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VARIABLE ATTENUATOR RF/Microwave Attenuators 71

RF/Microwave Attenuators
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Nominal Attenuation Characteristic Impedance Construction Maximum Input Power (CW) Maximum Insertion Loss JESD-609 Code Mounting Feature No. of Terminals Maximum Operating Frequency Minimum Operating Frequency Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Equivalence Code Power Supplies (V) RF or Microwave Device Type Screening Level Sub-Category Maximum Supply Current Technology Terminal Finish Maximum Voltage Standing Wave Ratio
HMC941A by Analog Devices

HMC941A

Analog Devices

HMC941A by Analog Devices is a RF/Microwave Attenuator with 15.5 dB Nominal Attenuation, 27 dBm Max Input Power (CW), and 5.1 dB Max Insertion Loss. It operates b/w -55 to 85 °C and supports frequencies from 100 MHz to 30 GHz. Ideal for variable attenuation in RF/microwave applications with a characteristic impedance of 50 ohms.

15.5 dB

50 ohm

COMPONENT

27 dBm

5.1 dB

9

30000 MHz

100 MHz

85 Cel

-55 Cel

DIE OR CHIP

+-5

VARIABLE ATTENUATOR

7 mA

GAAS

HMC1018ALP4E by Analog Devices

HMC1018ALP4E

Analog Devices

HMC1018ALP4E by Analog Devices is a RF/Microwave Attenuator with 31 dB Nominal Attenuation, 26.99 dBm Max Input Power (CW), and 8 dB Max Insertion Loss. It is a VARIABLE ATTENUATOR suitable for applications requiring precise signal attenuation in the frequency range of 100 MHz to 30 GHz.

CMOS COMPATIBLE

31 dB

50 ohm

COMPONENT

26.99 dBm

8 dB

e3

30000 MHz

100 MHz

85 Cel

-40 Cel

VARIABLE ATTENUATOR

MATTE TIN

HMC273AMS10GE by Analog Devices

HMC273AMS10GE

Analog Devices

Analog Devices' HMC273AMS10GE is a RF/Microwave Attenuator with 31 dB Nominal Attenuation, 3.5 dB Max Insertion Loss, and 26.02 dBm Max Input Power. It operates b/w 700 MHz to 3800 MHz, making it ideal for signal attenuation in high-frequency applications like wireless communication systems.

31 dB

COMPONENT

26.02 dBm

3.5 dB

e3

3800 MHz

700 MHz

85 Cel

-40 Cel

VARIABLE ATTENUATOR

MATTE TIN

HMC985A by Analog Devices

HMC985A

Analog Devices

Analog Devices' HMC985A is a GAAS-based RF attenuator with 40 dB nominal attenuation, 30 dBm CW input power, and 4 dB max insertion loss. Ideal for applications requiring variable attenuation in the frequency range of 20-50 GHz.

40 dB

50 ohm

COMPONENT

30 dBm

4 dB

SURFACE MOUNT

50000 MHz

20000 MHz

85 Cel

-40 Cel

DIE OR CHIP

VARIABLE ATTENUATOR

GAAS

HMC1019ALP4E by Analog Devices

HMC1019ALP4E

Analog Devices

HMC1019ALP4E by Analog Devices is a RF/Microwave Attenuator with 15.5 dB Nominal Attenuation, 27 dBm Max Input Power (CW), and 6.5 dB Max Insertion Loss. It operates from -40 to 85 °C, has a characteristic impedance of 50 ohm, and is ideal for variable attenuation in RF/microwave applications up to 30 GHz.

CMOS COMPATIBLE

15.5 dB

50 ohm

COMPONENT

27 dBm

6.5 dB

e3

SURFACE MOUNT

24

30000 MHz

100 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC24,.16SQ,20

+-5

VARIABLE ATTENUATOR

6.5 mA

GAAS

MATTE TIN

HMC470ATCPZ-EP-PT by Analog Devices

HMC470ATCPZ-EP-PT

Analog Devices

Analog Devices' HMC470ATCPZ-EP-PT is a RF/Microwave Attenuator with 31 dB Nominal Attenuation, 25 dBm Max Input Power, and 2 dB Max Insertion Loss. Ideal for applications requiring variable attenuation in the frequency range of 100 MHz to 3 GHz.

CMOS COMPATIBLE

31 dB

50 ohm

COMPONENT

25 dBm

2 dB

SURFACE MOUNT

16

3000 MHz

100 MHz

125 Cel

-55 Cel

PLASTIC/EPOXY

LCC16,.12SQ,20

3/5

VARIABLE ATTENUATOR

HMC470ATCPZ-EP-RL7 by Analog Devices

HMC470ATCPZ-EP-RL7

Analog Devices

HMC470ATCPZ-EP-RL7 by Analog Devices is a RF/Microwave Attenuator with 31 dB Nominal Attenuation, 2 dB Max Insertion Loss, and 100 MHz to 3000 MHz Frequency Range. It is ideal for applications requiring precise signal attenuation in the range of -55 °C to 125°C, with a max input power of 25 dBm.

CMOS COMPATIBLE

31 dB

50 ohm

COMPONENT

25 dBm

2 dB

SURFACE MOUNT

16

3000 MHz

100 MHz

125 Cel

-55 Cel

PLASTIC/EPOXY

LCC16,.12SQ,20

3/5

VARIABLE ATTENUATOR

HMC939ATCPZ-EP-PT by Analog Devices

HMC939ATCPZ-EP-PT

Analog Devices

Analog Devices' HMC939ATCPZ-EP-PT is a RF attenuator with 31 dB attenuation, 27 dBm CW input power, and 8 dB insertion loss. Ideal for applications requiring variable attenuation in the frequency range of 100 MHz to 33 GHz.

31 dB

50 ohm

COMPONENT

27 dBm

8 dB

SURFACE MOUNT

24

33000 MHz

100 MHz

125 Cel

-55 Cel

PLASTIC/EPOXY

LCC24,.16SQ,20

+-5

VARIABLE ATTENUATOR

6.5 mA

HMC939ATCPZ-EP-R7 by Analog Devices

HMC939ATCPZ-EP-R7

Analog Devices

Analog Devices' HMC939ATCPZ-EP-R7 is a RF/Microwave Attenuator with 31 dB Nominal Attenuation, 27 dBm Max Input Power (CW), and 8 dB Max Insertion Loss. It operates from -55 to 125 °C, has a characteristic impedance of 50 ohm, and is ideal for variable attenuation in applications spanning from 100 MHz to 33 GHz.

31 dB

50 ohm

COMPONENT

27 dBm

8 dB

SURFACE MOUNT

24

33000 MHz

100 MHz

125 Cel

-55 Cel

PLASTIC/EPOXY

LCC24,.16SQ,20

+-5

VARIABLE ATTENUATOR

6.5 mA

HMC939ALP4ETR by Analog Devices

HMC939ALP4ETR

Analog Devices

HMC939ALP4ETR by Analog Devices is a RF/Microwave Attenuator with 31 dB Nominal Attenuation, 27 dBm Max Input Power (CW), and 8 dB Max Insertion Loss. It operates b/w -40 to 85°C, has a GAAS Technology, and supports frequencies from 100 MHz to 33 GHz. Ideal for variable attenuation in RF/microwave applications.

31 dB

50 ohm

COMPONENT

27 dBm

8 dB

SURFACE MOUNT

24

33000 MHz

100 MHz

85 Cel

-40 Cel

LCC24,.16SQ,20

+-5

VARIABLE ATTENUATOR

6.5 mA

GAAS

HMC8073LP3DE by Analog Devices

HMC8073LP3DE

Analog Devices

HMC8073LP3DE by Analog Devices is a RF attenuator with 31.5 dB attenuation and 2.2 dB insertion loss, suitable for frequencies b/w 600 MHz to 3000 MHz. It operates at temperatures from -40°C to 85°C, has a max input power of 30 dBm, and requires a 5V power supply. Ideal for applications requiring precise signal control in RF/microwave systems.

CMOS COMPATIBLE

31.5 dB

50 ohm

COMPONENT

30 dBm

2.2 dB

e4

SURFACE MOUNT

16

3000 MHz

600 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC16,.12SQ,20

5

VARIABLE ATTENUATOR

NICKEL PALLADIUM GOLD

ADRF5720BCCZN-R7 by Analog Devices

ADRF5720BCCZN-R7

Analog Devices

Analog Devices' ADRF5720BCCZN-R7 is a CMOS RF attenuator with 31.5 dB attenuation and 27.99 dBm CW input power, suitable for applications requiring variable attenuation in the frequency range of 0.009-40000 MHz. With a 50 ohm characteristic impedance, it operates at temperatures from -40 to 105°C and has a surface mount package with 24 terminals.

CMOS COMPATIBLE, I/P POWER-MAX(PEAK)=1.26W

31.5 dB

50 ohm

COMPONENT

27.99 dBm

e4

SURFACE MOUNT

24

40000 MHz

.009 MHz

105 Cel

-40 Cel

PLASTIC/EPOXY

LCC24,.16SQ,20

+-3.3

VARIABLE ATTENUATOR

CMOS

NICKEL PALLADIUM GOLD

ADRF5720BCCZN by Analog Devices

ADRF5720BCCZN

Analog Devices

Analog Devices' ADRF5720BCCZN is a CMOS RF attenuator with 31.5 dB nominal attenuation and 27.99 dBm CW input power. It operates from 0.009 MHz to 40 GHz, ideal for RF/Microwave applications requiring precise signal control in a compact surface-mount package.

CMOS COMPATIBLE, I/P POWER-MAX(PEAK)=1.26W

31.5 dB

50 ohm

COMPONENT

27.99 dBm

SURFACE MOUNT

24

40000 MHz

.009 MHz

105 Cel

-40 Cel

PLASTIC/EPOXY

LCC24,.16SQ,20

+-3.3

VARIABLE ATTENUATOR

CMOS

ADRF5721BCCZN-R7 by Analog Devices

ADRF5721BCCZN-R7

Analog Devices

VARIABLE ATTENUATOR; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Maximum Input Power (CW): 27 dBm; Package Equivalence Code: LCC16,.1SQ,16;

30 dB

50 ohm

COMPONENT

27 dBm

SURFACE MOUNT

16

40000 MHz

.009 MHz

105 Cel

-40 Cel

PLASTIC/EPOXY

LCC16,.1SQ,16

+-3.3

VARIABLE ATTENUATOR

ADRF5721BCCZN by Analog Devices

ADRF5721BCCZN

Analog Devices

Analog Devices' ADRF5721BCCZN is a RF attenuator with 30 dB nominal attenuation and 27 dBm CW input power. It operates from 0.009 MHz to 40 GHz, ideal for variable attenuation in RF/microwave applications. With a compact 16-terminal surface mount package, it offers precise control over signal levels in high-frequency circuits.

30 dB

50 ohm

COMPONENT

27 dBm

SURFACE MOUNT

16

40000 MHz

.009 MHz

105 Cel

-40 Cel

PLASTIC/EPOXY

LCC16,.1SQ,16

+-3.3

VARIABLE ATTENUATOR

ADRF5731BCCZN-R7 by Analog Devices

ADRF5731BCCZN-R7

Analog Devices

Analog Devices' ADRF5731BCCZN-R7 is a RF/Microwave Attenuator with 30 dB Nominal Attenuation, 3.5 dB Max Insertion Loss, and 26.99 dBm Max Input Power (CW). It operates b/w -40 to 105°C, has a frequency range of 100 MHz to 40 GHz, and requires +-3.3V power supply. Ideal for variable attenuation in RF/microwave applications.

CMOS COMPATIBLE, I/P POWER-MAX(PEAK)=1.26W

30 dB

50 ohm

COMPONENT

26.99 dBm

3.5 dB

SURFACE MOUNT

16

40000 MHz

100 MHz

105 Cel

-40 Cel

PLASTIC/EPOXY

LCC16,.1SQ,16

+-3.3

VARIABLE ATTENUATOR

ADRF5731BCCZN by Analog Devices

ADRF5731BCCZN

Analog Devices

Analog Devices' ADRF5731BCCZN is a RF attenuator with 30 dB attenuation, 3.5 dB insertion loss, and 26.99 dBm CW input power. Ideal for RF applications from 100 MHz to 40 GHz, it features a 50 ohm impedance and operates b/w -40°C to +105°C.

CMOS COMPATIBLE, I/P POWER-MAX(PEAK)=1.26W

30 dB

50 ohm

COMPONENT

26.99 dBm

3.5 dB

SURFACE MOUNT

16

40000 MHz

100 MHz

105 Cel

-40 Cel

PLASTIC/EPOXY

LCC16,.1SQ,16

+-3.3

VARIABLE ATTENUATOR

HMC624ACPSZ-EP-PT by Analog Devices

HMC624ACPSZ-EP-PT

Analog Devices

Analog Devices' HMC624ACPSZ-EP-PT is a RF/Microwave Attenuator with 31.5 dB Nominal Attenuation, 25 dBm Max Input Power, and 3.8 dB Max Insertion Loss. It operates from 100 MHz to 6000 MHz, making it ideal for variable attenuation in RF/microwave systems requiring precise power control.

31.5 dB

COMPONENT

25 dBm

3.8 dB

SURFACE MOUNT

24

6000 MHz

100 MHz

105 Cel

-55 Cel

PLASTIC/EPOXY

LCC24,.16SQ,20

3/5

VARIABLE ATTENUATOR

GAAS

HMC624ACPSZ-EP-RL7 by Analog Devices

HMC624ACPSZ-EP-RL7

Analog Devices

Analog Devices' HMC624ACPSZ-EP-RL7 is a RF/Microwave Attenuator with 31.5 dB Nominal Attenuation, 3.8 dB Max Insertion Loss, and 25 dBm Max Input Power (CW). It operates from -55 °C to 105°C, suitable for applications requiring variable attenuation in the frequency range of 100 MHz to 6 GHz.

31.5 dB

COMPONENT

25 dBm

3.8 dB

SURFACE MOUNT

24

6000 MHz

100 MHz

105 Cel

-55 Cel

PLASTIC/EPOXY

LCC24,.16SQ,20

3/5

VARIABLE ATTENUATOR

GAAS

HMC425ALP3ETR by Analog Devices

HMC425ALP3ETR

Analog Devices

Analog Devices' HMC425ALP3ETR is a RF attenuator with 31.5 dB attenuation, 27 dBm CW input power, and 4.7 dB insertion loss. Ideal for variable attenuation in RF/microwave applications from 2200 MHz to 8000 MHz, it features GAAS technology and operates b/w -40 °C to 85°C.

31.5 dB

50 ohm

COMPONENT

27 dBm

4.7 dB

e3

SURFACE MOUNT

16

8000 MHz

2200 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC16,.12SQ,20

5

VARIABLE ATTENUATOR

GAAS

Matte Tin (Sn) - annealed

HMC346ALC3BTR by Analog Devices

HMC346ALC3BTR

Analog Devices

Analog Devices' HMC346ALC3BTR is a RF/Microwave Attenuator with 24 dB Nominal Attenuation, 18 dBm Max Input Power, and 4 dB Max Insertion Loss. This variable attenuator operates from -40°C to 85°C, ideal for applications requiring precise signal control in the frequency range of 0-18000 MHz.

24 dB

50 ohm

COMPONENT

18 dBm

4 dB

e4

SURFACE MOUNT

12

18000 MHz

0 MHz

85 Cel

-40 Cel

CERAMIC

LCC12,.12SQ,20

VARIABLE ATTENUATOR

GAAS

GOLD OVER NICKEL

HMC424A-SX by Analog Devices

HMC424A-SX

Analog Devices

Analog Devices' HMC424A-SX is a RF/Microwave Attenuator with 31.5 dB attenuation, 1.67 VSWR, and 25 dBm CW input power. Ideal for variable attenuation in RF/microwave circuits from 100 MHz to 13 GHz. Suitable for surface mount applications with -40 °C to 85°C operating temperature range.

31.5 dB

50 ohm

COMPONENT

25 dBm

4.6 dB

SURFACE MOUNT

9

13000 MHz

100 MHz

85 Cel

-40 Cel

DIE OR CHIP

-5

VARIABLE ATTENUATOR

5 mA

GAAS

1.67

HMC346ALP3ETR by Analog Devices

HMC346ALP3ETR

Analog Devices

Analog Devices' HMC346ALP3ETR is a RF attenuator with 30 dB attenuation, 18 dBm CW input power, and 1.92 VSWR. Ideal for variable attenuation in RF/microwave applications up to 14 GHz, it features GaAs technology, surface mounting, and operates b/w -40 °C to 85°C.

30 dB

50 ohm

COMPONENT

18 dBm

3.2 dB

e3

SURFACE MOUNT

16

14000 MHz

0 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC16,.12SQ,20

VARIABLE ATTENUATOR

GAAS

Matte Tin (Sn) - annealed

1.92