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21 A Insulated Gate Bipolar Transistors (IGBT) 3

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
STGP10NC60S by STMicroelectronics

STGP10NC60S

STMicroelectronics

STGP10NC60S from STMicroelectronics is an N-channel IGBT ideal for motor control applications. It features a max collector-emitter voltage of 600V, a power dissipation of 62.5W, and operates at up to 150 °C. Its fast switching times enhance efficiency in various circuits.

21 A

600 V

SINGLE WITH BUILT-IN DIODE

5.75 V

20 V

TO-220AB

R-PSFM-T3

e3

1

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

62.5 W

Not Qualified

Insulated Gate BIP Transistors

NO

MATTE TIN

THROUGH-HOLE

SINGLE

MOTOR CONTROL

SILICON

560 ns

22.5 ns

FGD2736G3-F085 by Onsemi

FGD2736G3-F085

Onsemi

Onsemi's FGD2736G3-F085 is an N-CHANNEL IGBT with built-in TVS diode and resistor, ideal for automotive ignition applications. It has a max VCEsat of 1.65V, collector current of 21A, and can operate in temperatures ranging from -40 to 175 °C. This surface-mount transistor features a rectangular package shape with gull wing terminals.

COLLECTOR

21 A

360 V

SINGLE WITH BUILT-IN TVS DIODE AND RESISTOR

15000 ns

2.2 V

10 V

TO-252AA

R-PSSO-G2

e3

1

1

2

175 Cel

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

N-CHANNEL

150 W

7000 ns

YES

Matte Tin (Sn) - annealed

GULL WING

SINGLE

30

AUTOMOTIVE IGNITION

SILICON

30000 ns

6300 ns

11000 ns

3900 ns

1.65 V

RGT50TM65DGC9 by ROHM

RGT50TM65DGC9

ROHM

ROHM's RGT50TM65DGC9 is an N-CHANNEL IGBT with 650V VCE, 21A IC, and 65ns ton. Ideal for POWER CONTROL applications due to its single configuration with built-in diode and fast turn-off time of 210ns. Package style is FLANGE MOUNT with PLASTIC/EPOXY body material.

ISOLATED

21 A

650 V

SINGLE WITH BUILT-IN DIODE

TO-220AB

R-PSFM-T3

e3

1

3

-40 Cel

PLASTIC/EPOXY

RECTANGULAR

FLANGE MOUNT

N-CHANNEL

NO

TIN

THROUGH-HOLE

SINGLE

POWER CONTROL

SILICON

210 ns

65 ns