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50 W Insulated Gate Bipolar Transistors (IGBT) 4

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STGDL6NC60DIT4 by STMicroelectronics

STGDL6NC60DIT4

STMicroelectronics

STGDL6NC60DIT4 by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 13A max collector current, and 50W max power dissipation. Ideal for power control applications due to its fast turn-off time of 122ns and built-in diode configuration.

13 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-252

R-PSSO-G2

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

NOT SPECIFIED

N-CHANNEL

50 W

Not Qualified

Insulated Gate BIP Transistors

YES

GULL WING

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

122 ns

10.5 ns

STGDL6NC60DT4 by STMicroelectronics

STGDL6NC60DT4

STMicroelectronics

STGDL6NC60DT4 by STMicroelectronics is an N-channel IGBT designed for power control applications. It features a max collector-emitter voltage of 600V, a nominal turn-off time of 122ns, and operates at up to 150 °C. Its compact surface mount design ensures efficient thermal management.

13 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-252AA

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

50 W

Not Qualified

Insulated Gate BIP Transistors

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

POWER CONTROL

SILICON

122 ns

10.5 ns

STGD3NB60HDT4 by STMicroelectronics

STGD3NB60HDT4

STMicroelectronics

STGD3NB60HDT4 from STMicroelectronics is an N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600V, power dissipation of 50W, and fast switching times (ton: 25ns, toff: 168ns). This compact device ensures efficient performance in demanding environments.

10 A

600 V

SINGLE WITH BUILT-IN DIODE

5 V

20 V

TO-252AA

R-PSSO-G2

e3

1

1

2

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

N-CHANNEL

50 W

Not Qualified

Insulated Gate BIP Transistors

YES

MATTE TIN

GULL WING

SINGLE

MOTOR CONTROL

SILICON

168 ns

25 ns

STGF30H65DFB2 by STMicroelectronics

STGF30H65DFB2

STMicroelectronics

STGF30H65DFB2 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 2.1V, supports up to 50A collector current, and operates at temperatures from -55 °C to 175 °C. Ideal for high-performance switching in industrial systems.

ISOLATED

50 A

650 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-220AB

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

50 W

NO

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

184 ns

27.5 ns

2.1 V