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400 W Insulated Gate Bipolar Transistors (IGBT) 3

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
FMG1G100US60L by Fairchild Semiconductor

FMG1G100US60L

Fairchild Semiconductor

FMG1G100US60L by Fairchild Semiconductor is an N-CHANNEL IGBT with 600V VCEsat, 100A IC, and 2.8V VCE. Ideal for MOTOR CONTROL applications, it has a toff of 320ns and ton of 85ns. The package style is FLANGE MOUNT with PLASTIC/EPOXY body material and SILICON element.

LOW CONDUCTION LOSS

ISOLATED

100 A

600 V

SINGLE WITH BUILT-IN DIODE

20 V

R-PUFM-X7

1

7

125 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

400 W

Not Qualified

Insulated Gate BIP Transistors

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

MOTOR CONTROL

SILICON

320 ns

85 ns

2.8 V

AFGHL40T120RHD by Onsemi

AFGHL40T120RHD

Onsemi

AFGHL40T120RHD by Onsemi is an N-CHANNEL IGBT with VCEsat of 2.4V and IC of 48A, ideal for POWER CONTROL applications. It has a max VCE of 1200V, operating temperature range from -55 to 175 °C, and turn-off time of 230ns. The package style is FLANGE MOUNT with through-hole terminals in a RECTANGULAR shape.

COLLECTOR

48 A

1200 V

SINGLE WITH BUILT-IN DIODE

7.3 V

20 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

400 W

AEC-Q101

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

230 ns

66 ns

2.4 V

AFGHL25T120RLD by Onsemi

AFGHL25T120RLD

Onsemi

AFGHL25T120RLD by Onsemi is an N-CHANNEL IGBT with 1200V VCEsat, 48A IC, and 400W Pd. Ideal for power control applications, it features a single configuration with built-in diode and operates b/w -55 to 175 °C.

COLLECTOR

48 A

1200 V

SINGLE WITH BUILT-IN DIODE

7.1 V

20 V

TO-247

R-PSFM-T3

e3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

400 W

AEC-Q101

NO

Matte Tin (Sn) - annealed

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

205 ns

43.2 ns

2 V