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Analog Devices RF & Microwave Amplifiers 165

RF & Microwave Amplifiers
Part# Info Specs
Part RoHS Manufacturer Description Additional Features Characteristic Impedance Construction Gain Maximum Input Power (CW) JESD-609 Code Mounting Feature No. of Functions No. of Terminals Maximum Operating Frequency Minimum Operating Frequency Maximum Operating Temperature Minimum Operating Temperature Package Body Material Package Equivalence Code Power Supplies (V) RF or Microwave Device Type Screening Level Sub-Category Maximum Supply Current Maximum Supply Voltage Technology Terminal Finish Maximum Voltage Standing Wave Ratio
HMC634LC4TR-R5 by Analog Devices

HMC634LC4TR-R5

Analog Devices

Analog Devices' HMC634LC4TR-R5 is a GAAS RF amplifier with 24 terminals, operating at -40 to 85°C. It requires a 5V power supply and features a surface-mount package for applications in RF and microwave systems.

SURFACE MOUNT

1

24

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC24,.16SQ,20

5

RF/Microwave Amplifiers

GAAS

ADL5610ARKZ-R7 by Analog Devices

ADL5610ARKZ-R7

Analog Devices

ADL5610ARKZ-R7 by Analog Devices is a wide band medium power RF amplifier with a gain of 13.2 dB. It operates in the frequency range of 30 MHz to 6000 MHz and can handle a max input power of 20 dBm. This component is suitable for applications requiring RF amplification in the RF & Microwave field.

LOW NOISE

50 ohm

COMPONENT

13.2 dB

20 dBm

e3

6000 MHz

30 MHz

105 Cel

-40 Cel

WIDE BAND MEDIUM POWER

MATTE TIN

ADL5323ACPZ-R7 by Analog Devices

ADL5323ACPZ-R7

Analog Devices

ADL5323ACPZ-R7 by Analog Devices is a RF amplifier with 17.5 dB gain, operating from 1700 MHz to 2400 MHz. It has a max input power of 18 dBm and operates on a 5V power supply. This component is ideal for narrowband medium-power applications requiring surface mounting features.

TAPE AND REEL

50 ohm

COMPONENT

17.5 dB

18 dBm

e3

SURFACE MOUNT

1

8

2400 MHz

1700 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

SOLCC8,.11,20

5

NARROW BAND MEDIUM POWER

RF/Microwave Amplifiers

GAAS

Matte Tin (Sn)

ADL5320ARKZ-R7 by Analog Devices

ADL5320ARKZ-R7

Analog Devices

ADL5320ARKZ-R7 by Analog Devices is a GAAS RF amplifier with 11.5 dB gain, operating from 400 MHz to 2700 MHz. It has a max input power of 20 dBm and operates on a 5V power supply. Ideal for wideband medium-power applications in RF & microwave systems.

50 ohm

COMPONENT

11.5 dB

20 dBm

e3

SURFACE MOUNT

1

3

2700 MHz

400 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

TO-243

5

WIDE BAND MEDIUM POWER

RF/Microwave Amplifiers

GAAS

MATTE TIN

ADL5570ACPZ-R7 by Analog Devices

ADL5570ACPZ-R7

Analog Devices

ADL5570ACPZ-R7 by Analog Devices is a GAAS technology RF amplifier with 29 dB gain, operating b/w 2300-2400 MHz. It has a VSWR of 10 and operates on a 3.5V power supply. This wideband low-power device is ideal for RF and microwave applications requiring surface mounting in temperatures ranging from -40 to 85 °C.

50 ohm

COMPONENT

29 dB

e3

SURFACE MOUNT

1

16

2400 MHz

2300 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC16,.16SQ,25

3.5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

GAAS

Matte Tin (Sn)

10

ADL5534ACPZ-R7 by Analog Devices

ADL5534ACPZ-R7

Analog Devices

ADL5534ACPZ-R7 by Analog Devices is a wide band medium power RF amplifier with 18.8 dB gain, operating from 20 MHz to 500 MHz. It can handle up to 12 dBm CW input power and operates b/w -40°C to 85°C. Ideal for RF and microwave applications requiring high gain and broad frequency coverage.

50 ohm

COMPONENT

18.8 dB

12 dBm

e3

500 MHz

20 MHz

85 Cel

-40 Cel

WIDE BAND MEDIUM POWER

MATTE TIN

AD8350ARMZ20 by Analog Devices

AD8350ARMZ20

Analog Devices

AD8350ARMZ20 by Analog Devices is a wide band medium power RF amplifier with 19 dB gain and 1000 MHz max operating frequency. It can handle up to 8 dBm CW input power, making it ideal for RF applications requiring high performance in the -40 to 85°C temperature range.

200 ohm

COMPONENT

19 dB

8 dBm

e3

1000 MHz

85 Cel

-40 Cel

WIDE BAND MEDIUM POWER

MATTE TIN

AD8353ACP-R2 by Analog Devices

AD8353ACP-R2

Analog Devices

AD8353ACP-R2 by Analog Devices is a wide band low power RF amplifier with 15.6 dB gain, operating from 1 MHz to 2700 MHz. It has a max input power of 10 dBm and operates on a 5V supply, making it suitable for various RF and microwave applications. The component is housed in a plastic/epoxy package with surface mounting feature.

50 ohm

COMPONENT

15.6 dB

10 dBm

e0

SURFACE MOUNT

1

8

2700 MHz

1 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

SOLCC8,.08,20

5

WIDE BAND LOW POWER

RF/Microwave Amplifiers

52 mA

Tin/Lead (Sn85Pb15)

AD8350ARZ15-REEL7 by Analog Devices

AD8350ARZ15-REEL7

Analog Devices

AD8350ARZ15-REEL7 by Analog Devices is a wide band medium power RF amplifier with 14 dB gain and 1000 MHz max operating frequency. It can handle up to 8 dBm CW input power, making it suitable for various RF and microwave applications requiring high performance in temperatures ranging from -40°C to 85°C.

200 ohm

COMPONENT

14 dB

8 dBm

e3

1000 MHz

85 Cel

-40 Cel

WIDE BAND MEDIUM POWER

MATTE TIN

AD8350ARMZ20-REEL7 by Analog Devices

AD8350ARMZ20-REEL7

Analog Devices

AD8350ARMZ20-REEL7 by Analog Devices is a RF amplifier with 19 dB gain, 1000 MHz max frequency, and 8 dBm CW input power. It operates b/w -40 to 85 °C and has a characteristic impedance of 200 ohm. Ideal for wideband medium power applications in RF & microwave systems.

200 ohm

COMPONENT

19 dB

8 dBm

e3

1000 MHz

85 Cel

-40 Cel

WIDE BAND MEDIUM POWER

MATTE TIN

HMC1040CHIPS-SX by Analog Devices

HMC1040CHIPS-SX

Analog Devices

HMC1040CHIPS-SX by Analog Devices is a wide band low power RF amplifier with a gain of 19 dB. It operates in a frequency range of 20-44 GHz and can handle max input power of 5 dBm. This component is suitable for applications requiring RF amplification in the microwave frequency range.

50 ohm

COMPONENT

19 dB

5 dBm

44000 MHz

20000 MHz

85 Cel

-55 Cel

WIDE BAND LOW POWER

ADMV7710-SX by Analog Devices

ADMV7710-SX

Analog Devices

Analog Devices' ADMV7710-SX is a wide band medium power RF amplifier with 21 dB gain, operating from 71-76 GHz. Ideal for applications requiring high-frequency amplification in temperatures ranging from -55 to 85 °C.

50 ohm

COMPONENT

21 dB

76000 MHz

71000 MHz

85 Cel

-55 Cel

WIDE BAND MEDIUM POWER

HMC1114PM5ETR by Analog Devices

HMC1114PM5ETR

Analog Devices

Analog Devices' HMC1114PM5ETR is a GaN wide band high power RF amplifier with 31 dB gain, operating from 2.7 GHz to 3.8 GHz. It has a max input power of 18 dBm and VSWR of 6, suitable for applications requiring high power amplification in the RF & Microwave field. The component features a surface mount package body material made of plastic/epoxy, with a max supply current of 150 mA at 28V.

50 ohm

COMPONENT

31 dB

18 dBm

e4

SURFACE MOUNT

1

32

3800 MHz

2700 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC32,.2SQ,20

28

WIDE BAND HIGH POWER

150 mA

GAN

NICKEL PALLADIUM GOLD

6

ADPA7001CHIPS-SX by Analog Devices

ADPA7001CHIPS-SX

Analog Devices

ADPA7001CHIPS-SX by Analog Devices is a RF amplifier with 12 dB gain, operating frequency range of 50-95 GHz, and max input power of 17 dBm. It is ideal for wide band medium power applications requiring a characteristic impedance of 50 ohm. With PHEMT technology and low supply current of 350 mA at 3.5 V, it can operate in temperatures ranging from -55 to 85°C.

50 ohm

COMPONENT

12 dB

17 dBm

1

95000 MHz

50000 MHz

85 Cel

-55 Cel

DIE OR CHIP

3.5

WIDE BAND MEDIUM POWER

350 mA

PHEMT

ADL8111ACCZN-R7 by Analog Devices

ADL8111ACCZN-R7

Analog Devices

ADL8111ACCZN-R7 by Analog Devices is a wide band low power RF amplifier with 10.6 dB gain, operating from 10 MHz to 8000 MHz. It can handle up to 20 dBm CW input power and operates b/w -40 °C to 85°C. Ideal for RF & microwave applications requiring high frequency amplification in a compact component design.

50 ohm

COMPONENT

10.6 dB

20 dBm

8000 MHz

10 MHz

85 Cel

-40 Cel

WIDE BAND LOW POWER

ADPA7002C-KIT by Analog Devices

ADPA7002C-KIT

Analog Devices

ADPA7002C-KIT by Analog Devices is a GAAS technology RF amplifier with 12 dB gain, operating from 20-44 GHz. It has a max input power of 25 dBm and operates b/w -55 to 85°C. Ideal for wideband medium-power applications requiring surface mount construction.

50 ohm

COMPONENT

12 dB

25 dBm

SURFACE MOUNT

1

22

44000 MHz

20000 MHz

85 Cel

-55 Cel

DIE OR CHIP

5

WIDE BAND MEDIUM POWER

GAAS

HMC8411TCPZ-EP-R7 by Analog Devices

HMC8411TCPZ-EP-R7

Analog Devices

Analog Devices' HMC8411TCPZ-EP-R7 is a wide band low power RF amplifier with 11 dB gain and 20 dBm CW input power. Operating from 10 MHz to 10 GHz, it's ideal for RF & microwave applications requiring high performance in extreme temperatures (-55 °C to 125°C).

50 ohm

COMPONENT

11 dB

20 dBm

10000 MHz

10 MHz

125 Cel

-55 Cel

WIDE BAND LOW POWER

ADPA7005AEHZ-R7 by Analog Devices

ADPA7005AEHZ-R7

Analog Devices

ADPA7005AEHZ-R7 by Analog Devices is a wide band medium power RF amplifier with 12 dB gain, operating from 18-44 GHz. It can handle up to 27 dBm CW input power and operates in temperatures ranging from -40 °C to 85°C. Ideal for applications requiring high frequency amplification in RF & microwave systems.

50 ohm

COMPONENT

12 dB

27 dBm

44000 MHz

18000 MHz

85 Cel

-40 Cel

WIDE BAND MEDIUM POWER

ADPA7002AEHZ-R7 by Analog Devices

ADPA7002AEHZ-R7

Analog Devices

ADPA7002AEHZ-R7 by Analog Devices is a ceramic-packaged RF amplifier with 25 dBm CW input power, 13.5 dB gain, and wideband medium power technology. It operates b/w -40 °C to 85°C, suitable for applications requiring surface mounting in the frequency range of 18-44 GHz.

50 ohm

COMPONENT

13.5 dB

25 dBm

SURFACE MOUNT

1

16

44000 MHz

18000 MHz

85 Cel

-40 Cel

CERAMIC

5

WIDE BAND MEDIUM POWER

GAAS

HMC716ALP3ETR by Analog Devices

HMC716ALP3ETR

Analog Devices

HMC716ALP3ETR by Analog Devices is a RF amplifier with 15.5 dB gain, operating frequency range of 3100-3900 MHz, and 50 ohm impedance. It has a max input power of 10 dBm and VSWR of 1.38, suitable for narrow band low power applications in the RF & Microwave field. The component is constructed using GaAs technology and can operate b/w -40 to 85 °C temperature range.

50 ohm

COMPONENT

15.5 dB

10 dBm

SURFACE MOUNT

1

16

3900 MHz

3100 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC16,.12SQ,20

3,5

NARROW BAND LOW POWER

90 mA

GAAS

1.38

HMC8412LP2FETR by Analog Devices

HMC8412LP2FETR

Analog Devices

HMC8412LP2FETR by Analog Devices is a wide band low power RF amplifier with 12 dB gain, operating from 400 MHz to 11 GHz. It has a max input power of 25 dBm and VSWR of 1.375, suitable for applications requiring high frequency amplification in RF & microwave systems. With a compact surface mount construction and operating temperatures from -40°C to 85°C, it offers reliable performance in various environments.

50 ohm

COMPONENT

12 dB

25 dBm

e4

SURFACE MOUNT

1

6

11000 MHz

400 MHz

85 Cel

-40 Cel

SOLCC6,.08,25

5

WIDE BAND LOW POWER

NICKEL PALLADIUM GOLD

1.375

HMC8412LP2FE by Analog Devices

HMC8412LP2FE

Analog Devices

Analog Devices' HMC8412LP2FE is a wide band low power RF amplifier with 12 dB gain, operating from 400 MHz to 11 GHz. It has a max input power of 25 dBm and VSWR of 1.375, suitable for surface mount applications in RF & microwave systems.

50 ohm

COMPONENT

12 dB

25 dBm

e4

SURFACE MOUNT

1

6

11000 MHz

400 MHz

85 Cel

-40 Cel

SOLCC6,.08,25

5

WIDE BAND LOW POWER

NICKEL PALLADIUM GOLD

1.375

ADPA7004CHIP-SX by Analog Devices

ADPA7004CHIP-SX

Analog Devices

ADPA7004CHIP-SX by Analog Devices is a PHEMT technology RF amplifier with 13dB gain, operating from 40-80GHz. It has a max input power of 18dBm and VSWR of 1.15, suitable for wideband medium-power applications in RF & microwave systems.

50 ohm

COMPONENT

13 dB

18 dBm

SURFACE MOUNT

1

16

80000 MHz

40000 MHz

85 Cel

-55 Cel

DIE OR CHIP

-0.4,3.5

WIDE BAND MEDIUM POWER

PHEMT

1.15

ADPA7009CHIP by Analog Devices

ADPA7009CHIP

Analog Devices

ADPA7009CHIP by Analog Devices is a PHEMT technology RF amplifier with 20 dBm CW input power, 1.17 VSWR, and 17.5 dB gain. It operates b/w -55 °C to 85°C, covering frequencies from 20 GHz to 54 GHz. Ideal for wideband medium-power applications requiring surface mounting feature.

50 ohm

COMPONENT

17.5 dB

20 dBm

SURFACE MOUNT

1

10

54000 MHz

20000 MHz

85 Cel

-55 Cel

DIE OR CHIP

5

WIDE BAND MEDIUM POWER

PHEMT

1.17

ADL8121ACPZN by Analog Devices

ADL8121ACPZN

Analog Devices

ADL8121ACPZN by Analog Devices is a PHEMT RF amplifier with 15dB gain, 32dBm CW input power, and 1.43 VSWR. Ideal for wideband low-power applications in the RF & microwave field, it operates from -40°C to 85°C with a frequency range of 25MHz to 12GHz.

50 ohm

COMPONENT

15 dB

32 dBm

SURFACE MOUNT

1

6

12000 MHz

25 MHz

85 Cel

-40 Cel

SOLCC6,.08,25

5

WIDE BAND LOW POWER

PHEMT

1.43

ADL8121ACPZN-R7 by Analog Devices

ADL8121ACPZN-R7

Analog Devices

ADL8121ACPZN-R7 by Analog Devices is a PHEMT RF amplifier with 15dB gain, 32dBm CW input power, and 1.43 VSWR. Ideal for wideband low-power applications from 25MHz to 12GHz, it operates b/w -40°C to +85°C with a characteristic impedance of 50Ω. Suitable for surface mount installations with a 5V power supply requirement.

50 ohm

COMPONENT

15 dB

32 dBm

SURFACE MOUNT

1

6

12000 MHz

25 MHz

85 Cel

-40 Cel

SOLCC6,.08,25

5

WIDE BAND LOW POWER

PHEMT

1.43

ADL8142ACPZN by Analog Devices

ADL8142ACPZN

Analog Devices

ADL8142ACPZN by Analog Devices is a PHEMT RF amplifier with 24.5 dB gain, operating b/w 23-31 GHz. It has a max input power of 20 dBm and VSWR of 1.38, suitable for wideband low-power applications in RF & microwave systems. With surface mounting feature, it operates from -40 to 85°C with a characteristic impedance of 50 ohms.

50 ohm

COMPONENT

24.5 dB

20 dBm

SURFACE MOUNT

1

8

31000 MHz

23000 MHz

85 Cel

-40 Cel

SOLCC8,.08,20

2

WIDE BAND LOW POWER

PHEMT

1.38

ADL8142ACPZN-R7 by Analog Devices

ADL8142ACPZN-R7

Analog Devices

ADL8142ACPZN-R7 by Analog Devices is a PHEMT RF amplifier with 24.5 dB gain, operating b/w 23-31 GHz. It has a max input power of 20 dBm and VSWR of 1.38, suitable for wideband low-power applications in RF & microwave systems. With surface mounting feature, it operates from -40 to 85°C with a supply voltage of 2V.

50 ohm

COMPONENT

24.5 dB

20 dBm

SURFACE MOUNT

1

8

31000 MHz

23000 MHz

85 Cel

-40 Cel

SOLCC8,.08,20

2

WIDE BAND LOW POWER

PHEMT

1.38

ADPA1106ACGZN by Analog Devices

ADPA1106ACGZN

Analog Devices

ADPA1106ACGZN by Analog Devices is a GAN technology RF amplifier with 33.5 dB gain, operating from 2700 MHz to 3500 MHz. It has a max input power of 30 dBm and VSWR of 2.1, suitable for wideband medium-power applications in RF & microwave systems.

50 ohm

COMPONENT

33.5 dB

30 dBm

SURFACE MOUNT

1

32

3500 MHz

2700 MHz

85 Cel

-40 Cel

LCC32,.2SQ,20

50

WIDE BAND MEDIUM POWER

GAN

2.1

ADPA1106ACGZN-R7 by Analog Devices

ADPA1106ACGZN-R7

Analog Devices

ADPA1106ACGZN-R7 by Analog Devices is a GAN technology RF amplifier with 33.5 dB gain, operating b/w 2700-3500 MHz. It has a max input power of 30 dBm and VSWR of 2.1, suitable for wideband medium-power applications in RF & microwave systems.

50 ohm

COMPONENT

33.5 dB

30 dBm

SURFACE MOUNT

1

32

3500 MHz

2700 MHz

85 Cel

-40 Cel

LCC32,.2SQ,20

50

WIDE BAND MEDIUM POWER

GAN

2.1

HMC1126 by Analog Devices

HMC1126

Analog Devices

Analog Devices' HMC1126 is a wide band low power RF amplifier with 8 dB gain and 22 dBm CW input power. Operating from -55 °C to 85°C, it covers frequencies from 2 GHz to 50 GHz. Ideal for RF & microwave applications requiring high performance in a compact component package.

50 ohm

COMPONENT

8 dB

22 dBm

50000 MHz

2000 MHz

85 Cel

-55 Cel

WIDE BAND LOW POWER

HMC1127 by Analog Devices

HMC1127

Analog Devices

Analog Devices' HMC1127 is a wide band low power RF amplifier with 11.5 dB gain and 22 dBm max input power. Operating from 2-50 GHz, it's ideal for RF & microwave applications requiring high performance in temperatures ranging from -55 to 85 °C.

50 ohm

COMPONENT

11.5 dB

22 dBm

50000 MHz

2000 MHz

85 Cel

-55 Cel

WIDE BAND LOW POWER

HMC1131LC4TR by Analog Devices

HMC1131LC4TR

Analog Devices

HMC1131LC4TR by Analog Devices is a wide band low power RF amplifier with 22 dB gain, operating from 24 to 35 GHz. It has a max input power of 12 dBm and operates on a 5V power supply. This ceramic-packaged component is ideal for RF and microwave applications requiring high frequency amplification in the -40 to +85°C temperature range.

50 ohm

COMPONENT

22 dB

12 dBm

e4

SURFACE MOUNT

1

24

35000 MHz

24000 MHz

85 Cel

-40 Cel

CERAMIC

LCC24,.16SQ,20

5

WIDE BAND LOW POWER

GAAS

GOLD NICKEL

HMC1131LC4 by Analog Devices

HMC1131LC4

Analog Devices

HMC1131LC4 by Analog Devices is a wide band low power RF amplifier with 22 dB gain. It operates from 24 to 35 GHz, handling up to 12 dBm CW input power. This ceramic-packaged component is ideal for RF and microwave applications requiring high performance in a compact form factor.

50 ohm

COMPONENT

22 dB

12 dBm

e4

SURFACE MOUNT

1

24

35000 MHz

24000 MHz

85 Cel

-40 Cel

CERAMIC

LCC24,.16SQ,20

5

WIDE BAND LOW POWER

GAAS

GOLD NICKEL

HMC1144 by Analog Devices

HMC1144

Analog Devices

Analog Devices' HMC1144 is a wide band low power RF amplifier with 17 dB gain, operating from 35-70 GHz. It can handle up to 22 dBm CW input power and operates b/w -55°C to +85°C. Ideal for RF & microwave applications requiring high frequency amplification in a compact component design.

50 ohm

COMPONENT

17 dB

22 dBm

70000 MHz

35000 MHz

85 Cel

-55 Cel

WIDE BAND LOW POWER

HMC1114LP5DE by Analog Devices

HMC1114LP5DE

Analog Devices

HMC1114LP5DE by Analog Devices is a GAN technology RF amplifier with 29 dB gain, operating from 2700 MHz to 3800 MHz. It has a max input power of 30 dBm and operates at temperatures ranging from -40 °C to 85°C. Ideal for wideband high-power applications requiring a component construction with surface mounting feature.

50 ohm

COMPONENT

29 dB

30 dBm

SURFACE MOUNT

1

32

3800 MHz

2700 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC32,.2SQ,20

28

WIDE BAND HIGH POWER

150 mA

GAN

HMC930A by Analog Devices

HMC930A

Analog Devices

Analog Devices' HMC930A is a wide band medium power RF amplifier with 10 dB gain and 22 dBm max input power. With a VSWR of 7, it operates from -55°C to 85°C, making it suitable for various RF and microwave applications up to 40 GHz.

50 ohm

COMPONENT

10 dB

22 dBm

40000 MHz

0 MHz

85 Cel

-55 Cel

WIDE BAND MEDIUM POWER

7

HMC1087F10 by Analog Devices

HMC1087F10

Analog Devices

HMC1087F10 by Analog Devices is a GAN technology RF amplifier with 11dB gain, operating from 2-20GHz. It has a max input power of 34dBm and VSWR of 6, suitable for wideband high-power applications in RF & microwave systems. The ceramic package, surface mountable device operates b/w -40 to +85°C with a 28V supply.

50 ohm

COMPONENT

11 dB

34 dBm

SURFACE MOUNT

1

10

20000 MHz

2000 MHz

85 Cel

-40 Cel

CERAMIC

28

WIDE BAND HIGH POWER

GAN

6

HMC1099LP5DETR by Analog Devices

HMC1099LP5DETR

Analog Devices

HMC1099LP5DETR by Analog Devices is a GAN technology RF amplifier with 16.5 dB gain, operating from 10 MHz to 1100 MHz. It has a max input power of 33 dBm and VSWR of 6, suitable for wideband high-power applications in RF and microwave systems. The component is housed in a plastic/epoxy package with 32 terminals, designed for surface mount installation at temperatures ranging from -40 °C to 85°C.

50 ohm

COMPONENT

16.5 dB

33 dBm

SURFACE MOUNT

1

32

1100 MHz

10 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC32,.2SQ,20

28

WIDE BAND HIGH POWER

100 mA

GAN

6

HMC-AUH312-SX by Analog Devices

HMC-AUH312-SX

Analog Devices

Analog Devices' HMC-AUH312-SX is a wide band low power RF amplifier with 8 dB gain and 10 dBm CW input power. Operating from 500 MHz to 80 GHz, it's ideal for RF & microwave applications requiring high performance in temperatures ranging from -55°C to 85°C.

50 ohm

COMPONENT

8 dB

10 dBm

80000 MHz

500 MHz

85 Cel

-55 Cel

WIDE BAND LOW POWER

HMC637A by Analog Devices

HMC637A

Analog Devices

Analog Devices' HMC637A is a wide band medium power RF amplifier with 11 dB gain and 25 dBm max input power. Operating from -55 °C to 85°C, it covers frequencies from 0 MHz to 6 GHz. Ideal for RF & microwave applications requiring high performance in a compact component package.

50 ohm

COMPONENT

11 dB

25 dBm

6000 MHz

0 MHz

85 Cel

-55 Cel

WIDE BAND MEDIUM POWER

HMC5805ALS6 by Analog Devices

HMC5805ALS6

Analog Devices

Analog Devices' HMC5805ALS6 is a wide band low power RF amplifier with 9 dB gain and 50 ohm impedance. It operates from 0 to 40 GHz, handling up to 22 dBm CW input power. Ideal for applications requiring high frequency amplification in extreme temperature environments.

50 ohm

COMPONENT

9 dB

22 dBm

e4

40000 MHz

0 MHz

85 Cel

-40 Cel

WIDE BAND LOW POWER

GOLD OVER NICKEL

HMC8400 by Analog Devices

HMC8400

Analog Devices

Analog Devices' HMC8400 is a wide band low power RF amplifier with 11.5 dB gain, handling up to 23 dBm CW input power. Operating from -55 °C to 85°C, it covers frequencies from 2 GHz to 30 GHz. Ideal for RF and microwave applications requiring high performance in a compact component design.

50 ohm

COMPONENT

11.5 dB

23 dBm

30000 MHz

2000 MHz

85 Cel

-55 Cel

WIDE BAND LOW POWER

HMC7748 by Analog Devices

HMC7748

Analog Devices

Analog Devices' HMC7748 is a wide band high power RF amplifier with 58 dB gain, operating from 2-6 GHz. It has a max input power of 8 dBm and VSWR of 6, suitable for applications requiring high power amplification in RF & microwave systems. The component is constructed with plastic/epoxy package body material and can be surface mounted, making it versatile for various temperature environments.

50 ohm

COMPONENT

58 dB

8 dBm

SURFACE MOUNT

1

6

6000 MHz

2000 MHz

70 Cel

-40 Cel

PLASTIC/EPOXY

MODULE,6LEAD,2.9

12,28

WIDE BAND HIGH POWER

4000 mA

6

HMC8120-SX by Analog Devices

HMC8120-SX

Analog Devices

HMC8120-SX by Analog Devices is a wide band low power RF amplifier with 19 dB gain. Operating frequency range from 71-76 GHz, ideal for high-frequency applications. Features PHEMT technology, 50 ohm impedance, and surface mounting for easy integration.

50 ohm

COMPONENT

19 dB

SURFACE MOUNT

1

28

76000 MHz

71000 MHz

85 Cel

-55 Cel

4

WIDE BAND LOW POWER

250 mA

PHEMT

HMC8120 by Analog Devices

HMC8120

Analog Devices

HMC8120 by Analog Devices is a PHEMT RF amplifier with 19 dB gain, operating b/w 71-76 GHz. It features 28 terminals, 50 ohm impedance, and consumes up to 250 mA at 4 V. Ideal for wideband low-power applications in RF and microwave systems.

50 ohm

COMPONENT

19 dB

SURFACE MOUNT

1

28

76000 MHz

71000 MHz

85 Cel

-55 Cel

4

WIDE BAND LOW POWER

250 mA

PHEMT

HMC-C582 by Analog Devices

HMC-C582

Analog Devices

HMC-C582 by Analog Devices is a PHEMT RF amplifier with 16 dB gain, operating from 10 MHz to 20 GHz. It has a max input power of 23 dBm and requires a 15V power supply. Ideal for wideband low-power applications in RF and microwave systems.

50 ohm

COMPONENT

16 dB

23 dBm

1

4

20000 MHz

10 MHz

75 Cel

-40 Cel

MODULE,4LEAD(UNSPEC)

15

WIDE BAND LOW POWER

900 mA

PHEMT

HMC716ALP3E by Analog Devices

HMC716ALP3E

Analog Devices

HMC716ALP3E by Analog Devices is a RF amplifier with 15.5 dB gain, operating frequency range of 3100-3900 MHz, and 10 dBm CW input power. It is ideal for narrow band low power applications requiring a max VSWR of 1.38 in plastic/epoxy package construction.

50 ohm

COMPONENT

15.5 dB

10 dBm

SURFACE MOUNT

1

16

3900 MHz

3100 MHz

85 Cel

-40 Cel

PLASTIC/EPOXY

LCC16,.12SQ,20

3,5

NARROW BAND LOW POWER

90 mA

GAAS

1.38