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186 W Insulated Gate Bipolar Transistors (IGBT) 4

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NXH100B120H3Q0PTG by Onsemi

NXH100B120H3Q0PTG

Onsemi

NXH100B120H3Q0PTG by Onsemi is an N-CHANNEL IGBT with 2 elements, built-in diode, and thermistor. It has a max VCEsat of 2.3V and can handle up to 50A collector current. Ideal for power control applications due to its high power dissipation of 186W and operating temperature range from -40 °C to 150°C.

RC-IGBT

ISOLATED

50 A

1200 V

COMMON COLLECTOR, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

6.5 V

20 V

R-XUFM-X22

2

22

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

186 W

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

291 ns

61 ns

2.3 V

NXH100B120H3Q0SG by Onsemi

NXH100B120H3Q0SG

Onsemi

NXH100B120H3Q0SG by Onsemi is an N-CHANNEL IGBT with 2 elements, diode, and thermistor. It has a VCEsat of 2.3V, IC of 50A, and Pmax of 186W. Ideal for power control applications due to its fast ton of 61ns and toff of 291ns at temperatures ranging from -40 °C to +150°C.

RC-IGBT

ISOLATED

50 A

1200 V

COMMON COLLECTOR, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

6.5 V

20 V

R-XUFM-X22

2

22

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

186 W

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

291 ns

61 ns

2.3 V

NXH100B120H3Q0STG by Onsemi

NXH100B120H3Q0STG

Onsemi

NXH100B120H3Q0STG by Onsemi is an N-CHANNEL IGBT with 2 elements, built-in diode, and thermistor. It has a max VCEsat of 2.3V and can handle up to 50A collector current. Ideal for power control applications due to its high power dissipation of 186W and operating temperature range from -40 °C to 150°C.

RC-IGBT

ISOLATED

50 A

1200 V

COMMON COLLECTOR, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

6.5 V

20 V

R-XUFM-X22

e3

2

22

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

186 W

NO

Matte Tin (Sn) - annealed

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

291 ns

61 ns

2.3 V

NXH100B120H3Q0PG by Onsemi

NXH100B120H3Q0PG

Onsemi

N-CHANNEL; Configuration: COMMON COLLECTOR, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Power Dissipation (Abs): 186 W; Maximum Collector Current (IC): 50 A; Maximum Collector-Emitter Voltage: 1200 V;

RC-IGBT

ISOLATED

50 A

1200 V

COMMON COLLECTOR, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

6.5 V

20 V

R-XUFM-X22

2

22

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

186 W

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

291 ns

61 ns

2.3 V