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Analog Devices RF & Microwave Amplifiers 165

RF & Microwave Amplifiers
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Characteristic Impedance Construction Gain Maximum Input Power (CW) JESD-609 Code Mounting Feature No. of Functions No. of Terminals Maximum Operating Frequency Minimum Operating Frequency Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Equivalence Code Power Supplies (V) RF or Microwave Device Type Screening Level Sub-Category Maximum Supply Current Maximum Supply Voltage Technology Terminal Finish Maximum Voltage Standing Wave Ratio
HMC8325 by Analog Devices

HMC8325

Analog Devices

HMC8325 by Analog Devices is a PHEMT RF amplifier with 19.5 dB gain, operating b/w 71-86 GHz. It has 22 terminals, requires 3V power supply at max current of 50 mA. Ideal for wideband low-power applications in RF & microwave systems due to its surface mount construction and characteristic impedance of 50 ohms.

50 ohm

COMPONENT

19.5 dB

SURFACE MOUNT

1

22

86000 MHz

71000 MHz

85 Cel

-55 Cel

DIE OR CHIP

3

WIDE BAND LOW POWER

50 mA

PHEMT

HMC8205BF10 by Analog Devices

HMC8205BF10

Analog Devices

Analog Devices' HMC8205BF10 is a wideband high-power RF amplifier with 25 dB gain and 35 dBm CW input power. Operating from 300 MHz to 6 GHz, it features a characteristic impedance of 50 ohms. Ideal for applications requiring high-power amplification in RF and microwave systems.

50 ohm

COMPONENT

25 dB

35 dBm

e4

6000 MHz

300 MHz

85 Cel

-40 Cel

WIDE BAND HIGH POWER

GOLD OVER NICKEL

HMC618ALP3E by Analog Devices

HMC618ALP3E

Analog Devices

HMC618ALP3E by Analog Devices is a PHEMT RF amplifier with 12.5 dB gain, operating b/w 1200-2200 MHz. It has a max input power of 10 dBm and requires a 5V power supply, making it ideal for narrowband low-power applications in RF and microwave systems. The component is housed in a plastic/epoxy package with surface mounting feature, suitable for temperatures ranging from -40 to 85°C.

50 ohm

COMPONENT

12.5 dB

10 dBm

e3

SURFACE MOUNT

1

16

2200 MHz

1200 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC16,.12SQ,20

5

NARROW BAND LOW POWER

65 mA

PHEMT

MATTE TIN

HMC907APM5ETR by Analog Devices

HMC907APM5ETR

Analog Devices

HMC907APM5ETR by Analog Devices is a RF & Microwave Amplifier with 25 dBm CW input power, 7 VSWR, and 12 dB gain. Ideal for wide band medium power applications, it operates from -40 to 85°C with a frequency range of 200 MHz to 22 GHz.

50 ohm

COMPONENT

12 dB

25 dBm

SURFACE MOUNT

1

32

22000 MHz

200 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC32,.2SQ,20

10

WIDE BAND MEDIUM POWER

430 mA

7

HMC1049-SX by Analog Devices

HMC1049-SX

Analog Devices

Analog Devices' HMC1049-SX is a wide band low power RF amplifier with 11 dB gain and 18 dBm CW input power. Operating from 300 MHz to 20 GHz, it's ideal for RF & microwave applications requiring components with a characteristic impedance of 50 ohms. Temperature range: -55 °C to +85°C.

50 ohm

COMPONENT

11 dB

18 dBm

20000 MHz

300 MHz

85 Cel

-55 Cel

WIDE BAND LOW POWER

HMC565LC5TR-R5 by Analog Devices

HMC565LC5TR-R5

Analog Devices

Analog Devices' HMC565LC5TR-R5 is a wide band low power RF amplifier with 16 dB gain, operating from 6-20 GHz. It can handle up to 10 dBm CW input power and operates b/w -40°C to +85°C. Ideal for applications requiring high frequency amplification in RF & microwave systems.

50 ohm

COMPONENT

16 dB

10 dBm

20000 MHz

6000 MHz

85 Cel

-40 Cel

WIDE BAND LOW POWER

HMC637BPM5E by Analog Devices

HMC637BPM5E

Analog Devices

Analog Devices' HMC637BPM5E is a GAAS RF amplifier with 12.5 dB gain, operating from 0 to 7500 MHz. It has a max input power of 25 dBm and VSWR of 7, suitable for wideband medium-power applications in RF & microwave systems. With a compact surface-mount construction and operating temperatures from -55°C to 85°C, it offers reliable performance in various environments.

50 ohm

COMPONENT

12.5 dB

25 dBm

e4

SURFACE MOUNT

1

32

7500 MHz

0 MHz

85 Cel

-55 Cel

LCC32,.2SQ,20

12

WIDE BAND MEDIUM POWER

GAAS

Nickel/Palladium/Gold (Ni/Pd/Au)

7

HMC788ACPSZ-EP-PT by Analog Devices

HMC788ACPSZ-EP-PT

Analog Devices

Analog Devices' HMC788ACPSZ-EP-PT is a wide band low power RF amplifier with 9 dB gain, 10-10000 MHz frequency range, and 20 dBm CW input power. Ideal for RF & microwave applications requiring high performance in temperatures ranging from -55 to 105°C.

50 ohm

COMPONENT

9 dB

20 dBm

e4

10000 MHz

10 MHz

105 Cel

-55 Cel

WIDE BAND LOW POWER

NICKEL PALLADIUM GOLD

HMC788ACPSZ-EP-R7 by Analog Devices

HMC788ACPSZ-EP-R7

Analog Devices

Analog Devices' HMC788ACPSZ-EP-R7 is a wide band low power RF amplifier with 9 dB gain and 20 dBm CW input power. It operates from 10 MHz to 10 GHz, suitable for RF applications requiring high performance in extreme temperatures (-55 °C to 105°C).

50 ohm

COMPONENT

9 dB

20 dBm

e4

10000 MHz

10 MHz

105 Cel

-55 Cel

WIDE BAND LOW POWER

NICKEL PALLADIUM GOLD

HMC902-SX by Analog Devices

HMC902-SX

Analog Devices

Analog Devices' HMC902-SX is a wide band low power RF amplifier with 17 dB gain, operating from 5-11 GHz. With a max input power of 10 dBm and temperature range of -55 to 85 °C, it's ideal for RF & microwave applications requiring high performance in harsh environments.

50 ohm

COMPONENT

17 dB

10 dBm

11000 MHz

5000 MHz

85 Cel

-55 Cel

WIDE BAND LOW POWER

HMC906A by Analog Devices

HMC906A

Analog Devices

WIDE BAND MEDIUM POWER; Characteristic Impedance: 50 ohm; Gain: 25 dB; Minimum Operating Temperature: -55 Cel; Maximum Input Power (CW): 20 dBm; Minimum Operating Frequency: 27300 MHz;

50 ohm

COMPONENT

25 dB

20 dBm

33500 MHz

27300 MHz

85 Cel

-55 Cel

WIDE BAND MEDIUM POWER

HMC1126-SX by Analog Devices

HMC1126-SX

Analog Devices

WIDE BAND LOW POWER; Characteristic Impedance: 50 ohm; Minimum Operating Frequency: 2000 MHz; Maximum Input Power (CW): 22 dBm; Minimum Operating Temperature: -55 Cel; Maximum Operating Temperature: 85 Cel;

50 ohm

COMPONENT

8 dB

22 dBm

50000 MHz

2000 MHz

85 Cel

-55 Cel

WIDE BAND LOW POWER

HMC564LC4TR-R5 by Analog Devices

HMC564LC4TR-R5

Analog Devices

Analog Devices' HMC564LC4TR-R5 is a wide band low power RF amplifier with 14 dB gain and 20 dBm CW input power. Operating from -40 to 85°C, it covers frequencies from 7-14 GHz. Ideal for RF & microwave applications requiring high performance in a compact component package.

50 ohm

COMPONENT

14 dB

20 dBm

14000 MHz

7000 MHz

85 Cel

-40 Cel

WIDE BAND LOW POWER

HMC606LC5TR-R5 by Analog Devices

HMC606LC5TR-R5

Analog Devices

Analog Devices' HMC606LC5TR-R5 is a wide band low power RF amplifier with 9.5 dB gain, suitable for frequencies ranging from 2-18 GHz. It can handle up to 15 dBm CW input power and operates in temperatures from -40 to 85°C. Ideal for RF and microwave applications requiring high performance in a compact component design.

50 ohm

COMPONENT

9.5 dB

15 dBm

18000 MHz

2000 MHz

85 Cel

-40 Cel

WIDE BAND LOW POWER

HMC903-SX by Analog Devices

HMC903-SX

Analog Devices

Analog Devices' HMC903-SX is a wide band low power RF amplifier with 17 dB gain and 50 ohm impedance. It operates from 6-18 GHz, handles up to 20 dBm CW input power, and can be used in various RF & microwave applications.

50 ohm

COMPONENT

17 dB

20 dBm

18000 MHz

6000 MHz

85 Cel

-55 Cel

WIDE BAND LOW POWER

HMC637BPM5ETR by Analog Devices

HMC637BPM5ETR

Analog Devices

Analog Devices' HMC637BPM5ETR is a GAAS RF amplifier with 12.5 dB gain, 50 ohm impedance, and 25 dBm CW input power. It operates from 0 to 7500 MHz, suitable for wideband medium-power applications in RF & microwave systems. With a compact surface-mount design and high VSWR tolerance of 7, it's ideal for various communication and radar systems.

50 ohm

COMPONENT

12.5 dB

25 dBm

e4

SURFACE MOUNT

1

32

7500 MHz

0 MHz

85 Cel

-55 Cel

LCC32,.2SQ,20

12

WIDE BAND MEDIUM POWER

GAAS

Nickel/Palladium/Gold (Ni/Pd/Au)

7

HMC1040CHIPS by Analog Devices

HMC1040CHIPS

Analog Devices

Analog Devices' HMC1040CHIPS is a wide band low power RF amplifier with 19 dB gain, suitable for frequencies ranging from 20-44 GHz. It can handle up to 5 dBm CW input power and operates in temperatures from -55 to 85°C. Ideal for RF and microwave applications requiring high performance amplification.

50 ohm

COMPONENT

19 dB

5 dBm

44000 MHz

20000 MHz

85 Cel

-55 Cel

WIDE BAND LOW POWER

ADMV7710CHIPS by Analog Devices

ADMV7710CHIPS

Analog Devices

Analog Devices' ADMV7710CHIPS is a wide band medium power RF amplifier with 21 dB gain, operating from 71-76 GHz. Ideal for applications requiring high-frequency amplification in temperatures ranging from -55 to 85 °C.

50 ohm

COMPONENT

21 dB

76000 MHz

71000 MHz

85 Cel

-55 Cel

WIDE BAND MEDIUM POWER

ADMV7810CHIPS by Analog Devices

ADMV7810CHIPS

Analog Devices

Analog Devices' ADMV7810CHIPS is a wide band medium power RF amplifier with 18 dB gain. Operating from -55 °C to 85°C, it covers frequencies from 81-86 GHz. Ideal for RF & microwave applications requiring high performance in a compact component form factor.

50 ohm

COMPONENT

18 dB

86000 MHz

81000 MHz

85 Cel

-55 Cel

WIDE BAND MEDIUM POWER

HMC1099PM5ETR by Analog Devices

HMC1099PM5ETR

Analog Devices

HMC1099PM5ETR by Analog Devices is a GAN technology RF amplifier with 16.5 dB gain, operating from 10 MHz to 1100 MHz. It has a max input power of 33 dBm and VSWR of 6, suitable for wideband high-power applications in RF and microwave systems. The component is housed in a plastic/epoxy package with 32 terminals, designed for surface mount installation at temperatures ranging from -40°C to 85°C.

50 ohm

COMPONENT

16.5 dB

33 dBm

SURFACE MOUNT

1

32

1100 MHz

10 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC32,.2SQ,20

28

WIDE BAND HIGH POWER

100 mA

GAN

6

HMC1099PM5E by Analog Devices

HMC1099PM5E

Analog Devices

HMC1099PM5E by Analog Devices is a GAN technology RF amplifier with 16.5 dB gain, operating from 10 MHz to 1100 MHz. It has a max input power of 33 dBm and VSWR of 6, suitable for wideband high-power applications in temperatures ranging from -40°C to 85°C. The component features a plastic/epoxy package body material and surface mounting feature.

50 ohm

COMPONENT

16.5 dB

33 dBm

SURFACE MOUNT

1

32

1100 MHz

10 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC32,.2SQ,20

28

WIDE BAND HIGH POWER

100 mA

GAN

6

HMC8500PM5ETR by Analog Devices

HMC8500PM5ETR

Analog Devices

Analog Devices' HMC8500PM5ETR is a GaN wide band high power RF amplifier with 12 dB gain, operating from 10 MHz to 2800 MHz. It has a max input power of 33 dBm and VSWR of 6, suitable for applications requiring high power amplification in RF and microwave systems. The component is housed in a plastic/epoxy package with 32 terminals, designed for surface mount installation at temperatures ranging from -40°C to 85°C.

50 ohm

COMPONENT

12 dB

33 dBm

e4

SURFACE MOUNT

1

32

2800 MHz

10 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC32,.2SQ,20

28

WIDE BAND HIGH POWER

100 mA

GAN

NICKEL PALLADIUM GOLD

6

HMC8500PM5E by Analog Devices

HMC8500PM5E

Analog Devices

Analog Devices' HMC8500PM5E is a GAN RF amplifier with 12dB gain, operating from 10MHz to 2800MHz. It has a max input power of 33dBm and VSWR of 6, suitable for wideband high-power applications. The component features a plastic/epoxy package, surface mounting, and operates at temperatures ranging from -40°C to 85°C.

50 ohm

COMPONENT

12 dB

33 dBm

e4

SURFACE MOUNT

1

32

2800 MHz

10 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC32,.2SQ,20

28

WIDE BAND HIGH POWER

100 mA

GAN

NICKEL PALLADIUM GOLD

6

HMC943APM5ETR by Analog Devices

HMC943APM5ETR

Analog Devices

HMC943APM5ETR by Analog Devices is a wide band medium power RF amplifier with 20.5 dB gain, operating from 24-34 GHz. It can handle up to 20 dBm CW input power and has a max VSWR of 7. Ideal for applications requiring high frequency amplification in RF & microwave systems.

50 ohm

COMPONENT

20.5 dB

20 dBm

34000 MHz

24000 MHz

85 Cel

-40 Cel

WIDE BAND MEDIUM POWER

7

HMC943APM5E by Analog Devices

HMC943APM5E

Analog Devices

HMC943APM5E by Analog Devices is a wide band medium power RF amplifier with 20.5 dB gain, operating frequency range of 24-34 GHz, and max input power of 20 dBm. It has a VSWR of 7 and operates b/w -40 to +85°C. Ideal for RF & microwave applications requiring high gain and broad frequency coverage.

50 ohm

COMPONENT

20.5 dB

20 dBm

34000 MHz

24000 MHz

85 Cel

-40 Cel

WIDE BAND MEDIUM POWER

7

HMC1132PM5ETR by Analog Devices

HMC1132PM5ETR

Analog Devices

Analog Devices' HMC1132PM5ETR is a wide band medium power RF amplifier with 21 dB gain, 50 ohm impedance, and 18 dBm CW input power. It operates b/w 27-32 GHz, making it ideal for high-frequency applications in RF and microwave systems. With a VSWR of 7 and operating temperatures from -55 to 85°C, it ensures reliable performance in various environments.

50 ohm

COMPONENT

21 dB

18 dBm

32000 MHz

27000 MHz

85 Cel

-55 Cel

WIDE BAND MEDIUM POWER

7

HMC1132PM5E by Analog Devices

HMC1132PM5E

Analog Devices

Analog Devices' HMC1132PM5E is a wide band medium power RF amplifier with 21 dB gain and 50 ohm impedance. It operates b/w 27-32 GHz, handles up to 18 dBm CW input power, and has a VSWR of 7. Ideal for RF & microwave applications requiring high performance in temperatures ranging from -55 to +85°C.

50 ohm

COMPONENT

21 dB

18 dBm

32000 MHz

27000 MHz

85 Cel

-55 Cel

WIDE BAND MEDIUM POWER

7

HMC8415LP6GETR by Analog Devices

HMC8415LP6GETR

Analog Devices

Analog Devices' HMC8415LP6GETR is a wideband high-power RF amplifier with 25.5 dB gain, operating from 9-10.5 GHz. It can handle up to 30 dBm CW input power and operates in temperatures ranging from -40 °C to 85°C. Ideal for RF and microwave applications requiring high power amplification in a compact component design.

50 ohm

COMPONENT

25.5 dB

30 dBm

e3

10500 MHz

9000 MHz

85 Cel

-40 Cel

WIDE BAND HIGH POWER

MATTE TIN

HMC8415LP6GE by Analog Devices

HMC8415LP6GE

Analog Devices

Analog Devices' HMC8415LP6GE is a wide band high power RF amplifier with 25.5 dB gain, operating from 9-10.5 GHz. It can handle up to 30 dBm CW input power and operates b/w -40 to +85°C. Ideal for RF & microwave applications requiring high power amplification in a compact component form factor.

50 ohm

COMPONENT

25.5 dB

30 dBm

e3

10500 MHz

9000 MHz

85 Cel

-40 Cel

WIDE BAND HIGH POWER

MATTE TIN

HMC1114PM5E by Analog Devices

HMC1114PM5E

Analog Devices

Analog Devices' HMC1114PM5E is a GaN wide band high power RF amplifier with 31 dB gain, operating from 2.7 GHz to 3.8 GHz. It has a max input power of 18 dBm and VSWR of 6, suitable for applications requiring high-power amplification in the RF & microwave domain. The component is housed in a plastic/epoxy package with 32 terminals, designed for surface mount installation.

50 ohm

COMPONENT

31 dB

18 dBm

e4

SURFACE MOUNT

1

32

3800 MHz

2700 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC32,.2SQ,20

28

WIDE BAND HIGH POWER

150 mA

GAN

NICKEL PALLADIUM GOLD

6

ADPA7001CHIPS by Analog Devices

ADPA7001CHIPS

Analog Devices

ADPA7001CHIPS by Analog Devices is a PHEMT technology RF amplifier with 12 dB gain, operating b/w 50-95 GHz. It has a max input power of 17 dBm and requires a 3.5V power supply. Ideal for wide band medium power applications in RF & Microwave systems, it offers reliable performance from -55 to 85°C.

50 ohm

COMPONENT

12 dB

17 dBm

1

95000 MHz

50000 MHz

85 Cel

-55 Cel

DIE OR CHIP

3.5

WIDE BAND MEDIUM POWER

350 mA

PHEMT

HMC8205BCHIPS by Analog Devices

HMC8205BCHIPS

Analog Devices

Analog Devices' HMC8205BCHIPS is a wide band high power RF amplifier with 24.5 dB gain, operating from 400 MHz to 6 GHz. It can handle up to 35 dBm CW input power and operates in temperatures ranging from -55°C to 85°C. Ideal for RF & microwave applications requiring high power amplification.

50 ohm

COMPONENT

24.5 dB

35 dBm

6000 MHz

400 MHz

85 Cel

-55 Cel

WIDE BAND HIGH POWER

ADPA7002CHIP by Analog Devices

ADPA7002CHIP

Analog Devices

ADPA7002CHIP by Analog Devices is a wide band medium power RF amplifier with 12 dB gain and 25 dBm max input power. Operating from 20-44 GHz, it is ideal for applications requiring high-frequency amplification in temperatures ranging from -55 to 85 °C.

50 ohm

COMPONENT

12 dB

25 dBm

44000 MHz

20000 MHz

85 Cel

-55 Cel

WIDE BAND MEDIUM POWER

ADPA7005CHIP by Analog Devices

ADPA7005CHIP

Analog Devices

ADPA7005CHIP by Analog Devices is a wide band medium power RF amplifier with 11.5 dB gain, operating from 20-44 GHz. It can handle up to 27 dBm CW input power and operates in temperatures ranging from -55 °C to 85°C. Ideal for applications requiring high frequency amplification in RF & microwave systems.

50 ohm

COMPONENT

11.5 dB

27 dBm

44000 MHz

20000 MHz

85 Cel

-55 Cel

WIDE BAND MEDIUM POWER

HMC1049SCPZ-EP-R7 by Analog Devices

HMC1049SCPZ-EP-R7

Analog Devices

Analog Devices' HMC1049SCPZ-EP-R7 is a wide band low power RF amplifier with 10 dB gain and 18 dBm CW input power. Operating from -55 °C to 105°C, it covers frequencies from 300 MHz to 20 GHz. Ideal for RF and microwave applications requiring high performance in a compact component package.

50 ohm

COMPONENT

10 dB

18 dBm

20000 MHz

300 MHz

105 Cel

-55 Cel

WIDE BAND LOW POWER

HMC1022A-SX by Analog Devices

HMC1022A-SX

Analog Devices

Analog Devices' HMC1022A-SX is a wide band low power RF amplifier with 11.5 dB gain and 22 dBm CW input power. Operating from -55 °C to 85°C, it covers frequencies from 0 MHz to 48 GHz. Ideal for RF and microwave applications requiring high performance in a compact component design.

50 ohm

COMPONENT

11.5 dB

22 dBm

48000 MHz

0 MHz

85 Cel

-55 Cel

WIDE BAND LOW POWER

HMC1022ACHIPS by Analog Devices

HMC1022ACHIPS

Analog Devices

Analog Devices' HMC1022ACHIPS is a wide band low power RF amplifier with 11.5 dB gain and 22 dBm CW input power. Operating from -55 °C to 85°C, it covers frequencies from 0 MHz to 48 GHz. Ideal for RF and microwave applications requiring high performance in a compact component package.

50 ohm

COMPONENT

11.5 dB

22 dBm

48000 MHz

0 MHz

85 Cel

-55 Cel

WIDE BAND LOW POWER

HMC863ALC4TR-R5 by Analog Devices

HMC863ALC4TR-R5

Analog Devices

Analog Devices' HMC863ALC4TR-R5 is a wide band medium power RF amplifier with 20.5 dB gain, operating from 24-29.5 GHz. It can handle up to 26 dBm CW input power and has a VSWR of 7. Ideal for RF & microwave applications requiring high performance in temperatures ranging from -40 to 85°C.

50 ohm

COMPONENT

20.5 dB

26 dBm

e4

29500 MHz

24000 MHz

85 Cel

-40 Cel

WIDE BAND MEDIUM POWER

Gold (Au) - with Nickel (Ni) barrier

7

HMC863ALC4TR by Analog Devices

HMC863ALC4TR

Analog Devices

Analog Devices' HMC863ALC4TR is a wide band medium power RF amplifier with 20.5 dB gain, operating b/w 24-29.5 GHz. It can handle up to 26 dBm CW input power and has a VSWR of 7, making it ideal for high-frequency applications in RF and microwave systems.

50 ohm

COMPONENT

20.5 dB

26 dBm

e4

29500 MHz

24000 MHz

85 Cel

-40 Cel

WIDE BAND MEDIUM POWER

Gold (Au) - with Nickel (Ni) barrier

7

ADL8111ACCZN by Analog Devices

ADL8111ACCZN

Analog Devices

ADL8111ACCZN by Analog Devices is a wide band low power RF amplifier with 10.6 dB gain, operating from 10 MHz to 8000 MHz. It can handle up to 20 dBm CW input power, making it suitable for various RF and microwave applications requiring high performance in temperatures ranging from -40°C to 85°C.

50 ohm

COMPONENT

10.6 dB

20 dBm

8000 MHz

10 MHz

85 Cel

-40 Cel

WIDE BAND LOW POWER

HMC8411TCPZ-EP-PT by Analog Devices

HMC8411TCPZ-EP-PT

Analog Devices

Analog Devices' HMC8411TCPZ-EP-PT is a wide band low power RF amplifier with 11 dB gain and 20 dBm CW input power. Operating from -55 to 125 °C, it covers frequencies from 10 MHz to 10 GHz. Ideal for RF and microwave applications requiring high performance in a compact component package.

50 ohm

COMPONENT

11 dB

20 dBm

10000 MHz

10 MHz

125 Cel

-55 Cel

WIDE BAND LOW POWER

ADPA7006CHIP by Analog Devices

ADPA7006CHIP

Analog Devices

ADPA7006CHIP by Analog Devices is a wide band medium power RF amplifier with 21 dB gain, operating from 18-44 GHz. It can handle up to 20 dBm CW input power and operates b/w -55°C to +85°C. Ideal for applications requiring high frequency amplification in RF & microwave systems.

50 ohm

COMPONENT

21 dB

20 dBm

44000 MHz

18000 MHz

85 Cel

-55 Cel

WIDE BAND MEDIUM POWER

HMC441LC3BTR-R5 by Analog Devices

HMC441LC3BTR-R5

Analog Devices

Analog Devices' HMC441LC3BTR-R5 is a wide band low power RF amplifier with 10 dB gain and 15 dBm max input power. Operating from 6-18 GHz, it's ideal for RF & microwave applications requiring high performance in temperatures ranging from -40 to 85°C.

50 ohm

COMPONENT

10 dB

15 dBm

e4

18000 MHz

6000 MHz

85 Cel

-40 Cel

WIDE BAND LOW POWER

GOLD OVER NICKEL

ADPA9002ACGZN-R7 by Analog Devices

ADPA9002ACGZN-R7

Analog Devices

ADPA9002ACGZN-R7 by Analog Devices is a wide band medium power RF amplifier with 13.5 dB gain, 25 dBm CW input power, and 50 ohm impedance. It operates from 0 to 10000 MHz, suitable for various RF & microwave applications requiring high performance amplification in temperatures ranging from -40 to 85 °C.

50 ohm

COMPONENT

13.5 dB

25 dBm

10000 MHz

0 MHz

85 Cel

-40 Cel

WIDE BAND MEDIUM POWER

7

ADPA9002ACGZN by Analog Devices

ADPA9002ACGZN

Analog Devices

ADPA9002ACGZN by Analog Devices is a wide band medium power RF amplifier with 13.5 dB gain, 25 dBm CW input power, and VSWR of 7. It operates from -40 to 85°C and covers frequencies from 0 to 10 GHz. Ideal for RF & microwave applications requiring high performance amplification in a compact form factor.

50 ohm

COMPONENT

13.5 dB

25 dBm

10000 MHz

0 MHz

85 Cel

-40 Cel

WIDE BAND MEDIUM POWER

7

ADPA7005AEHZ by Analog Devices

ADPA7005AEHZ

Analog Devices

ADPA7005AEHZ by Analog Devices is a wide band medium power RF amplifier with 12 dB gain. It operates b/w 18-44 GHz, handling up to 27 dBm CW input power. Ideal for applications requiring high frequency amplification in temperatures ranging from -40 to 85°C.

50 ohm

COMPONENT

12 dB

27 dBm

44000 MHz

18000 MHz

85 Cel

-40 Cel

WIDE BAND MEDIUM POWER

ADPA7002AEHZ by Analog Devices

ADPA7002AEHZ

Analog Devices

ADPA7002AEHZ by Analog Devices is a wide band medium power RF amplifier with 12 dB gain. It operates b/w 20-44 GHz, handling up to 25 dBm CW input power. Ideal for applications requiring high-frequency amplification in temperatures ranging from -55°C to 85°C.

50 ohm

COMPONENT

12 dB

25 dBm

44000 MHz

20000 MHz

85 Cel

-55 Cel

WIDE BAND MEDIUM POWER

ADCA3992AMLZ by Analog Devices

ADCA3992AMLZ

Analog Devices

ADCA3992AMLZ by Analog Devices is a wide band high power RF module with 26.7 dB gain, operating from 45 MHz to 1218 MHz. It has a characteristic impedance of 75 ohm and requires a power supply of 34 V with max current draw of 550 mA. Ideal for applications requiring high-power amplification in RF and microwave systems.

75 ohm

MODULE

26.7 dB

PANEL MOUNT

1

8

1218 MHz

45 MHz

85 Cel

-30 Cel

SOT-115J

34

WIDE BAND HIGH POWER

550 mA

HYBRID