Loading...

950 A Insulated Gate Bipolar Transistors (IGBT) 8

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
FF600R17ME4BOSA1 by Infineon Technologies

FF600R17ME4BOSA1

Infineon Technologies

Infineon Technologies' FF600R17ME4BOSA1 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements. It has a max voltage of 1700V and max current of 950A, suitable for POWER CONTROL applications. With a toff of 980ns and ton of 320ns, it offers efficient switching in RECTANGULAR package style.

ISOLATED

950 A

1700 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X11

2

11

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

980 ns

320 ns

FD600R17KE3B2NOSA1 by Infineon Technologies

FD600R17KE3B2NOSA1

Infineon Technologies

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 950 A; Case Connection: ISOLATED; Package Style (Meter): FLANGE MOUNT;

ISOLATED

950 A

1700 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X10

1

2

10

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

1900 ns

900 ns

FD600R17KE3KB5NOSA1 by Infineon Technologies

FD600R17KE3KB5NOSA1

Infineon Technologies

Insulated Gate Bipolar Transistors; Maximum Power Dissipation (Abs): 4300 W; Maximum Collector Current (IC): 950 A; Maximum Gate-Emitter Voltage: 20 V; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum VCEsat: 2.45 V;

950 A

1700 V

20 V

1

125 Cel

NOT SPECIFIED

4300 W

Insulated Gate BIP Transistors

NOT SPECIFIED

2.45 V

FF600R17KE3B2NOSA1 by Infineon Technologies

FF600R17KE3B2NOSA1

Infineon Technologies

N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 950 A; Package Shape: RECTANGULAR; Moisture Sensitivity Level (MSL): 1;

ISOLATED

950 A

1700 V

SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X10

1

2

10

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

NO

UNSPECIFIED

UPPER

POWER CONTROL

SILICON

1900 ns

900 ns

FF600R17ME4B11BOSA1 by Infineon Technologies

FF600R17ME4B11BOSA1

Infineon Technologies

Infineon Technologies' FF600R17ME4B11BOSA1 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. Ideal for POWER CONTROL applications with VCEsat of 2.3V and IC of 950A. Operates at -40 to 150 °C, UL APPROVED for reliability in high-power systems.

ISOLATED

950 A

1700 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

6.4 V

20 V

R-XUFM-X11

2

11

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

4050 W

UL APPROVED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

980 ns

320 ns

2.3 V

FF600R12ME4AB11BOSA1 by Infineon Technologies

FF600R12ME4AB11BOSA1

Infineon Technologies

Infineon Technologies' FF600R12ME4AB11BOSA1 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, ideal for POWER CONTROL applications. Featuring a Max VCEsat of 2.1V and Max Collector-Emitter Voltage of 1200V, it offers high power dissipation up to 3350W. With fast turn-off time (toff) of 620ns and turn-on time (ton) of 230ns, this UL RECOGNIZED transistor operates b/w -40°C to 150°C efficiently.

ISOLATED

950 A

1200 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

6.4 V

20 V

R-XUFM-X11

2

11

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

3350 W

UL RECOGNIZED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

620 ns

230 ns

2.1 V

FF600R17ME4PBOSA1 by Infineon Technologies

FF600R17ME4PBOSA1

Infineon Technologies

FF600R17ME4PBOSA1 by Infineon Technologies is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. It has a max collector-emitter voltage of 1700V and can handle a max collector current of 950A. Ideal for power control applications due to its fast turn on time of 320ns and turn off time of 980ns.

ISOLATED

950 A

1700 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X11

2

11

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

980 ns

320 ns

FF600R17ME4PB11BOSA1 by Infineon Technologies

FF600R17ME4PB11BOSA1

Infineon Technologies

Infineon Technologies' FF600R17ME4PB11BOSA1 is a N-CHANNEL IGBT with 2 SERIES CONNECTED elements, built-in diode, and thermistor. It has a max voltage of 1700V and max current of 950A for POWER CONTROL applications. Featuring a toff of 980ns and ton of 320ns, this rectangular package transistor is ideal for high-power systems.

ISOLATED

950 A

1700 V

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X11

2

11

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

980 ns

320 ns