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DARLINGTON WITH BUILT-IN DIODE Power Bipolar Junction Transistors (BJT) 9

Power Bipolar Junction Transistors (BJT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Base Capacitance Maximum Collector-Emitter Voltage Configuration Minimum DC Current Gain (hFE) Maximum Fall Time (tf) JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Nominal Transition Frequency (fT) Maximum Turn Off Time (toff) Maximum Turn On Time (ton) Maximum VCEsat
ESM3030DV by STMicroelectronics

ESM3030DV

STMicroelectronics

ESM3030DV by STMicroelectronics is a NPN power bipolar junction transistor (BJT) with a max VCEsat of 2.2V and max collector current (IC) of 100A. It is commonly used for switching applications due to its built-in diode and fast fall time of 600ns.

ISOLATED

100 A

300 V

DARLINGTON WITH BUILT-IN DIODE

600 ns

R-XUFM-X4

1

4

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NPN

225 W

225 W

Not Qualified

BIP General Purpose Power

NO

NICKEL

UNSPECIFIED

UPPER

SWITCHING

SILICON

2.2 V

ESM2012DV by STMicroelectronics

ESM2012DV

STMicroelectronics

ESM2012DV by STMicroelectronics is an NPN BJT with a Darlington configuration and built-in diode, ideal for switching applications. It has a max VCEsat of 2V, can handle a collector current of 120A, and dissipate up to 175W. With an operating temperature of 150 °C, it's suitable for high-power industrial applications.

ISOLATED

120 A

125 V

DARLINGTON WITH BUILT-IN DIODE

300 ns

R-XUFM-X4

1

4

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NPN

175 W

175 W

Not Qualified

BIP General Purpose Power

NO

NICKEL

UNSPECIFIED

UPPER

SWITCHING

SILICON

2 V

ESM2030DV by STMicroelectronics

ESM2030DV

STMicroelectronics

ESM2030DV by STMicroelectronics is an NPN BJT transistor with a Darlington configuration and built-in diode, ideal for switching applications. It features a max VCEsat of 2.2V, max IC of 67A, and can handle up to 150W power dissipation. With a max operating temperature of 150 °C and collector-emitter voltage of 300V, it is suitable for high-power electronic circuits.

ISOLATED

67 A

300 V

DARLINGTON WITH BUILT-IN DIODE

600 ns

R-XUFM-X4

1

4

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NPN

150 W

150 W

Not Qualified

BIP General Purpose Power

NO

NICKEL

UNSPECIFIED

UPPER

SWITCHING

SILICON

2.2 V

APT13005DI-G1 by Diodes Incorporated

APT13005DI-G1

Diodes Incorporated

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Collector Current (IC): 4 A; Package Body Material: PLASTIC/EPOXY;

4 A

450 V

DARLINGTON WITH BUILT-IN DIODE

8

TO-251

R-PSIP-T3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

260

NPN

NO

MATTE TIN

THROUGH-HOLE

SINGLE

30

SWITCHING

SILICON

4 MHz

APT13005DT-G1 by Diodes Incorporated

APT13005DT-G1

Diodes Incorporated

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Collector Current (IC): 4 A; Package Style (Meter): FLANGE MOUNT;

4 A

450 V

DARLINGTON WITH BUILT-IN DIODE

8

TO-220AB

R-PSFM-T3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

NPN

NO

MATTE TIN

THROUGH-HOLE

SINGLE

30

SWITCHING

SILICON

4 MHz

APT13005DTF-G1 by Diodes Incorporated

APT13005DTF-G1

Diodes Incorporated

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE; Surface Mount: NO; Nominal Transition Frequency (fT): 4 MHz; Maximum Collector Current (IC): 4 A; Minimum DC Current Gain (hFE): 8;

ISOLATED

4 A

450 V

DARLINGTON WITH BUILT-IN DIODE

8

TO-220AB

R-PSFM-T3

e3

1

3

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

260

NPN

NO

MATTE TIN

THROUGH-HOLE

SINGLE

30

SWITCHING

SILICON

4 MHz

DXT13003DK-13 by Diodes Incorporated

DXT13003DK-13

Diodes Incorporated

NPN; Configuration: DARLINGTON WITH BUILT-IN DIODE; Surface Mount: YES; Nominal Transition Frequency (fT): 4 MHz; Maximum Collector Current (IC): 1.5 A; Package Shape: RECTANGULAR;

COLLECTOR

1.5 A

450 V

DARLINGTON WITH BUILT-IN DIODE

5

TO-252

R-PSSO-G2

e3

1

1

2

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

NPN

YES

Matte Tin (Sn)

GULL WING

SINGLE

NOT SPECIFIED

SILICON

4 MHz

BDW93CFTU by Fairchild Semiconductor

BDW93CFTU

Fairchild Semiconductor

Fairchild Semiconductor's BDW93CFTU is a NPN power BJT with 100V VCEO, 12A IC, and 30W Ptot. Ideal for switching applications, it features a Darlington configuration with built-in diode in a plastic/epoxy package suitable for flange mount. Operating up to 150°C, it offers high DC current gain of hFE ≥100.

ISOLATED

12 A

100 V

DARLINGTON WITH BUILT-IN DIODE

100

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

30 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

BDX53BTU by Fairchild Semiconductor

BDX53BTU

Fairchild Semiconductor

Fairchild Semiconductor's BDX53BTU is a NPN Darlington transistor with built-in diode, ideal for switching applications. With a max collector-emitter voltage of 80V and max collector current of 8A, it can handle up to 60W power dissipation. This through-hole transistor has a min DC current gain of 750 and operates at temperatures up to 150°C.

8 A

80 V

DARLINGTON WITH BUILT-IN DIODE

750

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NPN

60 W

Not Qualified

Other Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

SWITCHING

SILICON

20 MHz