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28.8 W Power Field Effect Transistors (FET) 6

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NVD3055-150T4G by Onsemi

NVD3055-150T4G

Onsemi

NVD3055-150T4G by Onsemi is a N-channel FET with 60V DS breakdown voltage, 27A pulsed drain current, and 30mJ avalanche energy rating. Ideal for switching applications, it operates in enhancement mode with a max power dissipation of 28.8W at 175 °C.

30 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

9 A

9 A

.15 ohm

METAL-OXIDE SEMICONDUCTOR

40 pF

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

28.8 W

28.8 W

27 A

AEC-Q101

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

30

SWITCHING

SILICON

75 ns

105 ns

NID9N05CLT4 by Onsemi

NID9N05CLT4

Onsemi

NID9N05CLT4 by Onsemi is a single N-channel FET with built-in diode for switching applications. It features a min DS breakdown voltage of 52V, max pulsed drain current of 35A, and max power dissipation of 28.8W. This MOSFET operates in enhancement mode with a max operating temperature of 175 °C, making it suitable for high-power switching applications.

ESD PROTECTED

160 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

52 V

9 A

9 A

.181 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e0

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

28.8 W

35 A

Not Qualified

FET General Purpose Power

YES

TIN LEAD

GULL WING

SINGLE

SWITCHING

SILICON

NID9N05CL by Onsemi

NID9N05CL

Onsemi

NID9N05CL by Onsemi is a Power FET with 52V DS Breakdown Voltage, 35A IDM, and 0.181 ohm RDS(on). Ideal for SWITCHING applications, it features an N-CHANNEL configuration in a PLASTIC/EPOXY package with GULL WING terminals. Operating in ENHANCEMENT MODE, this FET has a max power dissipation of 28.8W and can withstand temperatures up to 175 °C.

ESD PROTECTED

160 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

52 V

9 A

9 A

.181 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e0

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

N-CHANNEL

28.8 W

35 A

Not Qualified

FET General Purpose Power

YES

TIN LEAD

GULL WING

SINGLE

30

SWITCHING

SILICON

NID9N05CLT4G by Onsemi

NID9N05CLT4G

Onsemi

NID9N05CLT4G by Onsemi is a N-CHANNEL FET with 52V DS Breakdown Voltage, 35A IDM, and 0.181 ohm RDS(ON). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 175 °C, making it suitable for high-power tasks.

ESD PROTECTED

160 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

52 V

9 A

9 A

.181 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

28.8 W

35 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

SINGLE

SWITCHING

SILICON

NTD3055-150G by Onsemi

NTD3055-150G

Onsemi

NTD3055-150G by Onsemi is a N-channel Power FET with 60V DS breakdown voltage and 27A IDM. Ideal for switching applications, it features a built-in diode, 30mJ EAS rating, and 0.15 ohm RDS(on). Operating in enhancement mode, it has a max power dissipation of 28.8W and temp range of -55 to 175 °C.

30 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

9 A

9 A

.15 ohm

METAL-OXIDE SEMICONDUCTOR

40 pF

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

28.8 W

28.8 W

27 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

SINGLE

SWITCHING

SILICON

75 ns

105 ns

NID9N05CLG by Onsemi

NID9N05CLG

Onsemi

NID9N05CLG by Onsemi is a N-CHANNEL FET with 52V DS Breakdown Voltage, 35A IDM, and 0.181 ohm RDS(ON). Ideal for SWITCHING applications due to its SINGLE configuration with BUILT-IN DIODE. Operates in ENHANCEMENT MODE at up to 175 °C, making it suitable for high-power tasks.

ESD PROTECTED

160 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

52 V

9 A

9 A

.181 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

e3

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

28.8 W

35 A

Not Qualified

FET General Purpose Power

YES

TIN

GULL WING

SINGLE

SWITCHING

SILICON