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158 W Power Field Effect Transistors (FET) 8

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NVMFS5830NLT1G by Onsemi

NVMFS5830NLT1G

Onsemi

NVMFS5830NLT1G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 185A Max ID, and 0.0036 ohm RDS(ON). Ideal for automotive applications due to AEC-Q101 standard compliance. Enhances performance in power management systems with its high current handling capabilities.

361 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

185 A

185 A

.0036 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

158 W

1012 A

AEC-Q101

FET General Purpose Power

YES

MATTE TIN

FLAT

DUAL

30

SILICON

NVMFS5830NLT3G by Onsemi

NVMFS5830NLT3G

Onsemi

NVMFS5830NLT3G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 185A Max Drain Current, and 0.0036 ohm Max RDS(on). Ideal for automotive applications due to AEC-Q101 compliance. Features include 361mJ Avalanche Energy Rating and 175 °C Max Operating Temp.

361 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

185 A

185 A

.0036 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

158 W

1012 A

AEC-Q101

FET General Purpose Power

YES

TIN

FLAT

DUAL

30

SILICON

NVMFS5830NLWFT1G by Onsemi

NVMFS5830NLWFT1G

Onsemi

NVMFS5830NLWFT1G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 185A Max ID, and 0.0036 ohm RDS(ON). It's used in power applications due to its 158W Power Dissipation, 1012A IDM, and 361mJ EAS rating. Ideal for automotive industry with AEC-Q101 standard compliance.

361 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

185 A

185 A

.0036 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

158 W

1012 A

AEC-Q101

FET General Purpose Power

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

30

SILICON

NVMFS5830NLWFT3G by Onsemi

NVMFS5830NLWFT3G

Onsemi

NVMFS5830NLWFT3G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 185A Max Drain Current, and 0.0036 ohm Max RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.

361 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

185 A

185 A

.0036 ohm

METAL-OXIDE SEMICONDUCTOR

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

158 W

1012 A

AEC-Q101

FET General Purpose Power

YES

TIN

FLAT

DUAL

30

SILICON

STH140N6F7-2 by STMicroelectronics

STH140N6F7-2

STMicroelectronics

STH140N6F7-2 by STMicroelectronics is a N-channel Power FET with 60V DS breakdown voltage, 320A IDM, and 0.0032 ohm RDS(on). Ideal for switching applications in enhancement mode operation. Features Gull Wing terminals, small outline package style, and can handle up to 175 °C operating temperature.

BULK: 1000

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

80 A

.0032 ohm

METAL-OXIDE SEMICONDUCTOR

193 pF

R-PSSO-G2

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

158 W

320 A

YES

GULL WING

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

IPB110N06LG by Infineon Technologies

IPB110N06LG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 158 W; Transistor Element Material: SILICON; Package Style (Meter): SMALL OUTLINE;

AVALANCHE RATED, LOGIC LEVEL COMPATIBLE

280 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

78 A

78 A

.011 ohm

METAL-OXIDE SEMICONDUCTOR

TO-263AB

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

N-CHANNEL

158 W

312 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

IPB120N06NG by Infineon Technologies

IPB120N06NG

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 158 W; Avalanche Energy Rating (EAS): 280 mJ; No. of Terminals: 2;

AVALANCHE RATED

280 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

75 A

75 A

.0117 ohm

METAL-OXIDE SEMICONDUCTOR

TO-263AB

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

N-CHANNEL

158 W

300 A

Not Qualified

FET General Purpose Power

YES

MATTE TIN

GULL WING

SINGLE

SWITCHING

SILICON

STH140N6F7-6 by STMicroelectronics

STH140N6F7-6

STMicroelectronics

STH140N6F7-6 by STMicroelectronics is an N-channel MOSFET designed for efficient switching applications. It features a max drain current of 80 A, a breakdown voltage of 60 V, and operates at up to 175 °C. Ideal for power management in compact designs.

BULK: 1000

DRAIN

SINGLE WITH BUILT-IN DIODE

60 V

80 A

.0032 ohm

METAL-OXIDE SEMICONDUCTOR

193 pF

R-PSSO-G6

1

6

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

158 W

320 A

YES

GULL WING

SINGLE

NOT SPECIFIED

SWITCHING

SILICON