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International Rectifier Other Function Transistors 3

Other Function Transistors
Part# Info Specs
Part RoHS Manufacturer Description Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements Operating Mode Maximum Operating Temperature Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation (Abs) Sub-Category Surface Mount Terminal Finish Maximum Time At Peak Reflow Temperature (s) Nominal Transition Frequency (fT)
SI3443DVTRPBF by International Rectifier

SI3443DVTRPBF

International Rectifier

SI3443DVTRPBF by International Rectifier is a P-CHANNEL FET with 4.4A max drain current and 2W power dissipation. Ideal for applications requiring single configuration, such as power management systems operating at up to 150°C.

SINGLE

4.4 A

4.4 A

METAL-OXIDE SEMICONDUCTOR

e3

2

1

ENHANCEMENT MODE

150 Cel

260

P-CHANNEL

2 W

Other Transistors

YES

MATTE TIN

30

IRF5810TRPBF by International Rectifier

IRF5810TRPBF

International Rectifier

IRF5810TRPBF by International Rectifier is a P-CHANNEL MOSFET with 2.9A max drain current and 0.96W power dissipation. It operates in enhancement mode, suitable for surface mount applications at up to 150°C. Ideal for various electronic devices requiring efficient power management.

2.9 A

2.9 A

METAL-OXIDE SEMICONDUCTOR

e3

2

ENHANCEMENT MODE

150 Cel

260

P-CHANNEL

.96 W

Other Transistors

YES

MATTE TIN

30

IRF7751TRPBF by International Rectifier

IRF7751TRPBF

International Rectifier

IRF7751TRPBF by International Rectifier is a P-CHANNEL FET with 4.5A max drain current and 1W power dissipation. Ideal for surface mount applications, it operates in enhancement mode up to 150°C. Suitable for various electronic devices requiring high power efficiency and thermal performance.

4.5 A

4.5 A

METAL-OXIDE SEMICONDUCTOR

e3

2

ENHANCEMENT MODE

150 Cel

260

P-CHANNEL

1 W

Other Transistors

YES

MATTE TIN

30