Loading...

259 W Insulated Gate Bipolar Transistors (IGBT) 6

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STGWT20IH125DF by STMicroelectronics

STGWT20IH125DF

STMicroelectronics

STGWT20IH125DF from STMicroelectronics is a high-performance N-channel IGBT ideal for power applications. It features a max VCEsat of 2.5V, 1250V collector-emitter voltage, and handles up to 40A current. Its robust design suits industrial motor drives and renewable energy systems.

COLLECTOR

40 A

1250 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

259 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

SILICON

285 ns

2.5 V

STGW15M120DF3 by STMicroelectronics

STGW15M120DF3

STMicroelectronics

STGW15M120DF3 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 2.3V, supports up to 1200V collector-emitter voltage, and has a max power dissipation of 259W. Ideal for high-performance switching in industrial systems.

COLLECTOR

30 A

1200 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

259 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

406 ns

39 ns

2.3 V

STGWA15M120DF3 by STMicroelectronics

STGWA15M120DF3

STMicroelectronics

STGWA15M120DF3 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max VCEsat of 2.3V, supports up to 1200V collector-emitter voltage, and has a max power dissipation of 259W. Ideal for high-performance switching in industrial systems.

COLLECTOR

30 A

1200 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

259 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

406 ns

39 ns

2.3 V

STGW15S120DF3 by STMicroelectronics

STGW15S120DF3

STMicroelectronics

STGW15S120DF3 IGBT from STMicroelectronics features a max VCEsat of 2.05V and supports power control applications with a collector current of up to 30A. It operates efficiently in temperatures ranging from -55 °C to 175 °C. This single-channel device is ideal for high-power switching tasks.

COLLECTOR

30 A

1200 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

259 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

584 ns

31.2 ns

2.05 V

STGWA15S120DF3 by STMicroelectronics

STGWA15S120DF3

STMicroelectronics

STGWA15S120DF3 from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max VCEsat of 2.05V, supports up to 1200V collector-emitter voltage, and operates at temperatures from -55 °C to 175 °C. Ideal for high-performance applications, it ensures reliable operation with a built-in diode.

COLLECTOR

30 A

1200 V

SINGLE WITH BUILT-IN DIODE

7 V

20 V

TO-247

R-PSFM-T3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

259 W

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

584 ns

31.2 ns

2.05 V

STGWA15H120DF2 by STMicroelectronics

STGWA15H120DF2

STMicroelectronics

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 259 W; Maximum Collector Current (IC): 30 A; Maximum Collector-Emitter Voltage: 1200 V; Maximum Operating Temperature: 175 Cel;

30 A

1200 V

7 V

20 V

175 Cel

NOT SPECIFIED

N-CHANNEL

259 W

Insulated Gate BIP Transistors

NO

NOT SPECIFIED