CHANNEL

31 W

18 A

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON