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2.5 W Other Function Transistors 6

Other Function Transistors
Part# Info Specs
Part RoHS Manufacturer Description Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements Operating Mode Maximum Operating Temperature Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation (Abs) Sub-Category Surface Mount Terminal Finish Maximum Time At Peak Reflow Temperature (s) Nominal Transition Frequency (fT)
NE651R479A-A by Renesas Electronics

NE651R479A-A

Renesas Electronics

N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Maximum Operating Temperature: 150 Cel; Field Effect Transistor Technology: JUNCTION;

JUNCTION

150 Cel

N-CHANNEL

2.5 W

Other Transistors

YES

PBSS4520X,146 by NXP Semiconductors

PBSS4520X,146

NXP Semiconductors

PBSS4520X,146 from NXP Semiconductors is a single NPN transistor ideal for high-performance applications. It features a max power dissipation of 2.5W, a collector current of 5A, and operates up to 150 °C. This surface-mount device excels in RF amplification and switching tasks.

5 A

SINGLE

200

e3

1

1

150 Cel

260

NPN

2.5 W

Other Transistors

YES

TIN

30

100 MHz

2SA2059(TE12L,F) by Toshiba

2SA2059(TE12L,F)

Toshiba

PNP; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.5 W; Maximum Collector Current (IC): 3 A; Minimum DC Current Gain (hFE): 200;

3 A

SINGLE

200

1

150 Cel

PNP

2.5 W

Other Transistors

YES

NDS9407-G by Fairchild Semiconductor

NDS9407-G

Fairchild Semiconductor

Fairchild Semiconductor's NDS9407-G is a P-CHANNEL FET with 3A max drain current and 2.5W power dissipation. Ideal for applications requiring single-channel enhancement mode transistors, it operates at up to 175°C, making it suitable for high-temperature environments.

SINGLE

3 A

3 A

METAL-OXIDE SEMICONDUCTOR

e3

1

1

ENHANCEMENT MODE

175 Cel

260

P-CHANNEL

2.5 W

Other Transistors

YES

MATTE TIN

30

FW907-TL-E by Onsemi

FW907-TL-E

Onsemi

FW907-TL-E by Onsemi is a N/P-channel MOSFET with 10A max drain current and 2.5W power dissipation. It operates in enhancement mode, suitable for surface mount applications at up to 150 °C. Ideal for various electronic circuits requiring high current switching capabilities.

10 A

10 A

METAL-OXIDE SEMICONDUCTOR

e6

1

ENHANCEMENT MODE

150 Cel

N-CHANNEL AND P-CHANNEL

2.5 W

Other Transistors

YES

Tin/Bismuth (Sn/Bi)

FW705-TL-E by Onsemi

FW705-TL-E

Onsemi

FW705-TL-E by Onsemi is a P-CHANNEL FET with 6A max drain current and 2.5W power dissipation. It operates in enhancement mode, suitable for applications requiring high temperature tolerance up to 150 °C. Ideal for surface mount designs in various electronic systems.

6 A

6 A

METAL-OXIDE SEMICONDUCTOR

e6

1

ENHANCEMENT MODE

150 Cel

P-CHANNEL

2.5 W

Other Transistors

YES

TIN BISMUTH