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55 A Insulated Gate Bipolar Transistors (IGBT) 13

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
FS35R12KE3GBOSA1 by Infineon Technologies

FS35R12KE3GBOSA1

Infineon Technologies

N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 55 A; JESD-30 Code: R-XUFM-X28; Terminal Form: UNSPECIFIED;

ISOLATED

55 A

1200 V

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X28

6

28

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

610 ns

140 ns

FP40R12KT3GBOSA1 by Infineon Technologies

FP40R12KT3GBOSA1

Infineon Technologies

FP40R12KT3GBOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 7 elements, 35 terminals, and a max collector-emitter voltage of 1200V. It has a nominal turn off time of 610ns and a max collector current of 55A. This complex configuration transistor is commonly used in applications requiring high power switching capabilities at temperatures up to 150°C.

ISOLATED

55 A

1200 V

COMPLEX

R-XUFM-X35

7

35

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

610 ns

140 ns

FP40R12KE3GBOSA1 by Infineon Technologies

FP40R12KE3GBOSA1

Infineon Technologies

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 55 A; Transistor Element Material: SILICON; No. of Terminals: 35;

ISOLATED

55 A

1200 V

COMPLEX

R-XUFM-X35

7

35

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

610 ns

135 ns

FP40R12KE3BOSA1 by Infineon Technologies

FP40R12KE3BOSA1

Infineon Technologies

FP40R12KE3BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 1200V max collector-emitter voltage, 55A max collector current, and 610ns nominal turn off time. It is used for power control applications due to its complex configuration and silicon transistor element material. The package style is flange mount with a rectangular shape and wire terminals.

ISOLATED

55 A

1200 V

COMPLEX

R-XUFM-W24

7

24

175 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

WIRE

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

610 ns

140 ns

FP40R12KT3BOSA1 by Infineon Technologies

FP40R12KT3BOSA1

Infineon Technologies

FP40R12KT3BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with a max collector-emitter voltage of 1200V and a max collector current of 55A. It has a nominal turn-off time of 610ns and is commonly used in applications requiring high power switching, such as motor drives and inverters.

ISOLATED

55 A

1200 V

COMPLEX

R-XUFM-X24

7

24

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

610 ns

140 ns

FS35R12KT3BOSA1 by Infineon Technologies

FS35R12KT3BOSA1

Infineon Technologies

N-CHANNEL; Configuration: BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 55 A; Package Body Material: UNSPECIFIED; No. of Elements: 6;

ISOLATED

55 A

1200 V

BRIDGE, 6 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X28

6

28

150 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

SILICON

610 ns

140 ns

STGP30NC60S by STMicroelectronics

STGP30NC60S

STMicroelectronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 175 W; Maximum Collector Current (IC): 55 A; Package Shape: RECTANGULAR;

COLLECTOR

55 A

600 V

SINGLE

5.75 V

20 V

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

175 W

Not Qualified

Insulated Gate BIP Transistors

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

POWER CONTROL

SILICON

555 ns

30 ns

STGWS38IH130D by STMicroelectronics

STGWS38IH130D

STMicroelectronics

STGWS38IH130D from STMicroelectronics is a powerful N-channel IGBT designed for efficient power control. It features a max collector-emitter voltage of 1300 V, a nominal turn-off time of 740 ns, and can handle up to 180 W dissipation. Ideal for high-temperature applications with a max operating temp of 150 °C.

55 A

1300 V

SINGLE WITH BUILT-IN DIODE

5.75 V

25 V

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

180 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

740 ns

FS50R06YL4BOMA1 by Infineon Technologies

FS50R06YL4BOMA1

Infineon Technologies

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 55 A; Case Connection: ISOLATED; JESD-30 Code: R-XUFM-X23;

ISOLATED

55 A

600 V

COMPLEX

R-XUFM-X23

6

23

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

160 ns

55 ns

IGP30N65F5XKSA1 by Infineon Technologies

IGP30N65F5XKSA1

Infineon Technologies

Infineon's IGP30N65F5XKSA1 is an N-CHANNEL IGBT transistor with 650V max collector-emitter voltage and 55A max collector current. Ideal for power control applications, it has a single configuration, 206ns turn-off time, and 28ns turn-on time. Package style is flange mount with through-hole terminals in a rectangular shape.

COLLECTOR

55 A

650 V

SINGLE

TO-220AB

R-PSFM-T3

e3

1

3

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

206 ns

28 ns

IKP30N65F5XKSA1 by Infineon Technologies

IKP30N65F5XKSA1

Infineon Technologies

IKP30N65F5XKSA1 by Infineon is an N-CHANNEL IGBT with 650V max collector-emitter voltage and 55A max collector current. Ideal for power control applications, it has a single configuration with built-in diode and a nominal turn-off time of 206ns.

COLLECTOR

55 A

650 V

SINGLE WITH BUILT-IN DIODE

TO-220AB

R-PSFM-T3

e3

1

3

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

206 ns

28 ns

IKP30N65H5XKSA1 by Infineon Technologies

IKP30N65H5XKSA1

Infineon Technologies

IKP30N65H5XKSA1 by Infineon Technologies is an N-CHANNEL IGBT with 650V max collector-emitter voltage, 55A max collector current, and 224ns turn-off time. Ideal for power control applications due to its single configuration with built-in diode and silicon transistor element material. Suitable for use in various systems requiring efficient power management.

COLLECTOR

55 A

650 V

SINGLE WITH BUILT-IN DIODE

TO-220AB

R-PSFM-T3

e3

1

3

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

224 ns

28 ns

F450R07W1H3B11ABOMA1 by Infineon Technologies

F450R07W1H3B11ABOMA1

Infineon Technologies

N-CHANNEL; Configuration: COMPLEX; Surface Mount: NO; Maximum Collector Current (IC): 55 A; Nominal Turn On Time (ton): 32 ns; JESD-30 Code: R-XUFM-X20;

ISOLATED

55 A

650 V

COMPLEX

R-XUFM-X20

4

20

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

UL RECOGNIZED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

203 ns

32 ns