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220 W Power Bipolar Junction Transistors (BJT) 3

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
2STC5949 by STMicroelectronics

2STC5949

STMicroelectronics

2STC5949 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 220W, operates up to 150 °C, and supports collector-emitter voltages of 250V. Ideal for high-performance electronic circuits.

17 A

250 V

SINGLE

35

TO-264AA

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

220 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

25 MHz

2STA2121 by STMicroelectronics

2STA2121

STMicroelectronics

2STA2121 by STMicroelectronics is a PNP power BJT designed for switching applications. It features a max power dissipation of 220W, operates up to 150 °C, and supports collector-emitter voltages of 250V. Ideal for high-performance electronic circuits.

17 A

250 V

SINGLE

35

TO-264AA

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

PNP

220 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

25 MHz

STE07DE220 by STMicroelectronics

STE07DE220

STMicroelectronics

STE07DE220 by STMicroelectronics is a powerful NPN BJT designed for switching applications. It features a max power dissipation of 220 W, operates at up to 125 °C, and supports a collector current of 7 A. Ideal for high-performance electronic circuits, it comes in a flange mount package.

ISOLATED

7 A

SINGLE WITH BUILT-IN FET AND DIODE

R-XUFM-X4

1

4

125 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NPN

220 W

Not Qualified

BIP General Purpose Power

NO

NICKEL

UNSPECIFIED

UPPER

SWITCHING

SILICON