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130 W Power Bipolar Junction Transistors (BJT) 6

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
2STA1962 by STMicroelectronics

2STA1962

STMicroelectronics

PNP; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 30 MHz; Maximum Power Dissipation (Abs): 130 W; Maximum Collector Current (IC): 15 A;

15 A

230 V

SINGLE

35

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

PNP

130 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SWITCHING

SILICON

30 MHz

2STC5242 by STMicroelectronics

2STC5242

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 30 MHz; Maximum Power Dissipation (Abs): 130 W; Maximum Collector Current (IC): 15 A;

15 A

230 V

SINGLE

35

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

NPN

130 W

Not Qualified

Other Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

AMPLIFIER

SILICON

30 MHz

2STW100 by STMicroelectronics

2STW100

STMicroelectronics

2STW100 by STMicroelectronics is a powerful NPN Darlington transistor designed for switching applications. It features a max power dissipation of 130 W, a collector current of 25 A, and operates up to 150 °C. Ideal for high-efficiency circuits with robust performance.

25 A

80 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

300

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

130 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

2STW200 by STMicroelectronics

2STW200

STMicroelectronics

2STW200 by STMicroelectronics is a PNP Darlington BJT designed for switching applications. It features a max power dissipation of 130 W, a min DC current gain (hFE) of 300, and operates up to 150 °C. Ideal for high-power circuits with an 80 V collector-emitter voltage.

25 A

80 V

DARLINGTON WITH BUILT-IN DIODE AND RESISTOR

300

TO-247

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

130 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

2SA1962O(Q) by Toshiba

2SA1962O(Q)

Toshiba

Toshiba's 2SA1962O(Q) is a PNP BJT transistor with max. power dissipation of 130W, max. collector-emitter voltage of 230V, and max. collector current of 15A. Ideal for amplifier applications due to its single configuration and silicon element material, it operates at up to 150°C temperature with a nominal transition frequency of 30MHz.

COLLECTOR

15 A

230 V

SINGLE

80

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

PNP

130 W

Other Transistors

NO

THROUGH-HOLE

SINGLE

AMPLIFIER

SILICON

30 MHz

2SC5242O(Q) by Toshiba

2SC5242O(Q)

Toshiba

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 30 MHz; Maximum Power Dissipation (Abs): 130 W; Maximum Collector Current (IC): 15 A;

COLLECTOR

15 A

230 V

SINGLE

80

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

NPN

130 W

Other Transistors

NO

THROUGH-HOLE

SINGLE

30

AMPLIFIER

SILICON

30 MHz