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BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR Power Field Effect Transistors (FET) 5

Power Field Effect Transistors (FET)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Avalanche Energy Rating (EAS) Case Connection Configuration Minimum DS Breakdown Voltage Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Drain-Source On Resistance Field Effect Transistor Technology Maximum Feedback Capacitance (Crss) Maximum Gate-Emitter Threshold Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Maximum Pulsed Drain Current (IDM) Qualification Reference Standard Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
MSCSM170HM23CT3AG by Microchip Technology

MSCSM170HM23CT3AG

Microchip Technology

MSCSM170HM23CT3AG by Microchip Technology is a N-CHANNEL Power FET with 4 elements in a bridge configuration. It operates in enhancement mode for switching applications, offering a min DS breakdown voltage of 1700V and max pulsed drain current of 240A. Ideal for high-power systems requiring efficient and reliable performance at temperatures ranging from -40 to 175°C.

ISOLATED

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

1700 V

124 A

.0225 ohm

METAL-OXIDE SEMICONDUCTOR

20 pF

R-XUFM-X25

4

25

ENHANCEMENT MODE

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

240 A

NO

UNSPECIFIED

UPPER

SWITCHING

SILICON CARBIDE

NXH040F120MNF1PTG by Onsemi

NXH040F120MNF1PTG

Onsemi

NXH040F120MNF1PTG by Onsemi is a N-CHANNEL Power FET with 1200V DS Breakdown Voltage, ideal for SWITCHING applications. Featuring a BRIDGE configuration with 4 elements, it has a max IDM of 90A and 0.056 ohm Drain-Source On Resistance. Operating in ENHANCEMENT MODE, this FET utilizes SILICON CARBIDE technology and can handle temperatures from -40 to 175 °C.

ISOLATED

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

1200 V

30 A

.056 ohm

METAL-OXIDE SEMICONDUCTOR

12 pF

R-XUFM-X22

4

22

ENHANCEMENT MODE

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

74 W

90 A

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SWITCHING

SILICON CARBIDE

NXH020F120MNF1PG by Onsemi

NXH020F120MNF1PG

Onsemi

N-CHANNEL; Configuration: BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 119 W; Transistor Element Material: SILICON CARBIDE; Package Body Material: UNSPECIFIED;

ISOLATED

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

1200 V

51 A

.03 ohm

METAL-OXIDE SEMICONDUCTOR

19 pF

R-XUFM-X22

4

22

ENHANCEMENT MODE

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

119 W

153 A

NO

UNSPECIFIED

UPPER

SWITCHING

SILICON CARBIDE

NXH020F120MNF1PTG by Onsemi

NXH020F120MNF1PTG

Onsemi

NXH020F120MNF1PTG by Onsemi is a N-CHANNEL FET with 1200V DS Breakdown Voltage, 153A IDM, and 0.03 ohm RDS(on). Ideal for SWITCHING applications, it features a BRIDGE configuration with 4 elements, SILICON CARBIDE material, and operates b/w -40 to 175 °C.

ISOLATED

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

1200 V

51 A

.03 ohm

METAL-OXIDE SEMICONDUCTOR

19 pF

R-XUFM-X22

4

22

ENHANCEMENT MODE

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

119 W

153 A

NO

UNSPECIFIED

UPPER

SWITCHING

SILICON CARBIDE

NXH040F120MNF1PG by Onsemi

NXH040F120MNF1PG

Onsemi

NXH040F120MNF1PG by Onsemi is a N-CHANNEL Power FET with 1200V DS Breakdown Voltage, 90A IDM, and 0.056 ohm RDS(on). It is used for SWITCHING applications in ENHANCEMENT MODE. This RECTANGULAR package has 4 elements with built-in diode and thermistor, ideal for high-power operations up to 175°C.

ISOLATED

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

1200 V

30 A

.056 ohm

METAL-OXIDE SEMICONDUCTOR

12 pF

R-XUFM-X22

4

22

ENHANCEMENT MODE

175 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

74 W

90 A

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SWITCHING

SILICON CARBIDE