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BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR Insulated Gate Bipolar Transistors (IGBT) 7

Insulated Gate Bipolar Transistors (IGBT)
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Case Connection Maximum Collector Current (IC) Maximum Collector-Emitter Voltage Configuration Maximum Drain Current (Abs) (ID) Maximum Drain Current (ID) Maximum Emitter Current Field Effect Transistor Technology Maximum Fall Time (tf) Maximum Gate-Emitter Threshold Voltage Maximum Gate-Emitter Voltage Maximum Intrinsic Stand-off Ratio Minimum Intrinsic Stand-off Ratio JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) No. of Elements No. of Terminals Operating Mode Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Polarity or Channel Type Maximum Power Dissipation Ambient Maximum Power Dissipation (Abs) Qualification Reference Standard Maximum Rise Time (tr) Minimum Static Inter-Base Resistance Sub-Category Surface Mount Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Transistor Application Transistor Element Material Maximum Turn Off Time (toff) Nominal Turn Off Time (toff) Maximum Turn On Time (ton) Nominal Turn On Time (ton) Maximum VCEsat
F4100R12KS4BOSA1 by Infineon Technologies

F4100R12KS4BOSA1

Infineon Technologies

N-CHANNEL; Configuration: BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 130 A; Package Shape: RECTANGULAR; Transistor Element Material: SILICON;

ISOLATED

130 A

1200 V

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X26

4

26

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

UL RECOGNIZED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

390 ns

190 ns

F4150R12KS4BOSA1 by Infineon Technologies

F4150R12KS4BOSA1

Infineon Technologies

F4150R12KS4BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 4 elements in a bridge configuration. It has a max collector-emitter voltage of 1200V and can handle a collector current of 180A, making it ideal for power control applications. With a turn-off time of 390ns and turn-on time of 190ns, this UL RECOGNIZED transistor is designed for high-power operations.

ISOLATED

180 A

1200 V

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X26

4

26

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

UL RECOGNIZED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

390 ns

190 ns

F450R12KS4B11BOSA1 by Infineon Technologies

F450R12KS4B11BOSA1

Infineon Technologies

N-CHANNEL; Configuration: BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 70 A; Maximum Collector-Emitter Voltage: 1200 V; Nominal Turn Off Time (toff): 390 ns;

ISOLATED

70 A

1200 V

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X24

4

24

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

UL APPROVED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

390 ns

190 ns

F450R12KS4BOSA1 by Infineon Technologies

F450R12KS4BOSA1

Infineon Technologies

N-CHANNEL; Configuration: BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Maximum Collector Current (IC): 70 A; Nominal Turn On Time (ton): 190 ns; Nominal Turn Off Time (toff): 390 ns;

ISOLATED

70 A

1200 V

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X24

4

24

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

UL RECOGNIZED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

390 ns

190 ns

F475R12KS4B11BOSA1 by Infineon Technologies

F475R12KS4B11BOSA1

Infineon Technologies

F475R12KS4B11BOSA1 by Infineon Technologies is an N-CHANNEL IGBT with 4 elements in a bridge configuration. It has a max collector-emitter voltage of 1200V and a nominal turn off time of 390ns, making it ideal for power control applications. The transistor is UL approved and features a built-in diode, thermistor, and isolated case connection for efficient performance.

ISOLATED

100 A

1200 V

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

R-XUFM-X24

4

24

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

UL APPROVED

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

390 ns

190 ns

F4200R17N3E4BPSA1 by Infineon Technologies

F4200R17N3E4BPSA1

Infineon Technologies

N-CHANNEL; Configuration: BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR; Surface Mount: NO; Terminal Position: UPPER; Maximum Operating Temperature: 150 Cel; Maximum Collector-Emitter Voltage: 1700 V;

ISOLATED

1700 V

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

6.25 V

20 V

R-XUFM-X30

4

30

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

1160 ns

270 ns

2.3 V

NXH80T120L3Q0S3G by Onsemi

NXH80T120L3Q0S3G

Onsemi

NXH80T120L3Q0S3G by Onsemi is an N-CHANNEL IGBT with 4 elements in a bridge configuration. It has a max VCEsat of 2.4V and can handle up to 75A of collector current. Ideal for power control applications, it operates at temperatures ranging from -40 °C to 150°C.

ISOLATED

75 A

1200 V

BRIDGE, 4 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR

6.5 V

20 V

R-XUFM-X20

4

20

150 Cel

-40 Cel

UNSPECIFIED

RECTANGULAR

FLANGE MOUNT

NOT SPECIFIED

N-CHANNEL

188 W

NO

UNSPECIFIED

UPPER

NOT SPECIFIED

POWER CONTROL

SILICON

750 ns

98 ns

2.4 V