Loading...

SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR Power Field Effect Transistors (FET) 13

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage Highest Frequency Band JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
BTS282ZAKSA1 by Infineon Technologies

BTS282ZAKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR; Surface Mount: NO; Package Shape: RECTANGULAR; Maximum Operating Temperature: 175 Cel; No. of Terminals: 7;

LOGIC LEVEL COMPATIBLE

2000 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR

49 V

80 A

.0095 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSFM-T7

1

7

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

320 A

Not Qualified

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

BTS240AHKSA1 by Infineon Technologies

BTS240AHKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR; Surface Mount: NO; Terminal Position: SINGLE; Maximum Operating Temperature: 150 Cel; Case Connection: DRAIN;

DRAIN

SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR

50 V

58 A

.018 ohm

METAL-OXIDE SEMICONDUCTOR

TO-218

R-PSFM-T3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

232 A

Not Qualified

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

BTS110NKSA1 by Infineon Technologies

BTS110NKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR; Surface Mount: NO; Package Shape: RECTANGULAR; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum DS Breakdown Voltage: 100 V;

DRAIN

SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR

100 V

10 A

.2 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

1

3

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

40 A

NO

THROUGH-HOLE

SINGLE

SILICON

BTS113AE3064NKSA1 by Infineon Technologies

BTS113AE3064NKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR; Surface Mount: NO; Package Style (Meter): FLANGE MOUNT; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON;

DRAIN

SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR

60 V

11.5 A

.17 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

1

3

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

46 A

NO

THROUGH-HOLE

SINGLE

SILICON

BTS244ZE-3043 by Infineon Technologies

BTS244ZE-3043

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 170 W; Transistor Application: SWITCHING; JEDEC-95 Code: TO-220;

AVALANCHE RATED

1650 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR

55 V

35 A

.018 ohm

METAL-OXIDE SEMICONDUCTOR

400 pF

TO-220

R-PSFM-T5

e3

1

5

ENHANCEMENT MODE

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

170 W

188 A

Not Qualified

AEC-Q101

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

100 ns

130 ns

BTS282ZE-3180A by Infineon Technologies

BTS282ZE-3180A

Infineon Technologies

BTS282ZE-3180A by Infineon is a N-channel Power FET with 49V DS breakdown voltage and 320A IDM. It features a built-in diode, temp sensor, and 0.0095 ohm RDS(on), suitable for switching applications. With a max operating temp of 175°C, it's ideal for high-power systems requiring efficient performance.

LOGIC LEVEL COMPATIBLE

2000 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR

49 V

80 A

.0095 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G7

e3

1

7

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

320 A

Not Qualified

YES

TIN

GULL WING

SINGLE

SWITCHING

SILICON

BTS282ZE-3230 by Infineon Technologies

BTS282ZE-3230

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR; Surface Mount: NO; Qualification: Not Qualified; Operating Mode: ENHANCEMENT MODE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

LOGIC LEVEL COMPATIBLE

2000 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR

49 V

80 A

.0095 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSFM-T7

e3

1

7

ENHANCEMENT MODE

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

320 A

Not Qualified

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BTS247ZE3062AATMA2 by Infineon Technologies

BTS247ZE3062AATMA2

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR; Surface Mount: YES; JESD-609 Code: e3; Terminal Finish: TIN; Transistor Application: SWITCHING;

AVALANCHE RATED

1300 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR

55 V

33 A

.028 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G4

e3

1

4

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

180 A

AEC-Q101

YES

TIN

GULL WING

SINGLE

SWITCHING

SILICON

BTS282ZE3180AATMA2 by Infineon Technologies

BTS282ZE3180AATMA2

Infineon Technologies

BTS282ZE3180AATMA2 by Infineon Technologies is a N-CHANNEL Power FET with 49V DS Breakdown Voltage and 320A IDM. It features a built-in diode, temperature sensor, and operates in enhancement mode for switching applications. This transistor has a max ID of 80A, 0.0095 ohm Drain-Source On Resistance, and is suitable for automotive use (AEC-Q101).

AVALANCHE RATED

2000 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR

49 V

80 A

.0095 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G7

e3

1

7

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

320 A

AEC-Q101

YES

TIN

GULL WING

SINGLE

SWITCHING

SILICON

BTS282ZE3230AKSA2 by Infineon Technologies

BTS282ZE3230AKSA2

Infineon Technologies

BTS282ZE3230AKSA2 by Infineon is a N-CHANNEL FET with 49V DS breakdown voltage, 320A IDM, and 0.0095 ohm max RDS(on). Ideal for switching applications in automotive systems due to AEC-Q101 standard compliance and built-in diode & temp sensor.

AVALANCHE RATED

2000 mJ

DRAIN

SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR

49 V

80 A

.0095 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSFM-T7

e3

1

7

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

320 A

AEC-Q101

NO

TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BTS113AE3045ANTMA1 by Infineon Technologies

BTS113AE3045ANTMA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR; Surface Mount: YES; Case Connection: DRAIN; Terminal Form: GULL WING; Transistor Element Material: SILICON;

LOGIC LEVEL COMPATIBLE

DRAIN

SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR

60 V

11.5 A

.17 ohm

METAL-OXIDE SEMICONDUCTOR

R-PSSO-G2

1

2

ENHANCEMENT MODE

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

46 A

YES

GULL WING

SINGLE

SWITCHING

SILICON

BTS113ANKSA1 by Infineon Technologies

BTS113ANKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR; Surface Mount: NO; No. of Elements: 1; Package Body Material: PLASTIC/EPOXY; Maximum Drain Current (ID): 11.5 A;

LOGIC LEVEL COMPATIBLE

DRAIN

SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR

60 V

11.5 A

.17 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

46 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BTS121ANKSA1 by Infineon Technologies

BTS121ANKSA1

Infineon Technologies

BTS121ANKSA1 by Infineon is a N-CHANNEL FET with 100V DS breakdown voltage and 88A IDM. It features a built-in diode, temp sensor, and 0.1 ohm RDS(on), ideal for switching applications. Operating in enhancement mode at up to 150°C, it has a rectangular package with through-hole terminals.

LOGIC LEVEL COMPATIBLE

DRAIN

SINGLE WITH BUILT-IN DIODE AND TEMPERATURE SENSOR

100 V

22 A

.1 ohm

METAL-OXIDE SEMICONDUCTOR

TO-220AB

R-PSFM-T3

1

3

ENHANCEMENT MODE

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

88 A

NO

THROUGH-HOLE

SINGLE

SWITCHING

SILICON