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128 W Power Field Effect Transistors (FET) 7

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
BUK6208-40C,118 by NXP Semiconductors

BUK6208-40C,118

NXP Semiconductors

The BUK6208-40 °C,118 by NXP Semiconductors is an N-channel power FET designed for high-efficiency applications. It supports a max drain current of 50 A and power dissipation of 128 W, operating up to 175 °C. Ideal for switching and amplification in various electronic circuits.

SINGLE

50 A

50 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

175 Cel

N-CHANNEL

128 W

FET General Purpose Power

YES

IPZ65R095C7 by Infineon Technologies

IPZ65R095C7

Infineon Technologies

IPZ65R095C7 by Infineon Technologies is a N-CHANNEL Power FET with 650V DS Breakdown Voltage and 24A ID. Ideal for SWITCHING applications, it features a built-in diode, 100A IDM, and 0.095 ohm RDS(on). Operating in ENHANCEMENT MODE, this transistor has a max power dissipation of 128W and can withstand temperatures from -55 to 150 °C.

118 mJ

SINGLE WITH BUILT-IN DIODE

650 V

24 A

.095 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T4

e3

1

4

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

128 W

100 A

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

SPP15P10P by Infineon Technologies

SPP15P10P

Infineon Technologies

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 128 W; Terminal Form: THROUGH-HOLE; Maximum Pulsed Drain Current (IDM): 60 A;

AVALANCHE RATED

230 mJ

SINGLE WITH BUILT-IN DIODE

100 V

15 A

15 A

.24 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

1

3

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

P-CHANNEL

128 W

60 A

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SILICON

IPB65R095C7ATMA1 by Infineon Technologies

IPB65R095C7ATMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 128 W; Package Shape: RECTANGULAR; Minimum Operating Temperature: -55 Cel;

118 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

650 V

24 A

24 A

.095 ohm

METAL-OXIDE SEMICONDUCTOR

TO-263AB

R-PSSO-G2

e3

1

1

2

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

128 W

100 A

YES

TIN

GULL WING

SINGLE

SWITCHING

SILICON

IPZ65R095C7XKSA1 by Infineon Technologies

IPZ65R095C7XKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 128 W; Avalanche Energy Rating (EAS): 118 mJ; Minimum DS Breakdown Voltage: 650 V;

118 mJ

SINGLE WITH BUILT-IN DIODE

650 V

24 A

.095 ohm

METAL-OXIDE SEMICONDUCTOR

TO-247

R-PSFM-T4

e3

1

4

ENHANCEMENT MODE

150 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

128 W

100 A

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

NVMFS5C426NT3G by Onsemi

NVMFS5C426NT3G

Onsemi

NVMFS5C426NT3G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage, 900A IDM, and 0.0013 ohm RDS(on). Ideal for power applications in automotive industry due to AEC-Q101 standard compliance.

739 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

235 A

235 A

.0013 ohm

METAL-OXIDE SEMICONDUCTOR

59 pF

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

128 W

900 A

AEC-Q101

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

30

SILICON

NVMFS5C426NWFT3G by Onsemi

NVMFS5C426NWFT3G

Onsemi

NVMFS5C426NWFT3G by Onsemi is a Power FET with 40V DS Breakdown Voltage, 235A Drain Current, and 0.0013 ohm On Resistance. It is an N-CHANNEL MOSFET in a PLASTIC/EPOXY package suitable for automotive applications due to its AEC-Q101 compliance and high power dissipation of 128W.

739 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE

40 V

235 A

235 A

.0013 ohm

METAL-OXIDE SEMICONDUCTOR

59 pF

R-PDSO-F5

e3

1

1

5

ENHANCEMENT MODE

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

128 W

900 A

AEC-Q101

YES

Matte Tin (Sn) - annealed

FLAT

DUAL

30

SILICON