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COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE Insulated Gate Bipolar Transistors (IGBT) 9

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
FF200R12KT3EHOSA1 by Infineon Technologies

FF200R12KT3EHOSA1

Infineon Technologies

Infineon Technologies' FF200R12KT3EHOSA1 is an N-CHANNEL IGBT with 2 elements and built-in diode. It has a max collector-emitter voltage of 1200V, collector current of 580A, and turn-off time of 680ns. Ideal for power control applications due to its common emitter configuration and UL recognized standard.

ISOLATED

580 A

1200 V

COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X7

2

7

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

UL RECOGNIZED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

680 ns

215 ns

FF300R12KT3EHOSA1 by Infineon Technologies

FF300R12KT3EHOSA1

Infineon Technologies

FF300R12KT3EHOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 elements and built-in diode. It has a max collector-emitter voltage of 1200V, collector current of 480A, and turn-off time of 680ns. Commonly used in power control applications due to its UL recognized reference standard and isolated case connection.

ISOLATED

480 A

1200 V

COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X7

2

7

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

UL RECOGNIZED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

680 ns

215 ns

FF400R12KT3EHOSA1 by Infineon Technologies

FF400R12KT3EHOSA1

Infineon Technologies

N-CHANNEL; Configuration: COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 580 A; No. of Terminals: 7; Terminal Form: UNSPECIFIED;

ISOLATED

580 A

1200 V

COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X7

2

7

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

UL RECOGNIZED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

680 ns

215 ns

MG12150S-DEN2MM by Littelfuse

MG12150S-DEN2MM

Littelfuse

N-CHANNEL; Configuration: COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Collector Current (IC): 200 A; Nominal Turn Off Time (toff): 610 ns; Maximum Gate-Emitter Voltage: 20 V;

ISOLATED

200 A

1200 V

COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE

6.5 V

20 V

R-XUFM-X7

2

7

125 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

UL RECOGNIZED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

610 ns

340 ns

FF300R12KT3PEHOSA1 by Infineon Technologies

FF300R12KT3PEHOSA1

Infineon Technologies

N-CHANNEL; Configuration: COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Maximum VCEsat: 2.15 V; Maximum Collector-Emitter Voltage: 1200 V; Case Connection: ISOLATED;

ISOLATED

1200 V

COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE

6.5 V

20 V

R-XUFM-X7

2

7

125 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

680 ns

215 ns

2.15 V

FF400R12KT3PEHOSA1 by Infineon Technologies

FF400R12KT3PEHOSA1

Infineon Technologies

N-CHANNEL; Configuration: COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: NO; Reference Standard: UL APPROVED; Package Style (Meter): FLANGE MOUNT; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

ISOLATED

1200 V

COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X7

2

7

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

UL APPROVED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

680 ns

215 ns

FF400R17KE4EHOSA1 by Infineon Technologies

FF400R17KE4EHOSA1

Infineon Technologies

FF400R17KE4EHOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 elements and built-in diode. It has a max VCEsat of 2.3V, ideal for power control applications. With a max operating temperature of 150°C and collector-emitter voltage of 1700V, it offers efficient performance in high-power systems.

ISOLATED

1700 V

COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE

6.25 V

20 V

R-XUFM-X7

2

7

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

850 ns

320 ns

2.3 V

FF450R12KE4EHOSA1 by Infineon Technologies

FF450R12KE4EHOSA1

Infineon Technologies

FF450R12KE4EHOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 elements and built-in diode. It has a max collector-emitter voltage of 1200V, collector current of 520A, and turn-off time of 800ns. Ideal for power control applications, this transistor operates at temperatures as low as -40°C and is UL approved.

ISOLATED

520 A

1200 V

COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X7

2

7

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

UL APPROVED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

800 ns

325 ns

FF600R12KE4EBOSA1 by Infineon Technologies

FF600R12KE4EBOSA1

Infineon Technologies

FF600R12KE4EBOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 2 elements, built-in diode, and a max voltage of 1200V. It has a turn-off time of 630ns and turn-on time of 232ns, making it ideal for power control applications. This UL approved transistor operates from -40°C with a common emitter configuration in a rectangular package style.

ISOLATED

1200 V

COMMON EMITTER, 2 ELEMENTS WITH BUILT-IN DIODE

R-XUFM-X7

2

7

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

UL APPROVED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

630 ns

232 ns