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.5 W Other Function Transistors 10

Other Function Transistors
Part# Info Specs
Part RoHS Manufacturer Description Maximum Collector Current (IC) Configuration Minimum DC Current Gain (hFE) Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Field Effect Transistor Technology JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements Operating Mode Maximum Operating Temperature Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation (Abs) Sub-Category Surface Mount Terminal Finish Maximum Time At Peak Reflow Temperature (s) Nominal Transition Frequency (fT)
BC818K-25-E6327 by Infineon Technologies

BC818K-25-E6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .5 A; Moisture Sensitivity Level (MSL): 1;

.5 A

SINGLE

160

1

1

150 Cel

260

NPN

.5 W

Other Transistors

YES

BC818K-40-E6327 by Infineon Technologies

BC818K-40-E6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .5 A; Moisture Sensitivity Level (MSL): 1;

.5 A

SINGLE

250

1

1

150 Cel

260

NPN

.5 W

Other Transistors

YES

FDN360P-NBGT003B by Fairchild Semiconductor

FDN360P-NBGT003B

Fairchild Semiconductor

FDN360P-NBGT003B by Fairchild Semiconductor is a P-CHANNEL transistor with 2A max drain current and 0.5W power dissipation. It operates in enhancement mode, suitable for surface mount applications. Ideal for circuits requiring high efficiency and low power consumption in temperatures up to 150°C.

SINGLE

2 A

2 A

METAL-OXIDE SEMICONDUCTOR

e3

1

1

ENHANCEMENT MODE

150 Cel

260

P-CHANNEL

.5 W

Other Transistors

YES

Tin (Sn)

30

BFR540,235 by NXP Semiconductors

BFR540,235

NXP Semiconductors

BFR540,235 by NXP Semiconductors is an NPN transistor designed for surface mount applications. It features a max power dissipation of 0.5W, a min DC current gain (hFE) of 60, and operates up to 150 °C. Ideal for amplifying signals in various electronic circuits.

.12 A

SINGLE

60

e3

1

1

150 Cel

260

NPN

.5 W

Other Transistors

YES

TIN

30

BFG25AW/X,115 by NXP Semiconductors

BFG25AW/X,115

NXP Semiconductors

BFG25AW/X,115 by NXP Semiconductors is a single NPN transistor ideal for high-frequency applications. It features a max power dissipation of 0.5 W, an hFE of 50, and operates up to 175 °C. This versatile component is perfect for RF amplification in compact designs.

.0065 A

SINGLE

50

1

175 Cel

NPN

.5 W

Other Transistors

YES

3500 MHz

BFG540W/XR,135 by NXP Semiconductors

BFG540W/XR,135

NXP Semiconductors

BFG540W/XR,135 from NXP Semiconductors is a single NPN transistor ideal for RF applications. It features a max power dissipation of 0.5 W, a min DC current gain (hFE) of 100, and operates up to 175 °C. Perfect for surface mount designs in communication devices.

.12 A

SINGLE

100

1

175 Cel

NPN

.5 W

Other Transistors

YES

SSM6J206FE(TE85L,F) by Toshiba

SSM6J206FE(TE85L,F)

Toshiba

P-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (Abs) (ID): 2 A;

SINGLE

2 A

2 A

METAL-OXIDE SEMICONDUCTOR

1

ENHANCEMENT MODE

150 Cel

P-CHANNEL

.5 W

Other Transistors

YES

SSM6L11TU(TE85L,F) by Toshiba

SSM6L11TU(TE85L,F)

Toshiba

N-CHANNEL AND P-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Drain Current (ID): .5 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: ENHANCEMENT MODE;

.5 A

.5 A

METAL-OXIDE SEMICONDUCTOR

ENHANCEMENT MODE

150 Cel

N-CHANNEL AND P-CHANNEL

.5 W

Other Transistors

YES

PH2369,126 by NXP Semiconductors

PH2369,126

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .2 A;

.2 A

SINGLE

40

1

150 Cel

NPN

.5 W

Other Transistors

NO

500 MHz

PN2369A,126 by NXP Semiconductors

PN2369A,126

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 500 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .2 A;

.2 A

SINGLE

40

1

150 Cel

NPN

.5 W

Other Transistors

NO

500 MHz