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176 W Insulated Gate Bipolar Transistors (IGBT) 3

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STGB35N35LZ-1 by STMicroelectronics

STGB35N35LZ-1

STMicroelectronics

STGB35N35LZ-1 from STMicroelectronics is an N-channel IGBT ideal for power control applications. It features a max collector-emitter voltage of 380V, a power dissipation of 176W, and operates at up to 175 °C. Its built-in diode enhances efficiency in various electronic circuits.

VOLTAGE CLAMPING

COLLECTOR

40 A

380 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

2.3 V

12 V

TO-262AA

R-PSIP-T3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

IN-LINE

NOT SPECIFIED

N-CHANNEL

176 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

37000 ns

7600 ns

STGB35N35LZT4 by STMicroelectronics

STGB35N35LZT4

STMicroelectronics

STGB35N35LZT4 from STMicroelectronics is an N-channel IGBT ideal for power control applications. It features a max collector-emitter voltage of 380V, 40A collector current, and operates at up to 175 °C. Its compact design ensures efficient performance in surface mount configurations.

VOLTAGE CLAMPING

COLLECTOR

40 A

380 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

2.3 V

12 V

TO-263AA

R-PDSO-G2

e3

1

1

2

175 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

245

N-CHANNEL

176 W

Not Qualified

Insulated Gate BIP Transistors

YES

MATTE TIN

GULL WING

DUAL

30

POWER CONTROL

SILICON

37000 ns

7600 ns

STGP35N35LZ by STMicroelectronics

STGP35N35LZ

STMicroelectronics

STGP35N35LZ from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 380V, 40A collector current, and operates at up to 175 °C. Ideal for high-performance switching in industrial systems.

VOLTAGE CLAMPING

COLLECTOR

40 A

380 V

SINGLE WITH BUILT-IN DIODE AND RESISTOR

2.3 V

12 V

TO-220AB

R-PSFM-T3

e3

1

3

175 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

176 W

Not Qualified

Insulated Gate BIP Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

37000 ns

7600 ns