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16 RF/Microwave Attenuators 16

RF/Microwave Attenuators
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Nominal Attenuation Characteristic Impedance Construction Maximum Input Power (CW) Maximum Insertion Loss JESD-609 Code Mounting Feature No. of Terminals Maximum Operating Frequency Minimum Operating Frequency Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Equivalence Code Power Supplies (V) RF or Microwave Device Type Screening Level Sub-Category Maximum Supply Current Technology Terminal Finish Maximum Voltage Standing Wave Ratio
ADRF5740BCCZN-R7 by Analog Devices

ADRF5740BCCZN-R7

Analog Devices

Analog Devices' ADRF5740BCCZN-R7 is a RF/Microwave Attenuator with 22 dB Nominal Attenuation, 1.49 Max VSWR, and -40 to 105 °C Operating Temperature range. It is a VARIABLE ATTENUATOR suitable for applications requiring precise signal attenuation in the frequency range of 10 MHz to 60 GHz.

22 dB

50 ohm

COMPONENT

25 dBm

SURFACE MOUNT

16

60000 MHz

10 MHz

105 Cel

-40 Cel

PLASTIC/EPOXY

LCC16,.1SQ,16

-3.3, 3.3

VARIABLE ATTENUATOR

1.49

ADRF5740BCCZN by Analog Devices

ADRF5740BCCZN

Analog Devices

Analog Devices' ADRF5740BCCZN is a RF/Microwave Attenuator with 22 dB Nominal Attenuation, 1.49 Max VSWR, and 25 dBm Max Input Power. Ideal for applications requiring variable attenuation in the frequency range of 10 MHz to 60 GHz.

22 dB

50 ohm

COMPONENT

25 dBm

SURFACE MOUNT

16

60000 MHz

10 MHz

105 Cel

-40 Cel

PLASTIC/EPOXY

LCC16,.1SQ,16

-3.3, 3.3

VARIABLE ATTENUATOR

1.49

HMC539ALP3E by Analog Devices

HMC539ALP3E

Analog Devices

Analog Devices' HMC539ALP3E is a RF/Microwave Attenuator with 7.75 dB attenuation and 1.7 dB insertion loss, suitable for applications requiring variable attenuation in the frequency range of 0-4000 MHz. This component has a max input power of 29 dBm, operates at temperatures from -40 to 85°C, and features a GaAs technology construction with matte tin terminal finish.

7.75 dB

50 ohm

COMPONENT

29 dBm

1.7 dB

e3

SURFACE MOUNT

16

4000 MHz

0 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC16,.12SQ,20

3/5

VARIABLE ATTENUATOR

GAAS

MATTE TIN

HMC346ALP3E by Analog Devices

HMC346ALP3E

Analog Devices

Analog Devices' HMC346ALP3E is a RF attenuator with 30 dB attenuation, 18 dBm input power, and 1.92 VSWR. Ideal for variable attenuation in RF/microwave applications up to 14 GHz, it features GaAs technology and operates b/w -40°C to 85°C.

30 dB

50 ohm

COMPONENT

18 dBm

3.2 dB

SURFACE MOUNT

16

14000 MHz

0 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC16,.12SQ,20

VARIABLE ATTENUATOR

GAAS

1.92

HMC539ALP3 by Analog Devices

HMC539ALP3

Analog Devices

HMC539ALP3 by Analog Devices is a RF/Microwave Attenuator with 7.75 dB Nominal Attenuation and 1.7 dB Max Insertion Loss. It operates from -40 to 85 °C, has a max input power of 29 dBm, and supports frequencies up to 4000 MHz. Ideal for variable attenuation in RF/microwave circuits, it features GAAS technology and surface mounting for easy integration.

7.75 dB

50 ohm

COMPONENT

29 dBm

1.7 dB

e0

SURFACE MOUNT

16

4000 MHz

0 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC16,.12SQ,20

3/5

VARIABLE ATTENUATOR

GAAS

TIN LEAD

HMC424AG16 by Analog Devices

HMC424AG16

Analog Devices

Analog Devices' HMC424AG16 is a GAAS technology RF attenuator with 31.5 dB attenuation and 3.6 dB insertion loss at 3000 MHz. It operates from -40 to 85 °C, handles up to 24.5 dBm CW power, and has a characteristic impedance of 50 ohm. Ideal for RF/microwave applications requiring precise signal control in compact designs.

31.5 dB

50 ohm

COMPONENT

24.5 dBm

3.6 dB

SURFACE MOUNT

16

3000 MHz

85 Cel

-40 Cel

CERAMIC

QFP16,.45SQ,30

-5

VARIABLE ATTENUATOR

GAAS

HMC425ALP3E by Analog Devices

HMC425ALP3E

Analog Devices

HMC425ALP3E by Analog Devices is a RF/Microwave Attenuator with 31.5 dB Nominal Attenuation, 30 dBm Max Input Power (CW), and 4.3 dB Max Insertion Loss. It operates b/w -40 to 85°C, has a characteristic impedance of 50 ohm, and supports frequencies from 2200 MHz to 8000 MHz. Ideal for variable attenuation in RF/microwave applications with surface mounting feature.

31.5 dB

50 ohm

COMPONENT

30 dBm

4.3 dB

e3

SURFACE MOUNT

16

8000 MHz

2200 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC16,.12SQ,20

5

VARIABLE ATTENUATOR

GAAS

MATTE TIN

HMC470ATCPZ-EP-PT by Analog Devices

HMC470ATCPZ-EP-PT

Analog Devices

Analog Devices' HMC470ATCPZ-EP-PT is a RF/Microwave Attenuator with 31 dB Nominal Attenuation, 25 dBm Max Input Power, and 2 dB Max Insertion Loss. Ideal for applications requiring variable attenuation in the frequency range of 100 MHz to 3 GHz.

CMOS COMPATIBLE

31 dB

50 ohm

COMPONENT

25 dBm

2 dB

SURFACE MOUNT

16

3000 MHz

100 MHz

125 Cel

-55 Cel

PLASTIC/EPOXY

LCC16,.12SQ,20

3/5

VARIABLE ATTENUATOR

HMC470ATCPZ-EP-RL7 by Analog Devices

HMC470ATCPZ-EP-RL7

Analog Devices

HMC470ATCPZ-EP-RL7 by Analog Devices is a RF/Microwave Attenuator with 31 dB Nominal Attenuation, 2 dB Max Insertion Loss, and 100 MHz to 3000 MHz Frequency Range. It is ideal for applications requiring precise signal attenuation in the range of -55 °C to 125°C, with a max input power of 25 dBm.

CMOS COMPATIBLE

31 dB

50 ohm

COMPONENT

25 dBm

2 dB

SURFACE MOUNT

16

3000 MHz

100 MHz

125 Cel

-55 Cel

PLASTIC/EPOXY

LCC16,.12SQ,20

3/5

VARIABLE ATTENUATOR

HMC8073LP3DE by Analog Devices

HMC8073LP3DE

Analog Devices

HMC8073LP3DE by Analog Devices is a RF attenuator with 31.5 dB attenuation and 2.2 dB insertion loss, suitable for frequencies b/w 600 MHz to 3000 MHz. It operates at temperatures from -40°C to 85°C, has a max input power of 30 dBm, and requires a 5V power supply. Ideal for applications requiring precise signal control in RF/microwave systems.

CMOS COMPATIBLE

31.5 dB

50 ohm

COMPONENT

30 dBm

2.2 dB

e4

SURFACE MOUNT

16

3000 MHz

600 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC16,.12SQ,20

5

VARIABLE ATTENUATOR

NICKEL PALLADIUM GOLD

ADRF5721BCCZN-R7 by Analog Devices

ADRF5721BCCZN-R7

Analog Devices

VARIABLE ATTENUATOR; Mounting Feature: SURFACE MOUNT; No. of Terminals: 16; Package Body Material: PLASTIC/EPOXY; Maximum Input Power (CW): 27 dBm; Package Equivalence Code: LCC16,.1SQ,16;

30 dB

50 ohm

COMPONENT

27 dBm

SURFACE MOUNT

16

40000 MHz

.009 MHz

105 Cel

-40 Cel

PLASTIC/EPOXY

LCC16,.1SQ,16

+-3.3

VARIABLE ATTENUATOR

ADRF5721BCCZN by Analog Devices

ADRF5721BCCZN

Analog Devices

Analog Devices' ADRF5721BCCZN is a RF attenuator with 30 dB nominal attenuation and 27 dBm CW input power. It operates from 0.009 MHz to 40 GHz, ideal for variable attenuation in RF/microwave applications. With a compact 16-terminal surface mount package, it offers precise control over signal levels in high-frequency circuits.

30 dB

50 ohm

COMPONENT

27 dBm

SURFACE MOUNT

16

40000 MHz

.009 MHz

105 Cel

-40 Cel

PLASTIC/EPOXY

LCC16,.1SQ,16

+-3.3

VARIABLE ATTENUATOR

ADRF5731BCCZN-R7 by Analog Devices

ADRF5731BCCZN-R7

Analog Devices

Analog Devices' ADRF5731BCCZN-R7 is a RF/Microwave Attenuator with 30 dB Nominal Attenuation, 3.5 dB Max Insertion Loss, and 26.99 dBm Max Input Power (CW). It operates b/w -40 to 105°C, has a frequency range of 100 MHz to 40 GHz, and requires +-3.3V power supply. Ideal for variable attenuation in RF/microwave applications.

CMOS COMPATIBLE, I/P POWER-MAX(PEAK)=1.26W

30 dB

50 ohm

COMPONENT

26.99 dBm

3.5 dB

SURFACE MOUNT

16

40000 MHz

100 MHz

105 Cel

-40 Cel

PLASTIC/EPOXY

LCC16,.1SQ,16

+-3.3

VARIABLE ATTENUATOR

ADRF5731BCCZN by Analog Devices

ADRF5731BCCZN

Analog Devices

Analog Devices' ADRF5731BCCZN is a RF attenuator with 30 dB attenuation, 3.5 dB insertion loss, and 26.99 dBm CW input power. Ideal for RF applications from 100 MHz to 40 GHz, it features a 50 ohm impedance and operates b/w -40°C to +105°C.

CMOS COMPATIBLE, I/P POWER-MAX(PEAK)=1.26W

30 dB

50 ohm

COMPONENT

26.99 dBm

3.5 dB

SURFACE MOUNT

16

40000 MHz

100 MHz

105 Cel

-40 Cel

PLASTIC/EPOXY

LCC16,.1SQ,16

+-3.3

VARIABLE ATTENUATOR

HMC425ALP3ETR by Analog Devices

HMC425ALP3ETR

Analog Devices

Analog Devices' HMC425ALP3ETR is a RF attenuator with 31.5 dB attenuation, 27 dBm CW input power, and 4.7 dB insertion loss. Ideal for variable attenuation in RF/microwave applications from 2200 MHz to 8000 MHz, it features GAAS technology and operates b/w -40 °C to 85°C.

31.5 dB

50 ohm

COMPONENT

27 dBm

4.7 dB

e3

SURFACE MOUNT

16

8000 MHz

2200 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC16,.12SQ,20

5

VARIABLE ATTENUATOR

GAAS

Matte Tin (Sn) - annealed

HMC346ALP3ETR by Analog Devices

HMC346ALP3ETR

Analog Devices

Analog Devices' HMC346ALP3ETR is a RF attenuator with 30 dB attenuation, 18 dBm CW input power, and 1.92 VSWR. Ideal for variable attenuation in RF/microwave applications up to 14 GHz, it features GaAs technology, surface mounting, and operates b/w -40 °C to 85°C.

30 dB

50 ohm

COMPONENT

18 dBm

3.2 dB

e3

SURFACE MOUNT

16

14000 MHz

0 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC16,.12SQ,20

VARIABLE ATTENUATOR

GAAS

Matte Tin (Sn) - annealed

1.92