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27 W Power Field Effect Transistors (FET) 7

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NVMFD5852NLT1G by Onsemi

NVMFD5852NLT1G

Onsemi

NVMFD5852NLT1G by Onsemi is a Power FET with N-CHANNEL polarity, 40V DS breakdown voltage, and 329A max pulsed drain current. Ideal for applications requiring high power dissipation in small outline packages like automotive electronics due to its 175 °C max operating temp and AEC-Q101 reference standard compliance.

80 mJ

DRAIN

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

40 V

44 A

15 A

.012 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F6

e3

1

2

6

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

27 W

329 A

AEC-Q101

FET General Purpose Power

YES

MATTE TIN

FLAT

DUAL

30

SILICON

NVMFD5852NLWFT1G by Onsemi

NVMFD5852NLWFT1G

Onsemi

NVMFD5852NLWFT1G by Onsemi is an N-CHANNEL Power FET with 40V DS Breakdown Voltage, 329A IDM, and 0.012 ohm RDS(on). It is used in applications requiring high power dissipation and operates in enhancement mode.

80 mJ

DRAIN

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

40 V

44 A

15 A

.012 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F6

e3

1

2

6

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

27 W

329 A

AEC-Q101

FET General Purpose Power

YES

MATTE TIN

FLAT

DUAL

30

SILICON

STU3N45K3 by STMicroelectronics

STU3N45K3

STMicroelectronics

STU3N45K3 by STMicroelectronics is a N-CHANNEL FET with 450V DS Breakdown Voltage, suitable for SWITCHING applications. It features 7.2A Max Pulsed Drain Current and 27W Max Power Dissipation, operating in ENHANCEMENT MODE at up to 150 °C.

SINGLE WITH BUILT-IN DIODE

450 V

1.8 A

1.8 A

3.8 ohm

METAL-OXIDE SEMICONDUCTOR

TO-251

R-PSIP-T3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NOT SPECIFIED

N-CHANNEL

27 W

7.2 A

Not Qualified

FET General Purpose Power

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

PHX23NQ10T,127 by NXP Semiconductors

PHX23NQ10T,127

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 27 W; Terminal Finish: MATTE TIN; Minimum DS Breakdown Voltage: 100 V;

FAST SWITCHING

93 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

100 V

13 A

13 A

.07 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

27 W

52 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

FCPF360N65S3R0L by Onsemi

FCPF360N65S3R0L

Onsemi

FCPF360N65S3R0L by Onsemi is a N-CHANNEL FET with 650V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 25A IDM and 40mJ EAS. Operating in ENHANCEMENT MODE, it has a max power dissipation of 27W and -55 to 150 °C operating temperature range.

40 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

650 V

10 A

10 A

.36 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

27 W

25 A

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

AOD609G by Alpha & Omega Semiconductor

AOD609G

Alpha & Omega Semiconductor

AOD609G by Alpha & Omega Semiconductor is a Power FET with N/P-Channel, 2 elements, built-in diode. It has 40V DS Breakdown Voltage, 30A IDM, and 0.03 ohm RDS(on). Ideal for switching applications in small outline packages with Gull Wing terminals.

DRAIN

COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE

40 V

12 A

12 A

.03 ohm

METAL-OXIDE SEMICONDUCTOR

40 pF

TO-252

R-PSSO-G4

2

4

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL AND P-CHANNEL

2 W

27 W

30 A

YES

GULL WING

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

IPA95R1K2P7XKSA1 by Infineon Technologies

IPA95R1K2P7XKSA1

Infineon Technologies

IPA95R1K2P7XKSA1 by Infineon Technologies is a N-CHANNEL FET with 950V DS breakdown voltage, ideal for switching applications. It features a max pulsed drain current of 16A and an avalanche energy rating of 11mJ. With a package style of FLANGE MOUNT and operating temperature range from -55 to 150 °C, it offers reliable performance in various environments.

11 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

950 V

6 A

6 A

1.2 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

27 W

16 A

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON