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Infineon Technologies RF & Microwave Amplifiers 21

RF & Microwave Amplifiers
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Characteristic Impedance Construction Gain Maximum Input Power (CW) JESD-609 Code Mounting Feature No. of Functions No. of Terminals Maximum Operating Frequency Minimum Operating Frequency Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Equivalence Code Power Supplies (V) RF or Microwave Device Type Screening Level Sub-Category Maximum Supply Current Maximum Supply Voltage Technology Terminal Finish Maximum Voltage Standing Wave Ratio
BGA622-E6327 by Infineon Technologies

BGA622-E6327

Infineon Technologies

RF/Microwave Amplifiers; Package Body Material: PLASTIC/EPOXY; No. of Functions: 1; Minimum Operating Temperature: -30 Cel; Package Equivalence Code: SOT-343R; Maximum Operating Temperature: 85 Cel;

1

85 Cel

-30 Cel

PLASTIC/EPOXY

SOT-343R

2.75

RF/Microwave Amplifiers

BGA420H6327 by Infineon Technologies

BGA420H6327

Infineon Technologies

RF/Microwave Amplifiers; Package Body Material: PLASTIC/EPOXY; Technology: BIPOLAR; No. of Functions: 1; Minimum Operating Temperature: -65 Cel; Power Supplies (V): 3;

1

150 Cel

-65 Cel

PLASTIC/EPOXY

SOT-343R

3

RF/Microwave Amplifiers

8 mA

BIPOLAR

PTMA210152MV1AUMA1 by Infineon Technologies

PTMA210152MV1AUMA1

Infineon Technologies

NARROW BAND HIGH POWER; Mounting Feature: SURFACE MOUNT; No. of Terminals: 20; Package Body Material: PLASTIC/EPOXY; Power Supplies (V): 28; Maximum Input Power (CW): 15 dBm;

50 ohm

COMPONENT

27.5 dB

15 dBm

SURFACE MOUNT

1

20

2200 MHz

1800 MHz

PLASTIC/EPOXY

SOP20,.56

28

NARROW BAND HIGH POWER

10

BGA612E6327HTSA1 by Infineon Technologies

BGA612E6327HTSA1

Infineon Technologies

WIDE BAND LOW POWER; Terminal Finish: Matte Tin (Sn); Construction: COMPONENT; Maximum Operating Frequency: 2800 MHz; Minimum Operating Temperature: -65 Cel; Characteristic Impedance: 50 ohm;

50 ohm

COMPONENT

16.3 dB

10 dBm

e3

2800 MHz

0 MHz

150 Cel

-65 Cel

WIDE BAND LOW POWER

Matte Tin (Sn)

BGA612H6327XTSA1 by Infineon Technologies

BGA612H6327XTSA1

Infineon Technologies

Infineon's BGA612H6327XTSA1 is a wide band low power RF amplifier with 16.3 dB gain and 10 dBm max input power. Operating from -65 to 150°C, it covers frequencies from 0 to 2800 MHz. Ideal for RF & microwave applications requiring high gain in a compact form factor.

50 ohm

COMPONENT

16.3 dB

10 dBm

e3

2800 MHz

0 MHz

150 Cel

-65 Cel

WIDE BAND LOW POWER

Tin (Sn)

BGA231L7E6327XTSA1 by Infineon Technologies

BGA231L7E6327XTSA1

Infineon Technologies

NARROW BAND LOW POWER; Minimum Operating Temperature: -40 Cel; Maximum Operating Temperature: 85 Cel; Characteristic Impedance: 50 ohm; Minimum Operating Frequency: 1550 MHz; Maximum Input Power (CW): 0 dBm;

50 ohm

COMPONENT

16 dB

0 dBm

1615 MHz

1550 MHz

85 Cel

-40 Cel

NARROW BAND LOW POWER

BGA231N7E6327XTSA2 by Infineon Technologies

BGA231N7E6327XTSA2

Infineon Technologies

BGA231N7E6327XTSA2 by Infineon Technologies is a narrow band low power RF amplifier with a gain of 16 dB. It operates b/w 1550-1615 MHz, handling up to 0 dBm CW input power. Ideal for applications requiring high performance in RF and microwave systems within -40 to 85°C temperature range.

50 ohm

COMPONENT

16 dB

0 dBm

e3

1615 MHz

1550 MHz

85 Cel

-40 Cel

NARROW BAND LOW POWER

Tin (Sn)

BGA416E6327HTSA1 by Infineon Technologies

BGA416E6327HTSA1

Infineon Technologies

WIDE BAND LOW POWER; Minimum Operating Frequency: 900 MHz; Maximum Operating Temperature: 150 Cel; Construction: COMPONENT; Maximum Input Power (CW): 8 dBm; JESD-609 Code: e3;

50 ohm

COMPONENT

14 dB

8 dBm

e3

1800 MHz

900 MHz

150 Cel

-65 Cel

WIDE BAND LOW POWER

Tin (Sn)

BGA622L7E6327XTSA1 by Infineon Technologies

BGA622L7E6327XTSA1

Infineon Technologies

WIDE BAND LOW POWER; Gain: 16.2 dB; JESD-609 Code: e4; Terminal Finish: Gold (Au); Minimum Operating Frequency: 500 MHz; Maximum Operating Temperature: 150 Cel;

50 ohm

COMPONENT

16.2 dB

6 dBm

e4

6000 MHz

500 MHz

150 Cel

-65 Cel

WIDE BAND LOW POWER

Gold (Au)

BGA428H6327XTSA1 by Infineon Technologies

BGA428H6327XTSA1

Infineon Technologies

NARROW BAND LOW POWER; Characteristic Impedance: 50 ohm; Maximum Input Power (CW): 8 dBm; Gain: 20 dB; Construction: COMPONENT; Maximum Operating Temperature: 85 Cel;

50 ohm

COMPONENT

20 dB

8 dBm

85 Cel

-40 Cel

NARROW BAND LOW POWER

BGA461E6327XTSA1 by Infineon Technologies

BGA461E6327XTSA1

Infineon Technologies

WIDE BAND LOW POWER; Construction: COMPONENT; Gain: 19.5 dB; Maximum Input Power (CW): 10 dBm; Minimum Operating Temperature: -30 Cel; Characteristic Impedance: 50 ohm;

50 ohm

COMPONENT

19.5 dB

10 dBm

85 Cel

-30 Cel

WIDE BAND LOW POWER

BGA615L7E6327XTSA1 by Infineon Technologies

BGA615L7E6327XTSA1

Infineon Technologies

NARROW BAND MEDIUM POWER; Maximum Input Power (CW): 10 dBm; Minimum Operating Temperature: -30 Cel; Gain: 18 dB; Additional Features: LOW NOISE; Maximum Operating Temperature: 85 Cel;

LOW NOISE

50 ohm

COMPONENT

18 dB

10 dBm

85 Cel

-30 Cel

NARROW BAND MEDIUM POWER

BGA616E6327HTSA1 by Infineon Technologies

BGA616E6327HTSA1

Infineon Technologies

WIDE BAND LOW POWER; Gain: 18 dB; Maximum Operating Frequency: 2700 MHz; Maximum Operating Temperature: 150 Cel; Minimum Operating Temperature: -65 Cel; Minimum Operating Frequency: 0 MHz;

50 ohm

COMPONENT

18 dB

10 dBm

2700 MHz

0 MHz

150 Cel

-65 Cel

WIDE BAND LOW POWER

BGA628L7E6327XTMA1 by Infineon Technologies

BGA628L7E6327XTMA1

Infineon Technologies

WIDE BAND LOW POWER; Characteristic Impedance: 50 ohm; Minimum Operating Temperature: -65 Cel; Maximum Operating Temperature: 150 Cel; Construction: COMPONENT; Maximum Operating Frequency: 6000 MHz;

50 ohm

COMPONENT

10 dB

6 dBm

6000 MHz

400 MHz

150 Cel

-65 Cel

WIDE BAND LOW POWER

BGA711L7E6327XTSA1 by Infineon Technologies

BGA711L7E6327XTSA1

Infineon Technologies

NARROW BAND MEDIUM POWER; Additional Features: LOW NOISE; Gain: 16.7 dB; Maximum Input Power (CW): 4 dBm; Maximum Operating Temperature: 85 Cel; Minimum Operating Frequency: 2110 MHz;

LOW NOISE

50 ohm

COMPONENT

16.7 dB

4 dBm

2155 MHz

2110 MHz

85 Cel

-30 Cel

NARROW BAND MEDIUM POWER

BGA715L7E6327XTSA1 by Infineon Technologies

BGA715L7E6327XTSA1

Infineon Technologies

NARROW BAND LOW POWER; Characteristic Impedance: 50 ohm; Construction: COMPONENT; Minimum Operating Temperature: -40 Cel; Additional Features: LOW NOISE; Maximum Input Power (CW): 10 dBm;

LOW NOISE

50 ohm

COMPONENT

20 dB

10 dBm

85 Cel

-40 Cel

NARROW BAND LOW POWER

BGA751L7E6327XTSA1 by Infineon Technologies

BGA751L7E6327XTSA1

Infineon Technologies

NARROW BAND LOW POWER; Maximum Operating Frequency: 885 MHz; Maximum Operating Temperature: 85 Cel; Minimum Operating Temperature: -30 Cel; Characteristic Impedance: 50 ohm; Construction: COMPONENT;

LOW NOISE

50 ohm

COMPONENT

15.8 dB

4 dBm

885 MHz

875 MHz

85 Cel

-30 Cel

NARROW BAND LOW POWER

BGA614E6327HTSA1 by Infineon Technologies

BGA614E6327HTSA1

Infineon Technologies

WIDE BAND LOW POWER; Minimum Operating Frequency: 0 MHz; Minimum Operating Temperature: -65 Cel; Construction: COMPONENT; Characteristic Impedance: 50 ohm; Maximum Operating Temperature: 150 Cel;

50 ohm

COMPONENT

17.5 dB

10 dBm

2400 MHz

0 MHz

150 Cel

-65 Cel

WIDE BAND LOW POWER

PTMA080152MV1AUMA1 by Infineon Technologies

PTMA080152MV1AUMA1

Infineon Technologies

Infineon's PTMA080152MV1AUMA1 is a wide band high power RF amplifier with 29 dB gain, 42 dBm CW input power, and VSWR of 10. Ideal for applications requiring amplification in the frequency range of 700-1000 MHz.

50 ohm

COMPONENT

29 dB

42 dBm

e3

1000 MHz

700 MHz

WIDE BAND HIGH POWER

Tin (Sn)

10

PTMA210452ELV1XWSA1 by Infineon Technologies

PTMA210452ELV1XWSA1

Infineon Technologies

NARROW BAND HIGH POWER; Maximum Input Power (CW): 25 dBm; Construction: MODULE; Gain: 26.5 dB; Minimum Operating Frequency: 1900 MHz; Characteristic Impedance: 50 ohm;

50 ohm

MODULE

26.5 dB

25 dBm

2200 MHz

1900 MHz

NARROW BAND HIGH POWER

10

BGA748N16E6327 by Infineon Technologies

BGA748N16E6327

Infineon Technologies

NARROW BAND LOW POWER; Characteristic Impedance: 50 ohm; Minimum Operating Frequency: 2110 MHz; Gain: 18 dB; Additional Features: LOW NOISE, IT CAN ALSO OPERATE AT 925-960 MHZ,1930-1990 MHZ AND 2110-2170 MHZ; Minimum Operating Temperature: -30 Cel;

LOW NOISE, IT CAN ALSO OPERATE AT 925-960 MHZ,1930-1990 MHZ AND 2110-2170 MHZ

50 ohm

COMPONENT

18 dB

4 dBm

2170 MHz

2110 MHz

85 Cel

-30 Cel

NARROW BAND LOW POWER