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90 A Insulated Gate Bipolar Transistors (IGBT) 8

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
NGTB45N60SWG by Onsemi

NGTB45N60SWG

Onsemi

N-CHANNEL; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 90 A; Maximum Gate-Emitter Threshold Voltage: 6.5 V; Maximum Gate-Emitter Voltage: 20 V;

90 A

600 V

6.5 V

20 V

e3

150 Cel

N-CHANNEL

250 W

Insulated Gate BIP Transistors

NO

MATTE TIN

STGW45NC60WD by STMicroelectronics

STGW45NC60WD

STMicroelectronics

STGW45NC60WD by STMicroelectronics is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 90A max collector current, and 285W max power dissipation. Ideal for power control applications due to its single configuration with built-in diode and fast turn-off time of 280ns.

90 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-247AC

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

285 W

Not Qualified

Insulated Gate BIP Transistors

NO

Matte Tin (Sn)

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

280 ns

46 ns

STGE50NC60VD by STMicroelectronics

STGE50NC60VD

STMicroelectronics

STGE50NC60VD by STMicroelectronics is an N-CHANNEL IGBT with VCEsat of 2.5V, IC of 90A, and Pmax of 260W. Ideal for power control applications due to its fast turn-off time (toff) of 247ns and turn-on time (ton) of 61ns. Operates at a max temperature of 150°C with a collector-emitter voltage rating of 600V.

ISOLATED

90 A

600 V

SINGLE WITH BUILT-IN DIODE

20 V

R-XUFM-X4

1

4

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

260 W

Not Qualified

Insulated Gate BIP Transistors

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

247 ns

61 ns

2.5 V

STGW45NC60VD by STMicroelectronics

STGW45NC60VD

STMicroelectronics

STGW45NC60VD from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control applications. It features a max collector-emitter voltage of 600 V, 90 A collector current, and a fast turn-off time of 366 ns. Ideal for high-performance switching in industrial systems.

90 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-247

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

270 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

366 ns

46 ns

STGP100N30 by STMicroelectronics

STGP100N30

STMicroelectronics

STMicroelectronics' STGP100N30 is an N-CHANNEL IGBT with 330V VCE, 90A IC, and 250W Ptot. Ideal for general purpose switching applications due to its fast 310ns turn-off time and max operating temp of 150°C. Package style is flange mount with through-hole terminals.

90 A

330 V

SINGLE

5.5 V

20 V

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

250 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

GENERAL PURPOSE SWITCHING

SILICON

310 ns

NGTB45N60S2WG by Onsemi

NGTB45N60S2WG

Onsemi

NGTB45N60S2WG by Onsemi is an N-CHANNEL IGBT with a Max VCEsat of 2.3V and Max IC of 90A. Ideal for POWER CONTROL applications, it has a Max VCE of 600V and can operate in temperatures ranging from -55 to 175 °C.

90 A

600 V

SINGLE WITH BUILT-IN DIODE

6.5 V

20 V

TO-247AD

R-PSFM-T3

e3

1

3

175 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

300 W

NO

Tin (Sn)

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

232 ns

2.3 V

IKZ75N65EH5XKSA1 by Infineon Technologies

IKZ75N65EH5XKSA1

Infineon Technologies

Infineon IKZ75N65EH5XKSA1 is an N-CHANNEL IGBT with VCEsat of 2.1V, IC of 90A, and Ptot of 395W. Ideal for POWER CONTROL applications due to its fast ton of 37ns and low toff of 415ns. Operates in temperatures from -40°C to 175°C, making it suitable for various industrial power systems.

COLLECTOR

90 A

650 V

SINGLE WITH BUILT-IN DIODE

4.8 V

20 V

R-PSFM-T4

e3

1

4

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

395 W

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

415 ns

37 ns

2.1 V

IKZ75N65NH5XKSA1 by Infineon Technologies

IKZ75N65NH5XKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 90 A; Terminal Form: THROUGH-HOLE; Package Body Material: PLASTIC/EPOXY;

COLLECTOR

90 A

650 V

SINGLE WITH BUILT-IN DIODE

R-PSFM-T4

e3

1

4

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

485 ns

71 ns