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36 A Insulated Gate Bipolar Transistors (IGBT) 4

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STGFW35HF60W by STMicroelectronics

STGFW35HF60W

STMicroelectronics

STMicroelectronics' STGFW35HF60W is an N-CHANNEL IGBT with 88W power dissipation, 600V collector-emitter voltage, and 36A collector current. Ideal for high-power applications requiring efficient switching capabilities in industrial equipment and motor drives.

36 A

600 V

5.75 V

20 V

150 Cel

N-CHANNEL

88 W

Insulated Gate BIP Transistors

NO

STGFW30NC60V by STMicroelectronics

STGFW30NC60V

STMicroelectronics

STMicroelectronics' STGFW30NC60V is an N-CHANNEL IGBT with 600V VCE, 36A IC, and 80W Pd. Ideal for high-power applications requiring efficient switching at up to 150 °C operating temperature.

36 A

600 V

5.75 V

20 V

150 Cel

N-CHANNEL

80 W

Insulated Gate BIP Transistors

NO

SGP20N60HSXKSA1 by Infineon Technologies

SGP20N60HSXKSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Collector Current (IC): 36 A; No. of Elements: 1; Package Style (Meter): FLANGE MOUNT;

COLLECTOR

36 A

600 V

SINGLE

TO-220AB

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

MOTOR CONTROL

SILICON

235 ns

30 ns

SGW20N60HSFKSA1 by Infineon Technologies

SGW20N60HSFKSA1

Infineon Technologies

Infineon's SGW20N60HSFKSA1 is an N-CHANNEL IGBT with 600V max collector-emitter voltage, 36A max collector current, and 30ns turn on time. Ideal for motor control applications due to its single configuration and through-hole terminals. Operating at up to 150°C, it offers a fast switching speed of 235ns.

COLLECTOR

36 A

600 V

SINGLE

TO-247AC

R-PSFM-T3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

Not Qualified

NO

THROUGH-HOLE

SINGLE

NOT SPECIFIED

MOTOR CONTROL

SILICON

235 ns

30 ns