Loading...

208 W Power Field Effect Transistors (FET) 6

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
FCA20N60_F109 by Fairchild Semiconductor

FCA20N60_F109

Fairchild Semiconductor

Fairchild Semiconductor's FCA20N60_F109 is a N-CHANNEL Power FET with 600V DS Breakdown Voltage. Ideal for SWITCHING applications, it features 60A IDM and 0.19 ohm RDS(on). Operating in ENHANCEMENT MODE, this transistor has a max power dissipation of 208W and can withstand temperatures up to 150°C.

690 mJ

SINGLE WITH BUILT-IN DIODE

600 V

20 A

20 A

.19 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

208 W

60 A

Not Qualified

FET General Purpose Power

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

SH32N65DM6AG by STMicroelectronics

SH32N65DM6AG

STMicroelectronics

SH32N65DM6AG by STMicroelectronics is an N-channel FET designed for efficient switching applications. It features a 650V breakdown voltage, 120A max pulsed drain current, and operates at temperatures from -55 °C to 150 °C. Ideal for power management in automotive and industrial systems.

778 mJ

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE

650 V

32 A

.097 ohm

METAL-OXIDE SEMICONDUCTOR

.3 pF

R-PDSO-G9

e3

3

2

9

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

N-CHANNEL

208 W

120 A

AEC-Q101

YES

MATTE TIN

GULL WING

DUAL

30

SWITCHING

SILICON

JANSR2N7584T1 by Infineon Technologies

JANSR2N7584T1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 208 W; Minimum Operating Temperature: -55 Cel; Operating Mode: ENHANCEMENT MODE;

344 mJ

ISOLATED

SINGLE WITH BUILT-IN DIODE

200 V

45 A

45 A

.029 ohm

METAL-OXIDE SEMICONDUCTOR

TO-254AA

S-XSFM-P3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

UNSPECIFIED

SQUARE

FLANGE MOUNT

N-CHANNEL

208 W

180 A

Qualified

MIL-19500; RH - 100K Rad(Si)

NO

PIN/PEG

SINGLE

SWITCHING

SILICON

115 ns

165 ns

NTHL095N65S3H by Onsemi

NTHL095N65S3H

Onsemi

NTHL095N65S3H by Onsemi is a Power FET with 650V DS Breakdown Voltage, 84A IDM, and 0.095 ohm RDS(on). Ideal for SWITCHING applications due to its N-CHANNEL configuration and ENHANCEMENT MODE operation. Package style is FLANGE MOUNT with METAL-OXIDE SEMICONDUCTOR technology.

284 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

650 V

30 A

.095 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T3

e3

1

3

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

208 W

84 A

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

NTH4LN095N65S3H by Onsemi

NTH4LN095N65S3H

Onsemi

NTH4LN095N65S3H by Onsemi is a Power FET with 650V DS Breakdown Voltage, 84A IDM, and 0.095 ohm RDS(on). Ideal for SWITCHING applications due to its N-CHANNEL configuration and ENHANCEMENT MODE operation. Package style is FLANGE MOUNT with THROUGH-HOLE terminals.

284 mJ

SINGLE WITH BUILT-IN DIODE

650 V

30 A

.095 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T4

1

4

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

208 W

84 A

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

DMWS120H100SM4 by Diodes Incorporated

DMWS120H100SM4

Diodes Incorporated

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 208 W; Maximum Feedback Capacitance (Crss): 4.16 pF; Package Body Material: PLASTIC/EPOXY;

SINGLE WITH BUILT-IN DIODE

1200 V

37.2 A

.1 ohm

METAL-OXIDE SEMICONDUCTOR

4.16 pF

TO-247

R-PSFM-T4

1

4

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

208 W

87 A

MIL-STD-202

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON CARBIDE